Re: photo resist pretreatment before ion implantation

Hi SangBum,

Just wanted to clarify one point here:

The second 30min 110 C bake is not needed if you send your wafers for implant right away. It is intended for wafers that sit around for a long while (this is the case for ee410, sometimes the wafers wait in the lab for 2-3 days before the implant step). The reason is that if you leave your wafers waiting around for a long time the resist layer tends to absorb moisture from the ambient and this reverses the effect of baking.

Hope this saves you some time,

Caner.

On Apr 23, 2008, at 9:12 PM, SangBum Kim wrote:

Thank you for those who sent me the reply. I found a recipe from ee410 class runsheet, which you can find at http://www.stanford.edu/class/ee410/#HO thanks to Mary's help.

0) After developing 1um thick 3612,
1) 30mins at 110C
2) 15mins UV exposure
3) 30mins at 110C
4) Ion implantation

SangBum


SangBum Kim wrote:

Dear SNF labmembers,

 

 Could anyone give me some advice on typical photoresist pretreatment before ion implantation, please?

 For example, do I need 1) UV hardening of resist or 2) heat treatment? Any other suggestions?

 

 I plan to use ion implantation service from Innovion and use 1.6um thick SPR 3612 as a photoresist with maximum As ion energy of 180keV.

 

Thanks,

SangBum