All lighting circuits in the lab have been successfully restored without
causing any additional power outages. The lab should be fully
functional and you should be able to resume full process activity
without fear of another building-wide power failure.
Thank you for your continued support,
John
As a number of you know, last evening we experienced an electrical
outage that caused a loss of power to about half of the building. It is
my understanding that his has been traced to a ground current fault that
was detected by one of the two main circuit breakers in the building.
FacOps and the campus electrical shop have restored as much of the power
as they can and now believe that the failure was likely caused by one of
six lighting circuits. Those six lighting circuits are still off and
will not likely be restored until tomorrow morning.
Tomorrow morning at 7 a.m., the electrical shop will restore power to
each of the six lighting circuits one at a time to see if they can
identify the troublesome circuit. This means that there is the very
real chance that this experiment will trip the same main breaker once
again. While we hope that will not happen, we will at least know for
certain which of the lighting circuits is at fault.
Because of the risk that power may go off again tomorrow morning, it is
my recommendation that folks planning to use the lab or other sensitive
equipment plan around this time period. Specifically, I recommend that
you not be using equipment between about 7 a.m. and 8 a.m. tomorrow
morning for fear that your run may be interrupted and equipment may
shutdown in an unplanned fashion.
We apologize for this inconvenience and hope that we will be able to
find the faulty circuit and resolve this issue so that it does not cause
further interruptions.
Thank you for your continued support,
John
Dear Labmembers:
Just in case you have time and you are interested in flow batteries – please see below – you are more than welcome to join the talk.
Best regards,
Rainer Fasching
Where: HP teaching center Room 101
When: Tuesday form 10am-11am.
From: Rainer Fasching [mailto:rfasch@stanford.edu]
Sent: Wednesday, July 28, 2010 9:57 PM
To: Su10-ME-420-01
Subject: Guest lectrure - Dr. Craig Horn - flow batteries for grid storage
An announcement has been added in the "Su10-ME-420-01 Applied Electrochemistry at Micro- and Nanoscale with focuse on batterie systems" site at Coursework 5 (https://coursework.stanford.edu/portal/site/Su10-ME-420-01)
Subject: Guest lectrure - Dr. Craig Horn - flow batteries for grid storage
From: Rainer Fasching
Date: Jul 28, 2010 9:56 pm
Message:
All:
As mentioned in class Craig Horn will give a guest lecture about flow batteries tomorrow in. He is the cofounder and CEO of EnerVault, a company that devlopes energy storage solution for grid stabilization. I look forward to his talk.
Below for your informaton his BIO.
Dr Horn is start-up veteran in areas of renewable energy, fuel cells, batteries, telecom, and nanotechnology. He has more than 20 years of experience working with renewable energy technologies overlapping with 9 years in nanotechnology. Majority of his career he spent in ground-level projects (synchrotron radiation spectroscopy of Li-ion materials, nanoscale material based Li-ion components, nanoscale material deposition of active glass films for telecom components, disruptive manufacturing of fuel cell stacks) resulting in 15 US patents awarded, over 14 US applications pending, and numerous international patents. Lectured on energy storage and flow battery technologies at Stanford, UC Berkeley, national laboratories, and utilities.
See you tomorrow in class,
Rainer Fasching
This automatic notification message was sent by Coursework 5 (https://coursework.stanford.edu/portal) from the Su10-ME-420-01 site.
You can modify how you receive notifications at My Workspace > Preferences.
Dear Labmembers:
Just in case you have time and you are interested in flow batteries – please see below – you are more than welcome to join the talk.
Best regards,
Rainer Fasching
Where: HP teaching center Room 101
When: Tuesday form 10am-11am.
From: Rainer Fasching [mailto:rfasch@stanford.edu]
Sent: Wednesday, July 28, 2010 9:57 PM
To: Su10-ME-420-01
Subject: Guest lectrure - Dr. Craig Horn - flow batteries for grid storage
An announcement has been added in the "Su10-ME-420-01 Applied Electrochemistry at Micro- and Nanoscale with focuse on batterie systems" site at Coursework 5 (https://coursework.stanford.edu/portal/site/Su10-ME-420-01)
Subject: Guest lectrure - Dr. Craig Horn - flow batteries for grid storage
From: Rainer Fasching
Date: Jul 28, 2010 9:56 pm
Message:
All:
As mentioned in class Craig Horn will give a guest lecture about flow batteries tomorrow in. He is the cofounder and CEO of EnerVault, a company that devlopes energy storage solution for grid stabilization. I look forward to his talk.
Below for your informaton his BIO.
Dr Horn is start-up veteran in areas of renewable energy, fuel cells, batteries, telecom, and nanotechnology. He has more than 20 years of experience working with renewable energy technologies overlapping with 9 years in nanotechnology. Majority of his career he spent in ground-level projects (synchrotron radiation spectroscopy of Li-ion materials, nanoscale material based Li-ion components, nanoscale material deposition of active glass films for telecom components, disruptive manufacturing of fuel cell stacks) resulting in 15 US patents awarded, over 14 US applications pending, and numerous international patents. Lectured on energy storage and flow battery technologies at Stanford, UC Berkeley, national laboratories, and utilities.
See you tomorrow in class,
Rainer Fasching
This automatic notification message was sent by Coursework 5 (https://coursework.stanford.edu/portal) from the Su10-ME-420-01 site.
You can modify how you receive notifications at My Workspace > Preferences.
As you likely know, this building is in the process of getting it's roof
painted. Particularly when they are painting the west side (above the
loading dock) which is very close to the air intakes, there is a chance
that odors from that activity will enter the lab.
The folks from facilities and the contractor have provided us both with
a detailed schedule of the job and with the MSDS sheets for the paint
they are using. I have attached those documents. It appears as if this
Thursday and next Monday and Tuesday will be the days when painting will
be happening on the west side of the building.
Based on the MSDS sheets, the materials that are being used are water
based and noticeably less toxic than a number of products. That said,
they do have a small component (0.1% by weight) of aqueous ammonia and
the color component also contains nearly 2% by weight of ethylene glycol
(anti-freeze in your car is approximately 50% ethylene glycol).
There may be some of these odors in the lab and we will be doing out
best to be aware of how strong the odor is. However, if you find these
odors irritating or if you find that you develop either a headache or
nausea let a staff member know and get out of the lab into nice fresh air.
Thank your for your consideration,
John
"Magnetic Sifter and Nanoparticles for Cell and Protein Separation"
PhD Candidate: Chris Earhart
Department of Materials Science and Engineering
Advisor: Professor Shan X. Wang
Date: Wednesday, July 28, 2010
Time: 9:30 am (refreshments at 9:15 am)
Place: CIS-X Auditorium (Rm 101)
Abstract:
Nanoscience and nanotechnology have been applied in recent years to
cancer research, with the goal of making a revolutionary change in the
ways in which cancer is diagnosed and treated. Magnetic
nanotechnologies, in particular, have shown significant potential in
several areas such as imaging, therapeutics, and early detection. The
topic of this presentation is a novel magnetic separation device, the
magnetic sifter, and physically fabricated magnetic nanoparticles for
applications in cell and protein separation.
The magnetic sifter is a microfabricated planar die containing a dense
array of pores (~200-5000/mm2) in a magnetically soft membrane. When
magnetized by an external field, the sifter pores generate large
magnetic field gradients near the pore edges, which capture nanoscale
magnetic carriers during flow with high efficiency and throughput.
The magnetic sifter is a microfluidic device, in the sense that it
contains microfabricated, micron-scale pores for fluid flow. It is
also a macrofluidic device, in that high-volume throughput is achieved
by parallel flow through the large number of pores.
When paired with magnetic carriers functionalized with recognition
moieties, the magnetic sifter can be used in both cell and protein
enrichment schemes. Separations of magnetically labeled tumor cells
and individual magnetic nanoparticles using the sifter will be
discussed. With its planar structure and presentation of captured
cells, the sifter can also be used as a cell imaging platform. The
use of the sifter to capture and quantify low concentrations (~100/mL)
of tumor cells in whole blood samples has been demonstrated.
Lastly, a method for high-throughput fabrication of novel magnetic
carriers, synthetic antiferromagnetic (SAF) nanoparticles, will be
presented. The method has enabled production of large quantities of
SAF nanoparticles, which have desirable properties for applications in
magnetic separation. The capture and release of SAF nanoparticles
with the magnetic sifter has been shown. High capture efficiencies
are achieved at flow rates 10-20x higher than what was previously
possible with commercially available magnetic carriers.
Dear Lab Members,
Due to Vacation schedules the Process Clinic that was scheduled for today at 2:00P has been cancelled. It will be back on schedule, August 9th at 2:00P.
Maureen
Maureen Baran
Stanford Nanofabrication Facility
Lab Services Administrator
mbaran@stanford.edu
650-725-3664
There was a fire alarm at 2 am this morning which shut down most gases
to the lab. The alarm was determined to be a detector malfunction in
one of the Extension labs, so everything is OK. The alarm shut off most
process gases to the lab. These, with the exception of dopant gases
containing PH3, AsH3, or B2H6, have been turned back on. Maintenance
staff will be here shortly and should be able to double-check everything.
Mary
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu
I'm working for my owner, who can be reached
at labmembers-owner@snf.stanford.edu.
Messages to you from the labmembers mailing list seem to
have been bouncing. I've attached a copy of the first bounce
message I received.
If this message bounces too, I will send you a probe. If the probe bounces,
I will remove your address from the labmembers mailing list,
without further notice.
I've kept a list of which messages from the labmembers mailing list have
bounced from your address.
Copies of these messages may be in the archive.
To retrieve a set of messages 123-145 (a maximum of 100 per request),
send an empty message to:
<labmembers-get.123_145@snf.stanford.edu>
To receive a subject and author list for the last 100 or so messages,
send an empty message to:
<labmembers-index@snf.stanford.edu>
Here are the message numbers:
4200
--- Enclosed is a copy of the bounce message I received.
Return-Path: <>
Received: (qmail 23993 invoked from network); 10 Jul 2010 15:33:49 -0000
Received: from smtp-unencrypted1.stanford.edu (HELO smtp-unencrypted.stanford.edu) (171.67.219.75)
by snf.stanford.edu with SMTP; 10 Jul 2010 15:33:49 -0000
Received: by smtp-unencrypted.stanford.edu (Postfix)
id 99D1F4562C5; Sat, 10 Jul 2010 08:33:49 -0700 (PDT)
Date: Sat, 10 Jul 2010 08:33:49 -0700 (PDT)
From: MAILER-DAEMON@stanford.edu (Mail Delivery System)
Subject: Undelivered Mail Returned to Sender
To: labmembers-return-4200-snfblog.P5000=blogger.com@snf.stanford.edu
Auto-Submitted: auto-replied
MIME-Version: 1.0
Content-Type: multipart/report; report-type=delivery-status;
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A Ph.D. Defense Announcement
"Magnetic Sifter and Nanoparticles for Cell and Protein Separation"
PhD Candidate: Chris Earhart
Department of Materials Science and Engineering
Advisor: Professor Shan X. Wang
Date: Wednesday, July 28, 2010
Time: 9:30 am (refreshments at 9:15 am)
Place: CIS-X Auditorium (Rm 101)
Abstract:
Nanoscience and nanotechnology have been applied in recent years to cancer research, with the goal of making a revolutionary change in the ways in which cancer is diagnosed and treated. Magnetic nanotechnologies, in particular, have shown significant potential in several areas such as imaging, therapeutics, and early detection. The topic of this presentation is a novel magnetic separation device, the magnetic sifter, and physically fabricated magnetic nanoparticles for applications in cell and protein separation.
The magnetic sifter is a microfabricated planar die containing a dense array of pores (~200-5000/mm2) in a magnetically soft membrane. When magnetized by an external field, the sifter pores generate large magnetic field gradients near the pore edges, which capture nanoscale magnetic carriers during flow with high efficiency and throughput. The magnetic sifter is a microfluidic device, in the sense that it contains microfabricated, micron-scale pores for fluid flow. It is also a macrofluidic device, in that high-volume throughput is achieved by parallel flow through the large number of pores.
When paired with magnetic carriers functionalized with recognition moieties, the magnetic sifter can be used in both cell and protein enrichment schemes. Separations of magnetically labeled tumor cells and individual magnetic nanoparticles using the sifter will be discussed. With its planar structure and presentation of captured cells, the sifter can also be used as a cell imaging platform. The use of the sifter to capture and quantify low concentrations (~100/mL) of tumor cells in whole blood samples has been demonstrated.
Lastly, a method for high-throughput fabrication of novel magnetic carriers, synthetic antiferromagnetic (SAF) nanoparticles, will be presented. The method has enabled production of large quantities of SAF nanoparticles, which have desirable properties for applications in magnetic separation. The capture and release of SAF nanoparticles with the magnetic sifter has been shown. High capture efficiencies are achieved at flow rates 10-20x higher than what was previously possible with commercially available magnetic carriers.
Just in case you haven't received the information on the Memorial Service
for Pat Burke.
Here it is.
Sincerely,
Maureen
Maureen Baran
Stanford Nanofabrication Facility
Lab Services Administrator
mbaran@stanford.edu
650-725-3664
-----Original Message-----
From: Carol Muller [mailto:cbmuller@stanford.edu]
Sent: Friday, July 16, 2010 6:03 PM
To: Hernandez, Rita; eefaculty@mailman.stanford.edu;
ee-adminlist@mailman.stanford.edu; ee-students@mailman.stanford.edu;
cis-building@cis.stanford.edu; Clare; Tiiu Johnson; rabbipkn@stanford.edu;
mclennan@stanford.edu; Rosan E. Gomperts; soe-finance@lists.stanford.edu;
soe-dept-mgrs@mailman.stanford.edu; Naaf, Marian; Dr. Alejandro M. Martinez;
lfaris@stanford.edu; Ken Hsu; mfe@stanford.edu; carolv@stanford.edu;
a.hernandez@stanford.edu; k.lee-anderson@stanford.edu; npete@stanford.edu;
elaineray@stanford.edu
Cc: Allison Hecimovich; mahnaz@stanford.edu; John Shott; Alfs, Marjorie M
Subject: Memorial Service for Pat Burke - Thursday, July 22, 4 p.m.,
Memorial Church
Friends and colleagues,
After speaking with Pat Burke's family members, we've determined a
memorial service will be held Thursday, July 22 at 4:00 p.m. in Memorial
Church. I hope many of you will be able to attend. If you are aware of
others who would want to know, I'd appreciate your help in forwarding
this message. Pat had many dear friends and colleagues across the
Stanford community.
I will send out further information next week, and I'd welcome hearing
from any of you who would like to be involved in planning for it --
there will be a meeting Monday at 2 p.m. in the Round Room at Memorial
Church for this purpose.
Thanks to all of you who have already reached out to one another to
share our sorrow -- Pat was a remarkable human being who clearly
treasured Stanford and his colleagues here.
Carol Muller
Mark A Horowitz wrote:
>
> Colleagues,
>
> I am now able to release information about the tragic death which was
> discovered yesterday morning. I'm deeply sorry to let you know that
> Pat Burke, our long-time IT manager and network/systems administrator,
> apparently took his life. Pat has been an incredibly conscientious,
> much appreciated contributor to and friend in our community here, and
> his loss leaves us all grieving.
>
> There will be a meeting this morning at 9:00 a.m. in Packard 101, at
> which I will share the few details we know, and we can provide support
> to each other in this difficult time.
>
> I've asked Carol Muller to be the point person for us in collecting
> your thoughts about how we can best remember and recognize Pat's
> substantial contributions to our work and friendship over the years.
> We'll keep you informed about planning a memorial service.
>
> I want to provide again the information for you or others you may
> notice who need support in dealing with this situation, about
> resources available:
>
> Help Center 723-4577
>
> Human Resources 736-9881
>
> Office for Religious Life 723-1762
>
> CAPS 723-3785
>
> In situations like this I am glad that we're in a department where
> people really care about each other, and that we will rally together
> to help us all get through this difficult time.
>
> Your friend,
>
> Mark
>
> ------------------------------------------------------------------------
>
> _______________________________________________
> eefaculty mailing list
> eefaculty@lists.stanford.edu
> https://mailman.stanford.edu/mailman/listinfo/eefaculty
>
--
Carol B. Muller, Ph.D.
Department Manager, Electrical Engineering
School of Engineering
Packard 168
Stanford University
Stanford, CA 94305
cbmuller@stanford.edu
650-723-4607
M
Mary Tang wrote:
> Hi all --
>
> Just a reminder: it's TODAY!
>
>
> ************************
>
> Dear labmembers --
>
>
> Jim Kruger (Coral ID jimkruger, aka the distinguished, bearded
> gentleman in the Hawaiian shirt) will be on leave from SNF for a
> couple of months. Please join us for a little chocolate cake and a
> great show of appreciation for his gentle warmth and astounding
> technical depth. We'll meet Monday, July 19, 1 pm at his desk, which
> will be enshrined and preserved for his return.
>
>
> Your SNF Staff
>
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu
Just a reminder: it's TODAY!
************************
Dear labmembers --
Jim Kruger (Coral ID jimkruger, aka the distinguished, bearded gentleman
in the Hawaiian shirt) will be on leave from SNF for a couple of
months. Please join us for a little chocolate cake and a great show of
appreciation for his gentle warmth and astounding technical depth.
We'll meet Monday, July 19, 1 pm at his desk, which will be enshrined
and preserved for his return.
Your SNF Staff
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu
From: ee-students-bounces@lists.stanford.edu [mailto:ee-students-bounces@lists.stanford.edu] On Behalf Of Natasha Newson
Sent: Wednesday, July 14, 2010 10:51 AM
To: Subject: EE PhD Oral Examination - Yijie Huo, Monday, July 19, 2010; 10:00 a.m.
Speaker: Yijie Huo
Advisor: James S. Harris
Date: Monday, July 19, 2010
Time: 10:00 a.m.
Location: CIS-X 101 Auditorium
Title: Group IV materials and devices for Si photonic integrated circuits
Silicon photonics has generated much interest in the past 10 years due to its ability to enhance the performance of CMOS integrated circuits (IC). The interconnect bandwidth limitation becomes a more and more critical challenge with device scaling. Optical communication has the ability to solve this emerging problem due to its high speed, high bandwidth, and low power consumption. Most of the key devices in Si photonic ICs have already been demonstrated, such as waveguides, detectors, and modulators. However, a practical silicon-compatible coherent light source is still a major challenge.
Germanium has already been demonstrated to be a promising material for optoelectronic devices, such as photo-detectors and modulators. However, Ge is an indirect band gap semiconductor that has strong phonon-assisted non-radiative recombination which overcomes the radiative recombination. This makes Ge-based light sources very inefficient and difficult to realize. Fortunately, Ge has a direct G valley that is only 0.13eV higher in energy than the indirect L valley, suggesting that with band-structure engineering, Ge has the potential to become a direct band gap material and an efficient light emitter.
In this talk, we first present the background and the key devices of Si photonic ICs. We then focus on how band-structure engineering can be used on Ge to achieve a direct band gap semiconductor by use of either tensile stain or GeSn alloys. To achieve high biaxial tensile strain (up to 2.3%), Ge QWs were grown on top of fully-relaxed InGaAs buffer layers in our MBE system and were verified by AFM, XRD, Raman spectroscopy, and TEM. A strong increase of photoluminescence (PL) from strained Ge layers and the temperature-dependent PL intensity prove that a direct band gap semiconductor was achieved. We also achieved more than 7% Sn incorporation in Ge, which is much higher than the 1% solid solubility limit of Sn inside Ge. Material characterization shows good crystal quality without precipitation or phase segregation. Direct band gap narrowing is observed with increasing Sn percentage, which is consistent with theoretical predication. Possible applications from this work will also be discussed.
Jim Kruger (Coral ID jimkruger, aka the distinguished, bearded gentleman
in the Hawaiian shirt) will be on leave from SNF for a couple of
months. Please join us for a little chocolate cake and a great show of
appreciation for his gentle warmth and astounding technical depth.
We'll meet Monday, July 19, 1 pm at his desk, which will be enshrined
and preserved for his return.
Your SNF Staff
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu
i need to etch Cu on blue tape with 3612 resist as a protective covering
after litho. Nitric Acid etches Cu but will also etch away the resist.
sputtering in mrc is an alternative too, but wet-etch would be cleaner.
Thank you.
S
A number of folks have been receiving email messages today with the
subject line "Your Amazon.com Order" .... that claims to be a
confirmation of an order at Amazon.com. Don't be fooled .... this seems
to be some sort of phishing scheme coming from Romania.
Do not click on any of the links, but delete this message as quickly as
possible.
Thanks,
John
From: ee-students-bounces@lists.stanford.edu [mailto:ee-students-bounces@lists.stanford.edu] On Behalf Of Natasha Newson
Sent: Wednesday, July 14, 2010 10:51 AM
To: ee-students@mailman.stanford.edu
Subject: EE PhD Oral Examination - Yijie Huo, Monday, July 19, 2010; 10:00 a.m.
Speaker: Yijie Huo
Advisor: James S. Harris
Date: Monday, July 19, 2010
Time: 10:00 a.m.
Location: CIS-X 101 Auditorium
Title: Group IV materials and devices for Si photonic integrated circuits
Silicon photonics has generated much interest in the past 10 years due to its ability to enhance the performance of CMOS integrated circuits (IC). The interconnect bandwidth limitation becomes a more and more critical challenge with device scaling. Optical communication has the ability to solve this emerging problem due to its high speed, high bandwidth, and low power consumption. Most of the key devices in Si photonic ICs have already been demonstrated, such as waveguides, detectors, and modulators. However, a practical silicon-compatible coherent light source is still a major challenge.
Germanium has already been demonstrated to be a promising material for optoelectronic devices, such as photo-detectors and modulators. However, Ge is an indirect band gap semiconductor that has strong phonon-assisted non-radiative recombination which overcomes the radiative recombination. This makes Ge-based light sources very inefficient and difficult to realize. Fortunately, Ge has a direct G valley that is only 0.13eV higher in energy than the indirect L valley, suggesting that with band-structure engineering, Ge has the potential to become a direct band gap material and an efficient light emitter.
In this talk, we first present the background and the key devices of Si photonic ICs. We then focus on how band-structure engineering can be used on Ge to achieve a direct band gap semiconductor by use of either tensile stain or GeSn alloys. To achieve high biaxial tensile strain (up to 2.3%), Ge QWs were grown on top of fully-relaxed InGaAs buffer layers in our MBE system and were verified by AFM, XRD, Raman spectroscopy, and TEM. A strong increase of photoluminescence (PL) from strained Ge layers and the temperature-dependent PL intensity prove that a direct band gap semiconductor was achieved. We also achieved more than 7% Sn incorporation in Ge, which is much higher than the 1% solid solubility limit of Sn inside Ge. Material characterization shows good crystal quality without precipitation or phase segregation. Direct band gap narrowing is observed with increasing Sn percentage, which is consistent with theoretical predication. Possible applications from this work will also be discussed.
"Spreading Resistance Analysis (SRP)"
Speaker - Roger Brennan
Date: Jul 13, Tuesday
Time: 2p - 3p
Cypress Semiconductor Auditorium (Former CISX101 auditorium) Allen Building
Brief Abstract of Presentation:
Using a pair of tiny probe tips, it is usually possible to extract a
resistivity-depth profile in silicon and germanium. Assuming
published values of carrier mobility (derived from single-crystal
material), it is possible to calculate a carrier concentration-depth
profile -- critical for device performance.
SRP had a dynamic range of about 9 decades and can cover the entire
resistivity range in one profile if needed. Of course, as with all
measurement techniques, it has its limitations.
Bio for the speaker - Roger Brennan
While working as a chemist, about two years after earning his BS in
Chemistry (Marshall University, 1963), he became excited about
semiconductor processing. Thirty-six resumes later, he became the
masking engineer for the beginning MOS production effort at Texas
Instruments, Dallas TX. Over the years, he has been a diffusion and
masking engineer working with bipolar, MOS, and MEMS -- both analog
and digital. Late in1979, he discovered Solecon Labs and the
usefulness of their spreading resistance analysis. He joined Solecon
in 1980 as the laboratory manager and served as president from 1992
until retirement in 1997. He returned as a "retread" in 2004 and has
been serving as the applications director.
Maureen Baran
Stanford Nanofabrication Facility
Lab Services Administrator
mbaran@stanford.edu
650-725-3664
Just a reminder of two events for today, Monday, July 12:
1. Biweekly Process Clinic: 2-3 pm, in the cubicle area by Maureen's
office. Bring device sketches, process questions/runsheets, and mask
layouts. Staff and experienced labmembers will be on hand to brainstorm
solutions.
2. Venture Clinic with Shahin Farschi of Lux Capital: 4:30 pm in Allen
101 conference room. Learn about the venture world or discuss your
startup ideas.
Everyone from the labmember community is welcome.
Your SNF Staff
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu
--
Ching-Mei Hsu
PhD Candidate
Materials Science and Engineering
Stanford University
McCullough rm. 209
476 Lomita Mall
Stanford, CA 94305
Speaker - Roger Brennan
Date: Jul 13, Tuesday
Time: 2p - 3p
Cypress Semiconductor Auditorium (Former CISX101 auditorium) Allen Building
Brief Abstract of Presentation:
Using a pair of tiny probe tips, it is usually possible to extract a
resistivity-depth profile in silicon and germanium. Assuming
published values of carrier mobility (derived from single-crystal
material), it is possible to calculate a carrier concentration-depth
profile -- critical for device performance.
SRP had a dynamic range of about 9 decades and can cover the entire
resistivity range in one profile if needed. Of course, as with all
measurement techniques, it has it limitations.
Bio for the speaker - Roger Brennan
While working as a chemist, about two years after earning his BS in
Chemistry (Marshall University, 1963), he became excited about
semiconductor processing. Thirty-six resumes later, he became the
masking engineer for the beginning MOS production effort at Texas
Instruments, Dallas TX. Over the years, he has been a diffusion and
masking engineer working with bipolar, MOS, and MEMS -- both analog
and digital. Late in1979, he discovered Solecon Labs and the
usefulness of their spreading resistance analysis. He joined Solecon
in 1980 as the laboratory manager and served as president from 1992
until retirement in 1997. He returned as a "retread" in 2004 and has
been serving as the applications director.
--
Caitlin R. Azhderian, Ed.M
Student Services- Courses and Teaching Assistant Appointments
Stanford University
Department of Electrical Engineering
350 Serra Mall, 172
Stanford, CA 94305-9505
P: 650.724.0531
F: 650.723.1882
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu
Dear Lab Members:
A pair of glasses was found in the Gryphon aisle of the lab. The frames are brown and clear stripped if these are yours please come by my desk and claim them.
Thanks,
Maureen
Maureen Baran
Stanford Nanofabrication Facility
Lab Services Administrator
mbaran@stanford.edu
650-725-3664
Greetings labmembers -- Shahin Farschi of Lux Capital will be hosting the Venture Clinic next Monday, July 12, at 4:30 pm, in Allen 101. Here's an opportunity to learn about the current climate in the venture world or bounce around any startup ideas you might have. Shahin's contact information is below: Shahin Farshchi, Ph.D. Senior Associate Lux Capital Management, LLC C: 925.323.2784 http://www.luxcapital.com
-- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang@stanford.edu http://snf.stanford.edu
Thanks,
Mary
Woo Shik Jung wrote:
> Dear labmembers,
>
> There is a strange odor in the tylanbpsg areathermcopoly1 area. Mary
> Tang recommended that people should not go near the are and evacuate
> the lab if the smell spreads.
>
> Regards,
>
> Wooshij Jung
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu
An item was found in the gowning room and given to me for safe keeping. If you believe you misplaced something in the gowning room please come to my cubicle #41 and claim.
Maureen
Maureen Baran
Stanford Nanofabrication Facility
Lab Services Administrator
mbaran@stanford.edu
650-725-3664
