MSE PhD Defense, Seong-Geon Park (Feb 7th, Monday, 10:30 am, CISX Auditorium)

University PhD Dissertation Defense

 

“The study of Resistive Switching Mechanism in TiO₂ using First Principles Calculation.”

 

Seong-Geon Park

 

Research Advisor: Prof. Yoshio Nishi

 

Monday, Feb 7^th, 2011,  10:30 am (Refreshments served at 10:15 am)

 

Location: Paul G. Allen Auditorium (CISX 101)

http://cis.stanford.edu/misc/directions.html

 

 

Abstract

Recently the interest in Resistive Random Access Memory (ReRAM) has been significantly increased, as it is now considered as the promising candidate for the next generation of non-volatile memory devices, due to its high density, low operating power, fast switching speed, and compatibility conventional CMOS process. Among many resistance switching materials, TiO₂ has been widely studied. However, the most challenging issue is that the underlying switching mechanism is lacking an in-debt understanding. It has been proposed that the resistance switching is strongly coupled to the presence and a preferential distribution of oxygen vacancies involving the formation of a conductive filament. Although many experiments have been done to address the switching mechanism during the last decade, it is hard to figure out what happens in microscopic level. Therefore systematic interpretation about the microscopic details of the role of oxygen vacancies in the formation of a conductive filament is essential.  To address the conduction and resistance switching mechanism, the effect of oxygen vacancies on the electronic structures in TiO₂ has been investigated using first principle study based on density functional theory.

 

In this talk, I will first discuss “ON”-state (Low Resistance State) conduction mechanism of rutile TiO₂ in terms of oxygen vacancies, and then the transition from “ON” to “OFF”-state (High Resistance State) will be demonstrated. Although it is known that TiO₂ exhibits n-type semiconducting conductivity with extra electron carriers generated by the formation of oxygen vacancies, “ON” and “OFF”-state conductivity during resistance switching cannot be explained by isolated single oxygen vacancy. I will demonstrate electronic characteristics such as density of states, electron localization function, band decomposed charge density distribution, and energy band structure, and show how they changes by oxygen vacancies. The influence of the number of oxygen vacancies and different configurations of multi vacancies on the resistance change will be discussed. Oxygen vacancy ordering and the diffusion of either vacancy or hydrogen has a significant impact on both the formation of a conductive filament and the transition from “ON” to “OFF”-state. Results from this work suggest “ON”-state conduction and resistance switching modeling that could be described by the formation and rupture of a conductive filament incorporating oxygen vacancy ordered structure.

No temperature/humidity control or air flow in L102 this weekend ....

SNF lab members:

I've just received notification from FacOps that the transfer fan motor
that pushes air into L102 (the svgcoat/svgdev aisle) has shorted out and
taken the motor controller with it. As a result, there will be no
direct air coming from the HEPA filters in that area. Temperature
control, humidity control, and cleanliness are likely to degrade over
the weekend.

In particular, you should keep a close eye on the temperature and
humidity readout in that area if you are conducting critical work.

It is too early to know when this system will be back on line, but best
case is likely sometime on Monday.

Thank you for your support,

John

Problem p5000etch SNF 2011-01-28 16:06:23: No HBr

HBr has been shut down for the weekend.

Re: Problem p5000etch SNF 2011-01-27 15:59:26: No HBr

Turned on by Mike

WVASE32 Short Course Announcement

All,

SNF is supporting JA Woollam by host their WVASE32 short course here
on campus. This is a great opportunity to learn from the experts and
to become an analysis expert. If you are interested in attending,
you need to contact JA Woollam directly.

Regards,

>Date: Fri, 28 Jan 2011 11:29:10 -0600
>From: Veronica Cockerill <vcockerill@jawoollam.com>
>Subject: WVASE32 Short Course Announcement
>
>
>Dear J.A. Woollam Customers,
>
>We would like to invite you to our next WVASE32 Data Analysis
>Fundamentals Short Course being held April 5-8 at the Stanford
>University in Stanford, California. I have attached a course
>description and registration form. If you would like to attend,
>please fill out the registration form completely and fax back to me
>at +1(402)-477-8214 by March 25, 2011. Once I receive your
>registration form, I will send a confirmation email.
>
>This course will focus on data analysis methods for spectroscopic
>ellipsometry with a significant amount of "hands-on" computer time.
>For this reason, participants should be familiar with WVASE32 software.
>
>If you have any questions, please let me know.
>
>Best regards,
>Veronica
>
>*******************************
>Veronica Cockerill
>Marketing Coordinator
>J. A. Woollam Co., Inc.
>645 M Street, Suite 102
>Lincoln, NE 68508
>vcockerill@jawoollam.com
>Phone: (402)477-7501 x101
>Fax: (402)477-8214

Shipley Microposit S1400 Series Resist

Dear Labmembers,

Do any of you currently use this resist or know anyone on campus who does?  If so, could you please get in contact with me?  I am trying to use this resist as an adhesion layer for PMMA on gallium arsenide, and so any advice you have in this regard would be appreciated, as well.

Cheers,

Vijay Kris Narasimhan

Problem p5000etch SNF 2011-01-27 15:59:26: No HBr

The HBr has been turned off for the night

Re: ITO deposition

Hello Yihong!

 

I have been copied on your email thread with Edwin and I understand you have need for ITO. We do have the ability to PVD sputter ITO, please let me know your application requirements, film thickness and substrate sizes and I will be able to supply you a quote and lead time.

 

Please feel free to contact me with any questions you may have.

 

Thank you very much,

 

Laurel Vera

Client Operations

Hionix, Inc.
2363 Bering Drive
San Jose, CA 95131
www.hionix.com
Ph: 408-240-7781
Fx: 408-762-4305

On Wed, Jan 26, 2011 at 6:08 PM, Edwin Adhiprakasha <Edwin.Adhiprakasha@invisageinc.com> wrote:

Hi all,

 

You can inquire with Hionix for ITO deposition. Please contact Laurel Vera (her e-mail address is in the cc field). Good luck!!

 

 

Edwin

 

From: Yihong Chen [mailto:yhngchen@stanford.edu]
Sent: Wednesday, January 26, 2011 5:16 PM
To: Han-Bo-Ram Lee
Cc: labmembers@snf.stanford.edu
Subject: Re: ITO deposition

 

Also interested, can you please let me know if you find one?

 

Thanks,

 

-Yihong

 

On Wed, Jan 26, 2011 at 4:54 PM, Han-Bo-Ram Lee <sixram@stanford.edu> wrote:

Hi all,

 

Is there anyone know about available ITO deposition by sputtering?

 

It's not matter that the chamber is in a lab or from company service.

 

Thanks in advance.

 

Boram

 

Han-Bo-Ram Lee, Ph.D
Bent Research Group
Department of Chemical Engineering
Stanford University

Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305
Email : sixram[at]stanford.edu or sixram[at]gmail.com
WWW : bentgroup.stanford.edu/

--
Yihong Chen

PhD Candidate
Department of Chemistry
Stanford University
*************************************
Lokey Laboratories, RM 229
337 Campus DR
Stanford, CA 94305-5080
Phone: (650) 723-1610
Email: yhngchen@stanford.edu

 

--

EE PhD Defense, Hyung Dong Lee (Wednesday, Feb 9th, 2011, 10:00 am, CISX Auditorium)

Stanford University Ph.D. Dissertation Defense

Title: "Understanding of NiO-based unipolar resistive switching"

 

Hyung Dong Lee

Electrical Engineering 
Research Advisor: Prof. Yoshio Nishi

 

Data: Wednesday, Feb 9th, 2011

Time: 10:00 am (Refreshments served at 9:45 am)

Location: Paul G. Allen Building Auditorium (CISX 101X)

Abstract

As NAND Flash memory technology is facing challenging issues such as electronic coupling between adjacent cells or high coupling of the control gate with floating gate in scaling down to and beyond 16nm technology node, investigations of new functional devices or materials has been attempted for next-generation memory technology to continue development of memory technology beyond 16 technology generation. One of new emerging non-volatile memories is resistance change random access memory(ReRAM) satisfying the requirements to replace NAND Flash; low cost, simple structure, promising 8nm technology node, low power dissipation, high endurance, possible integration in crossbar arrays in 3D.

In ReRAM, understanding the switching mechanism was very complicated because there have been many different switching phenomena in circumstances under ultimate electrical stress. One of them, oxidation/reduction of transition metals is generally accepted for unipolar switching. In this switching phenomenon, both thermal and chemical processes are correlated with the effect of electric field. To suggest clearer understanding of switching mechanism for unipolar switching, defect states in NiO are investigated, which are closely related conductivity in the transition metal-based resistive materials. Setting up feasible "ON" and "OFF" states in atomic scale gave an insight into atomic structure of conductive filament, role of oxygen (or oxygen vacancies) and its migration. With the understandings from first principle simulations, physically quantitative model about reset/retention and filament formation could be suggested. In addition to that, obtained experimental results like reduction of reset current and long retention time of R_ON due to inserted interfacial layer could be explained based on the quantitative model.

RE: ITO deposition

Hi all,

 

You can inquire with Hionix for ITO deposition. Please contact Laurel Vera (her e-mail address is in the cc field). Good luck!!

 

 

Edwin

 

From: Yihong Chen [mailto:yhngchen@stanford.edu]
Sent: Wednesday, January 26, 2011 5:16 PM
To: Han-Bo-Ram Lee
Cc: labmembers@snf.stanford.edu
Subject: Re: ITO deposition

 

Also interested, can you please let me know if you find one?

 

Thanks,

 

-Yihong

 

On Wed, Jan 26, 2011 at 4:54 PM, Han-Bo-Ram Lee <sixram@stanford.edu> wrote:

Hi all,

 

Is there anyone know about available ITO deposition by sputtering?

 

It's not matter that the chamber is in a lab or from company service.

 

Thanks in advance.

 

Boram

 

Han-Bo-Ram Lee, Ph.D
Bent Research Group
Department of Chemical Engineering
Stanford University

Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305
Email : sixram[at]stanford.edu or sixram[at]gmail.com
WWW : bentgroup.stanford.edu/

--
Yihong Chen

PhD Candidate
Department of Chemistry
Stanford University
*************************************
Lokey Laboratories, RM 229
337 Campus DR
Stanford, CA 94305-5080
Phone: (650) 723-1610
Email: yhngchen@stanford.edu

 

Re: ITO deposition

You might want to check the TFD. We've been using their facilities several times with good results.
http://www.tfdinc.com/

Sergei

On 1/26/2011 4:54 PM, Han-Bo-Ram Lee wrote:

Hi all,

Is there anyone know about available ITO deposition by sputtering?

It's not matter that the chamber is in a lab or from company service.

Thanks in advance.

Boram

Han-Bo-Ram Lee, Ph.D
Bent Research Group
Department of Chemical Engineering
Stanford University

Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305
Email : sixram[at]stanford.edu or sixram[at]gmail.com
WWW : bentgroup.stanford.edu/

Re: good ITO deposition source

Hi all,
I have a very good source for ITO (good quality...I have tried a couple and this is the best)
They specialize in transparent conductive films.  Check out their website.

www.advancedfilmservices.com

also   quote@advancedfilmservices.com

828 Charcot Ave.
San Jose, Ca 95131
408-321-8879









----- Original Message -----
From: "Han-Bo-Ram Lee" <sixram@stanford.edu>
To: labmembers@snf.stanford.edu
Sent: Wednesday, January 26, 2011 4:54:01 PM
Subject: ITO deposition

Hi all,

Is there anyone know about available ITO deposition by sputtering?

It's not matter that the chamber is in a lab or from company service.

Thanks in advance.

Boram

Han-Bo-Ram Lee, Ph.D
Bent Research Group
Department of Chemical Engineering
Stanford University

Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305
Email : sixram[at]stanford.edu or sixram[at]gmail.com
WWW : bentgroup.stanford.edu/

Re: ITO deposition

All -

There's a good sputtering services company called Advanced Film Services in San Jose (advancedfilmservices.com). I've used them. You can see an ITO datasheet on the website. 

Mike Vyvoda

Twin Creeks Technologies

On Jan 26, 2011, at 9:15 PM, Yihong Chen <yhngchen@stanford.edu> wrote:

Also interested, can you please let me know if you find one?

Thanks,

-Yihong

On Wed, Jan 26, 2011 at 4:54 PM, Han-Bo-Ram Lee <sixram@stanford.edu> wrote:

Hi all,

Is there anyone know about available ITO deposition by sputtering?

It's not matter that the chamber is in a lab or from company service.

Thanks in advance.

Boram

Han-Bo-Ram Lee, Ph.D
Bent Research Group
Department of Chemical Engineering
Stanford University

Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305
Email : sixram[at]stanford.edu or sixram[at]gmail.com
WWW : bentgroup.stanford.edu/

--
Yihong Chen

PhD Candidate
Department of Chemistry
Stanford University
*************************************
Lokey Laboratories, RM 229
337 Campus DR
Stanford, CA 94305-5080
Phone: (650) 723-1610
Email: yhngchen@stanford.edu

Re: ITO deposition

Also interested, can you please let me know if you find one?

Thanks,

-Yihong

On Wed, Jan 26, 2011 at 4:54 PM, Han-Bo-Ram Lee <sixram@stanford.edu> wrote:

Hi all,

Is there anyone know about available ITO deposition by sputtering?

It's not matter that the chamber is in a lab or from company service.

Thanks in advance.

Boram

Han-Bo-Ram Lee, Ph.D
Bent Research Group
Department of Chemical Engineering
Stanford University

Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305
Email : sixram[at]stanford.edu or sixram[at]gmail.com
WWW : bentgroup.stanford.edu/

--
Yihong Chen

PhD Candidate
Department of Chemistry
Stanford University
*************************************
Lokey Laboratories, RM 229
337 Campus DR
Stanford, CA 94305-5080
Phone: (650) 723-1610
Email: yhngchen@stanford.edu

ITO deposition

Hi all,

Is there anyone know about available ITO deposition by sputtering?

It's not matter that the chamber is in a lab or from company service.

Thanks in advance.

Boram

Han-Bo-Ram Lee, Ph.D
Bent Research Group
Department of Chemical Engineering
Stanford University

Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305
Email : sixram[at]stanford.edu or sixram[at]gmail.com
WWW : bentgroup.stanford.edu/

Comment p5000etch SNF 2011-01-26 11:15:53: Replaced Freon 318 cylinder

Gas used in Ch.B

Re: Problem p5000etch SNF 2011-01-24 14:16:48: Ch.C is down for handling

Adjusted the middle metering valve on the clamp pneumatic cylinder. Cycled 50 wafers with no problems.

MSE PhD Defense, Seong-Geon Park (Feb 7th, Monday, 10:30 am, CISX Auditorium)

University PhD Dissertation Defense

 

“The study of Resistive Switching Mechanism in TiO₂ using First Principles Calculation.”

 

Seong-Geon Park

 

Research Advisor: Prof. Yoshio Nishi

 

Monday, Feb 7^th, 2011,  10:30 am (Refreshments served at 10:15 am)

 

Location: Paul G. Allen Auditorium (CISX 101)

http://cis.stanford.edu/misc/directions.html

 

 

Abstract

Recently the interest in Resistive Random Access Memory (ReRAM) has been significantly increased, as it is now considered as the promising candidate for the next generation of non-volatile memory devices, due to its high density, low operating power, fast switching speed, and compatibility conventional CMOS process. Among many resistance switching materials, TiO₂ has been widely studied. However, the most challenging issue is that the underlying switching mechanism is lacking an in-debt understanding. It has been proposed that the resistance switching is strongly coupled to the presence and a preferential distribution of oxygen vacancies involving the formation of a conductive filament. Although many experiments have been done to address the switching mechanism during the last decade, it is hard to figure out what happens in microscopic level. Therefore systematic interpretation about the microscopic details of the role of oxygen vacancies in the formation of a conductive filament is essential.  To address the conduction and resistance switching mechanism, the effect of oxygen vacancies on the electronic structures in TiO₂ has been investigated using first principle study based on density functional theory.

 

In this talk, I will first discuss “ON”-state (Low Resistance State) conduction mechanism of rutile TiO₂ in terms of oxygen vacancies, and then the transition from “ON” to “OFF”-state (High Resistance State) will be demonstrated. Although it is known that TiO₂ exhibits n-type semiconducting conductivity with extra electron carriers generated by the formation of oxygen vacancies, “ON” and “OFF”-state conductivity during resistance switching cannot be explained by isolated single oxygen vacancy. I will demonstrate electronic characteristics such as density of states, electron localization function, band decomposed charge density distribution, and energy band structure, and show how they changes by oxygen vacancies. The influence of the number of oxygen vacancies and different configurations of multi vacancies on the resistance change will be discussed. Oxygen vacancy ordering and the diffusion of either vacancy or hydrogen has a significant impact on both the formation of a conductive filament and the transition from “ON” to “OFF”-state. Results from this work suggest “ON”-state conduction and resistance switching modeling that could be described by the formation and rupture of a conductive filament incorporating oxygen vacancy ordered structure.

Re: Transmission/absorption/reflectivity measurements

I think theres a Spectrophotometer available to trained users in Ginzton.

What kind of films have you deposited on quartz?

Edgar

On Mon, Jan 24, 2011 at 4:49 PM, Andrei Iancu <dre17@stanford.edu> wrote:

Good afternoon SNF labmembers,

I am interested in characterizing the transmission/absorption/reflectivity properties of a number of thin films deposited on quartz but do not have a system to perform these measurements.  Does anyone happen to know if a system capable of these types of measurements is available on campus?

Thanks for your time,

Andrei Iancu
Stanford University Mechanical Engineering
Nanoscale Prototyping Lab
440 Escondido Mall Bldg 530 Rm 226
Stanford, CA 94305
Cell: 562-225-2463

Transmission/absorption/reflectivity measurements

Good afternoon SNF labmembers,

I am interested in characterizing the transmission/absorption/reflectivity properties of a number of thin films deposited on quartz but do not have a system to perform these measurements. Does anyone happen to know if a system capable of these types of measurements is available on campus?

Thanks for your time,

Andrei Iancu
Stanford University Mechanical Engineering
Nanoscale Prototyping Lab
440 Escondido Mall Bldg 530 Rm 226
Stanford, CA 94305
Cell: 562-225-2463

Etching Nickel films

Hello all,

I am wondering if anybody has experience etching pure Nickel thin films, using wet or dry etching techniques?

Thanks,
Neil

Problem p5000etch SNF 2011-01-24 14:16:48: Ch.C is down for handling

The robot blade intermittently hits the clamp during the wafer unload. It occurs when the blade is on its way out the chamber. The clamp is suppose to go from the LIFT to the RELEASE position and HOLD until the blade is all the way out. What is happening is instead of holding, the clamp continues to the clamp position.

Process Clinic - Today, 2 pm

Greetings labmembers!

Process Clinic today (Monday) from 2-3 pm. We
meet in the cubicle area near Maureen's office. Bring your processing
questions and SpecMat requests. Staff and experienced labmembers will
be on hand to help brainstorm solutions and review requests. All in the
lab community are welcome.

Your SNF staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

residue after HF vapor etch?

Hi all,
Has anyone seen an obscure residue develop on a wafer after doing an HF vapor etch on oxide film?  I've seen this in the past and am not sure what is causing it.  If you have any ideas I would love to hear them.

Here are my ideas:
1) condensation of water from the air causing variations in the etch.  I fabricated a teflon holder to clamp small pieces to the hotplate to ensure no condensation forms and still see the residue, so probably not that.
2) residue of silicon dust from scribing.  The problem seems to be more common for small pieces that have been cleaved.  Maybe a thin residue of silicon dust from the cleaving is coated on the surface causing problems with the etch.  I will try re-cleaning the small pieces after cleaving to see if this helps.
3) Thin layer of contamination from an earlier step in the process.  I'm reaching here. I follow all the clean protocols, but due use cmp for several layers so could be related to that.  Though I would expect it to be consistent, not intermitent, and not preferential to small pieces.

Any other thoughts or experience?

Thanks,
Chris

single side KOH etching of silicon

Does anyone know the name of the company that manufactures a PEEK wafer holder that seals off one side of a wafer for single-sided chemical etching?

 

Thanks,

Hector

 

____________________________________

Hector Cavazos

Asylum Research

 

 

students needed for UCB nanoclub visit

SNF Labmembers,
    On Friday, February 4 in the afternoon, about 20 members of the UC Berkeley Nanotechnology Club are visiting SNF.  We will give them a presentation about SNF and a window tour.  They also request that a couple students, post-docs, etc. give short presentations (15-20 minutes) of their research.  Is anyone interested in doing this? 
(And making jokes about UCB would be highly encouraged. haha)     Thanks.
                   -Mike Deal, SNF

high precision 'scope?

We're looking to borrow a high precision digital, or perhaps an analog, oscilloscope for today.  Preferably it can take 2 channels of input and output data to a computer, but that isn't 100% necessary.

Does anyone have one we can borrow?

Thanks,

Tim

Pd etching rate

Dear All,

Does anyone know about the etching of Pd on Si? What kind of chemical is used and what is the approximate etching rate?

Many thanks!

Sincererly yours,

Liangliang Zhang
------------------------------------------------------------ 

Ph.D. Candidate
School of Electrical Engineering
Stanford University
CA 94305, U.S.

Tel: 01-609-528-4962

M.S.

Institute of Microelectronics,
Peking University

seminar tomorrow: T.W. Clinton (Hitachi Global Storage Technologies)

Please join the Stanford Optical Society for the following seminar presented by TW Clinton of Hitachi Global Storage Technologies. Refreshments will be served at 4:00 PM outside the Nano 232 corridor.

Special Seminar cosponsored by the Stanford Optical Society:

 

A little bit is a big achievement:
overcoming barriers in nano-scale magnetic recording

 

T.W. Clinton

Hitachi Global Storage Technologies, San Jose Research Center

 

 

Thursday, January 20^th, 4:15pm

Refreshments at 4pm

Nano Building 232

 

 

 

                The $100-billion data-storage market is driven by, arguably, the fastest moving technology in high-tech industry, where the nano-scale is commonplace in products.  Not only are bits measured in nanometers, but data rates (> GHz) have driven timescales sub nanosecond.  Over the last decade, in particular, there has been unprecedented acceleration in the development of advanced magnetic recording technologies, from perpendicular to Heat, Microwave and Electrically assisted magnetic recording (HAMR, MAMR and EAMR).  Along the way, there have been numerous physical barriers overcome, while even more daunting tasks lie ahead.  For the magnetics that underpin hard disk drives, in particular, there are many physical barriers we need to overcome as we reduce bit dimensions and increase data rates with each generation of the technology.  For example, smaller bits are more susceptible to thermal agitation, while data rates are limited by the relaxation rates of magnetic excitations.  In this talk, I explore the physics and engineering of shrinking bits and short timescales.

 

Speaker Biography

Tom Clinton holds a doctorate in Physics from the University of Maryland, where his thesis was on magnetic properties of superconductors.  He has worked in the data-storage industry since 1999, spending a decade at Seagate Technology's research division in Pittsburgh, PA, and is currently a member of the research staff at Hitachi's San Jose Research Center.  At Hitachi, he works on advanced storage technology, FIB/SEM applications, and fabrication and characterization of magnetic and optical devices.

--
Lana Lau
Ph.D. candidate
W. E. Moerner Lab
Stanford University

mailing address:
Stanford University
Department of Chemistry
333 Campus Drive #121
mailbox 99
Stanford, CA 94305

Problem p5000etch SNF 2011-01-19 16:54:10: Limits on HBr Usage

HBr will be turned on only during M-F, about 8-4 pm. Please do not use HBr on ChC outside of these times. For gory details, see previous problem report.

Problem p5000etch SNF 2011-01-19 14:52:12: Limits in HBr use in ChC

Dear Lampoly and P5000Etch users --
Thanks for your patience. There are two problems with the HBr supply. First, we are nearly out. A spare bottle has been on order for many weeks and has even shipped, but we do not have an estimated delivery yet (it can be a surprisingly long time because of regulations governing transport of hazardous chemicals). Second, the HBr toxic gas sensor for the gas cylinder has been having problems. The sensor head has been replaced and is under observation, but we cannot run HBr without monitoring.
Until these two problems are resolved, we will allow HBr use only during regular working hours (Monday-Friday, ~8-4) to allow staff to monitor both the remaining HBr supply and the sensor. The HBr bottle will be shut off in the evenings and turned on in the morning. Lampoly will be shutdown in the evenings. A problem message will be posted on p5000etch. We will update Coral as we work to resolve this problems.
Your SNF Staff

Re: Problem p5000etch SNF 2011-01-14 15:50:50: HBr is off line

HBr is back online.

Lost notebook

Dear members,

I lost my notebook in the Lab.
If you found it , Please contact me. my phone number 408 316 9878.

Thanks

Sabrina

Line gratings as masters for soft lithography

Dear labmembers,

Does anyone have 1D grating patterns available that they can lend to
us? We plan to replicate the pattern of the 1D grating master template
with PDMS and use the PDMS stamp for soft lithography, so your grating
pattern will remain intact. The grating period we are looking for is
between 250 nm and 400 nm.

Thanks,
I-Kang

special seminar: Hiro Fujita, 1/20 1215pm. nano tensile testing in TEM and a nano transportation device driven by bio molecular motors

Nano Hand-Eye System for Science and Engineering

Hiroyuki Fujita
Institute of Industrial Science
University of Tokyo
 

 

12:15 pm January 20, 2011

Building 320 Room 105

 

 

In order to enhance scientific knowledge and engineering capability in nano scale, it is crucial to develop manipulation tools, i.e. nano hands, for handling an individual nano object or molecule. The tool must be combined with an advanced characterization method having both single atomic or molecular level sensitivity and simultaneous imaging capability, i.e. nano eyes.

The author and his colleges have intensively investigated MEMS (micro electro mechanical system) design, fabrication and its application to nano and bio technologies. Nano scientific research using MEMS devices covers the tensile testing of nano contacts in transmission electron microscope (TEM) for in situ atomic level observation of deformation, micromachined Brownian motors and MEMS tweezers for capturing and characterizing DNA and other linear molecules electromechanically. MEMS for bio technology includes micromachined fL-chambers and heaters to allow single-molecular level enzymology , and the integration of bio molecular motors in MEMS for direct sorting and transportation of specific sample molecules. In this talk, I will focus on two topics; nano tensile testing in TEM and a nano transportation device driven by bio molecular motors.

 

Problem p5000etch SNF 2011-01-14 15:50:50: HBr is off line

Do not use HBr gas (std ChC Poly etch.)

Memorial Service 1/20 3pm for Rune Nielsen, Memorial Church

Dear Friends

The Microsystems Laboratory and friends of Rune Thode Nielsen will be remembering our dear colleague and friend at a memorial service in Memorial Church at 3pm on Thursday January 20th, 2011. Rune died in a car accident on December 18, 2010 and we lost a shining star that day. Even if you did not know Rune well, I would be very grateful for your support of our lab and his local community, especially since his family cannot travel from Denmark for this service.

We will also celebrate Rune's life at a reception following the service at approximately 4pm in Bechtel International Center. We realize that everyone who met Rune has something wonderful to share about him and his enthusiastic and endearing personality. In advance of the service, we will be collecting pictures, letters, and tributes to Rune to share with each other and his family, more details are available on our webpage at:

http://microsystems.stanford.edu/wiki/In_Celebration_and_Memory_of_Rune

Rune was an international graduate student from Prof. Anja Boisen's laboratory at Denmark Technical University; he was a visiting researcher and active labmember at the Stanford Nanofabrication Facility and in the Microsystems lab since March 2010 as part of his MS program and thesis.  He was an outgoing and amazing individual with a passion to improve the world and a positive attitude and support to share with everyone around him. He will be remembered well and he will be missed. I hope you can join us.

Beth Pruitt

--

Beth Pruitt, Ph.D., P.E.         
Associate Professor
Silas H. Palmer Faculty Fellow Department of Mechanical Engineering
Stanford University
Stanford, CA 94305
group website: http://microsystems.stanford.edu/
email: pruitt@stanford.edu

fax: 650-725-1587

[Reminder] Special Seminar - Dr. Janglin Chen (ITRI Taiwan), Friday Jan.14, 4PM, CISX 101

Special Seminar Presented by the Stanford Optical Society

e-Paper Technology and Future Development

Dr. Janglin Chen

Industrial Technology Research Institute (ITRI) in Taiwan

Friday, January 14, 4:00 PM, CISX 101

Refreshments at 3:45PM

 

Electronic paper (e-Paper) has drawn much attention for its promise to curb the overuse of paper, such as printed matters, and documents, etc.  The one important feature of e-Paper displays is that they do not require backlight to operate, providing a paper-like, power saving, reading experience. Also, their bi-stability enables zero power consumption for still image display.

e-Paper is projected, by many market research firms, to have huge potential in a variety of applications, such as e-Book, POP/e-Signage, shelf labels, and others.  Among them, e-Reader, the first major e-paper product following the launch of Amazon's Kindle in 2007, has caught most fanfare.  Initial products have limited color capability, and are on rigid substrate, such as glass.  Research and development, next, will aim at colorization, refresh-rate enhancement, touch function, and high flexibility, etc.

            To meet the future needs for digital life style and for a 'greener' display panel, ITRI has focused research topics on flexible display technologies.  For digital life, flexible EPD, OLED will address the portability, while flexible touch is to enhance user-friendly interface.  For 'green panel,' large-area, roll-to-roll coatable Ch-LCD will deliver power saving, material and cost advantages.  Meanwhile, flexible substrate and TFT backplane are developed as the basic, enabling technologies to render today's many rigid displays to become flexible.

 

About the speaker

Dr. Janglin (John) Chen is a Vice President of Industrial Technology Research Institute (ITRI) in Taiwan, and the General Director of ITRI's Display Technology Center.  Prior to Joining ITRI, Dr. Chen was a Research Fellow of Eastman Kodak Company in Rochester, New York, where he held many R&D managerial positions from 1982 to 2006, and is the author of sixty technical articles, and 33 issued US Patents.  A native of Taiwan, Dr. Chen holds a Bachelor degree from National Tsing Hua University, Ph.D. degree from Polytechnic University in Brooklyn, New York, and is a graduate of Stanford Executive Program, Gradate School of Business, Stanford University.   In ITRI, Dr. Chen and his staff focus on new display and advanced technology research, including flexible displays, substrates, inorganic and organic TFTs.  Dr. Chen also holds the appointment of Adjunct Professorship with Display Institute of National Chiao-Tung University, and is the Chairman of Taiwan Display Material & Device Association (TDMDA).

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