Wednesday, June 30, 2010

Building Fire Alarm

All,

I believe we are back on line. I turned on all the gases and they should be available. Please watch your processes as I might have missed one.

The alarm was from a faulty smoke detector in CISX. The Stanford alarm shop has replaced the detector and reset our control panel.

Regards,
Ed

Tuesday, June 29, 2010

AFM on protein layers, damp or dry?

Hi,

Does anyone have any experience using the AFM (Xe70 or other) on damp
and dry protein layers? Would love to learn from your experience on
the recommended settings.

Thanks,
-Meredith

--
--------------------------------------------------
Meredith M. Lee
Stanford University
Ph.D. Candidate, Dept. of Electrical Engineering
Center for Integrated Systems
420 Via Ortega, Stanford, CA 94305-4075
Fax: (650) 723-4659
mmlee@stanford.edu

Monday, June 28, 2010

Shutdown p5000etch SNF 2010-06-28 13:13:22: Hard Drive problems continues

Comment p5000etch SNF 2010-06-28 12:16:16: Still there is problem

System constant file access error 70 at location 11. Invalid user file status block.

Re: Shutdown p5000etch SNF 2010-06-27 06:30:22: disk fail?

Tool is back online, I adjusted the 5vdc from 4.89v to 5.01v
and hard reset the tool. Verified recipe and system config
and both check good.

Comment p5000etch SNF 2010-06-28 09:00:47: Update

The system hardrive is not responding, troubleshooting
in progress...

Sunday, June 27, 2010

Shutdown p5000etch SNF 2010-06-27 06:30:22: disk fail?

invalid user file status block / system constant file access error 70 at location xx // also list of process recipes seems empty!

Saturday, June 26, 2010

Process Clinic Monday, June 28, 2 pm

Hi all --

Just a reminder of the Process Clinic, Monday, 2-~3 pm, in the cubicle
area outside Maureen's office. Bring your device sketches, process
questions, runsheets, and mask layouts. Staff and senior labmembers
will be on hand to help brainstorm solutions.

Your SNF Staff

Friday, June 25, 2010

Re: Shutdown p5000etch SNF 2010-06-24 16:21:40: Wafer stuck in Chamber C

Wafer was still on load arm but not being sensed. Vented LL and manually removed wafer. Jim

request for publications, presentations/research highlights

Dear Labmembers:

On behalf of Professors Nishi and Howe, we would appreciate your help gathering the titles of publications and presentations, covering the period of July, 2009 to June 2010, which we are required to report as part of the NSF grant which supports SNF.  Although we recognize that summer can be busy for travel and conferences, could you please send me your list by Friday, August 6th so I will have time to assemble them for submission.

The publications and presentations citations (please separate) should be in the following format, unnumbered separated by a single "return/paragraph mark".  It is important that you provide them to me in the following format.

Publications

Z. Liu, H. A. Becerril, M. E. Roberts, Y. Nishi and Z. Bao, �Experimental Study and Statistical Analysis of Solution-Shearing Processed Organic Transistors Based on an Asymmetric Small-Molecule Semiconductor�, IEEE Trans. on Electron Devices, 56, 176-185 (2009).

Presentations

C. Coper, R. Candler, S. Yoneoka, T. Kenny, R. Howe, and R. Maboudian, �Simultaneous Wafer-Scale Encapsulation and Microstructure Cladding with LPCVD Polycrystalline 3C-SiC", 15th International Conference on Solid-State Actuators & Microsystems, Denver, USA, 2009.

If any of your research have been used a journal cover, highlight that item (and send it if you have it available) so I can include the graphics in our report.

Finally, we are also required to send NSF "research highlights" in the form of a one page powerpoint slides.  Could you use the attached format to describe one or two key accomplishments of your group?

Thank you in advance for your help.

Sincerely,

Paul Rissman



Thursday, June 24, 2010

Shutdown p5000etch SNF 2010-06-24 16:21:40: Wafer stuck in Chamber C

Error message: wafer did not drop on bla\de from Ch. C.
Elmer: please help me take this wafer out. It is a VERY IMPORTANT wafer. So I want it out safely. : ) Thanks!
Sorry for the inconvenience.

Ebeam Hitachi HL-700F Status Update: near perfect stitching and excellent resolution on tool during exposures this week

Greetings All Users and PI's involved with the Hitachi HL-700-F Writer we call 'EBEAM':

Ted Berg and I, along with the support and effective interaction with the Hitachi Instrument Field service organization, have put in an immense and persistent effort working on EBEAM to bring the tools performance back to its systems performance specifications for resolution and write field-to-write field stitching. Over the course of the last three months I have completed thousands of EBL pattern exposures with no problems encountered, including long time and large area writes of Gratings, waveguides and other planar optical devices, and slit filters for Solar Cells on Silicon, Quartz substrates, or small pieces.

During this time we have also completed several User projects on the tool with high quality EBL results.  We are now ready to bring your projects onto the tool for initial set up and testing working either with me individually, or in small groups, to aid in your successful completion of your EBL patterning needs.

I am holding regular 'Open Labs for New Users on Ebeam' on most Mondays and by appointment. Following is my coral EBEAM schedule on the tool for June, July and part of August:

Monday June 28th, 2010 from 2 to 6 PM.
Monday June 12th 2010 from 2 to 6 PM.
Monday June 26th 2010 from 2 to 6 PM.
Monday August 9th 2010 from 2 to 6 PM.
Monday August 23rd 2010 from 2 to 6 PM.

Other User sessions can be scheduled during my daily office hours from 9 - 10 AM on Tuesdays to Fridays.  (There are still a few time slots open for early to mid July on my schedule and most of August remains open at this time.)

This system is available to all lab members in good standing working in the SNF clean room, including Industrial and outside academic Users with no restrictions.  Lots of session time is also currently available to schedule your work on the tool.

To whet your appetite to give the system another try I will give you credit for five hours of FREE EBEAM session time on my dime to assist you in getting started towards your success on the tool. 

The system has a 100 MHz writing speed writing in 2 mm square write fields at 30kV and with 2 - 3 nA of beam current. The system will write features down to 50 nm and mean + three sigma stitching specification is less than 150 nm, typically better than 80 nm on Silicon with 100nm PMMA thin films. Pixel spacing, dose and dose arraying, and laser focus are User addressable making this system a relatively straight forward system to run by any User. GDSII Calma format is preferred file format for conversion to the HL-700F format using CAPROX software package.

Please see or call me during my office hours to get on board and get your projects started here at SNF.

Thank you for your interest in Ebeam Technologies here at the SNF,

James Conway
001-650-725-7075






-------- Original Message --------
Subject: Comment ebeam SNF 2010-06-23 17:41:42: perfect stitching and resolution on tool during exposures this week
Date: Wed, 23 Jun 2010 17:41:42 -0700
From: jwc@snf.stanford.edu
To: ebeam-pcs@snf.stanford.edu


Users: System is in an optimal setting state and ready for your jobs... perfect stitching and resolution on tool during exposures this week! :-) James   

Reminder :: PhD Oral Examination :: Matthew Messana (Today, June 24, 2010, 1:30pm)

Stanford University Ph.D. Oral Examination

Department of Mechanical Engineering

 

Title: Development and Characterization of a Wafer-Scale Packaging Technique for Stable Large Lateral Deflection MEMS

Speaker: Matthew Messana

Advisor: Professor Thomas Kenny

Date: Thursday, June 24th, 2010

Time: 1:30pm (Refreshments and snacks at 1:15pm)

Location: Allen Building (formerly CIS-X) Auditorium, Room 101

 

 

Abstract:

 

Microelectromechanical systems (MEMS) are becoming very popular in our everyday lives. They are showing up more and more in automobiles, cell phones, televisions and many other places. The packaging of these devices is critical to their performance and reliability and must be carefully considered in their overall system design. Due to strict requirements and the fragile nature of these devices, the packaging often represents a significant portion of the total cost of a MEMS product.

 

Stanford University, jointly with Bosch, developed a wafer-scale encapsulation method in which MEMS devices are encapsulated as a part of their fabrication. This process, now used by SiTime, has been dubbed the ‘epi-seal’ process by virtue of its use of an epitaxial silicon reactor to seal the cavities containing the devices. Devices are cleaned in-situ in the epitaxial silicon reactor just prior to sealing, resulting in a package environment that is very clean and stable. Because this is a batch process, the overall packaged device cost is very low. One significant limitation with this process, however, is that devices are limited to small (less than 2µm) trenches, thus prohibiting large displacements and common MEMS structures such as comb drives.

 

In this presentation, I will discuss a method for expanding the design rules of the epi-seal process to include large lateral deflection structures, while still maintaining the desirable qualities of the original process. The method involves fusion bonding a sacrificial wafer to a silicon-on-insulator (SOI) wafer with devices already etched in it. The sacrificial wafer is thinned via grinding and polishing, similar to the fabrication of an SOI. Cavities are vented through the thinned wafer and devices released using HF vapor. Like the epi-seal process, the devices are then cleaned and sealed in the epitaxial silicon reactor. The resulting MEMS are fully encapsulated in single crystal silicon that is suitable for CMOS integration directly above the devices. Many widely varying devices were produced using this process in the Stanford Nanofabrication Facility (SNF) with high yield. I will discuss some of these devices and how we used them to characterize the package.

 

Tuesday, June 22, 2010

Please check if you have taken the wrong mask

Hi labmembers,

I have been tracking down the ASML use history and bothered several users after me to help me find the mask (Thanks to all!). The last person who saw my mask is Linda Ohara, who kindly loaded my mask out of the SMIF box and put it in the lost and found bin in the gowning room last Thursday. However, it's already gone when I realized I lost the mask and checked the bin last Friday. I do notice there is a mask called "FINFET" in the lost and found bin. I'm wondering if you have mixed your mask with mine and took away the wrong mask. If so, please kindly check and change it back. I'll really appreciate your help.

Best,
Jiale

BBQ Event Hosted by Stanford OSA/SPIE, Friday June 25th at 4:00PM (Ginzton Courtyard)

OSA Flyer w Logo.png


Robert Chen
Electrical Engineering Ph.D. Candidate
Harris MBE Group, Stanford University
http://robochen.web.stanford.edu

RTP and ALD status

Hello All,
I am sure some of you are more interested than others so here is a
quick update on new RTP and ALD status. As most of you have observed
there is a flurry of activity around the new tool area. A new bridge has
been constructed, the new RTPs are mostly installed, power for the new
FIJI is in , work on other facilities is moving ahead.We have had a
small hang up with permitting(Stanford is building too many new
buildings so the county is swamped). We are moving as quickly as we can
to complete these projects. Thank you for your patience and
understanding. Ted

Monday, June 21, 2010

Re: Problem p5000etch SNF 2010-06-21 10:59:42: Mainframe MFC 8 high flow fault

put an offsett on cl2 cal.

Problem p5000etch SNF 2010-06-21 10:59:42: Mainframe MFC 8 high flow fault

During Chamber A running at the break thru step

PhD Oral Examination :: Matthew Messana (Thursday, June 24, 2010, 1:30pm)

Stanford University Ph.D. Oral Examination

Department of Mechanical Engineering

 

Title: Development and Characterization of a Wafer-Scale Packaging Technique for Stable Large Lateral Deflection MEMS

Speaker: Matthew Messana

Advisor: Professor Thomas Kenny

Date: Thursday, June 24th, 2010

Time: 1:30pm (Refreshments and snacks at 1:15pm)

Location: Allen Building (formerly CIS-X) Auditorium, Room 101

 

 

Abstract:

 

Microelectromechanical systems (MEMS) are becoming very popular in our everyday lives. They are showing up more and more in automobiles, cell phones, televisions and many other places. The packaging of these devices is critical to their performance and reliability and must be carefully considered in their overall system design. Due to strict requirements and the fragile nature of these devices, the packaging often represents a significant portion of the total cost of a MEMS product.

 

Stanford University, jointly with Bosch, developed a wafer-scale encapsulation method in which MEMS devices are encapsulated as a part of their fabrication. This process, now used by SiTime, has been dubbed the ‘epi-seal’ process by virtue of its use of an epitaxial silicon reactor to seal the cavities containing the devices. Devices are cleaned in-situ in the epitaxial silicon reactor just prior to sealing, resulting in a package environment that is very clean and stable. Because this is a batch process, the overall packaged device cost is very low. One significant limitation with this process, however, is that devices are limited to small (less than 2µm) trenches, thus prohibiting large displacements and common MEMS structures such as comb drives.

 

In this presentation, I will discuss a method for expanding the design rules of the epi-seal process to include large lateral deflection structures, while still maintaining the desirable qualities of the original process. The method involves fusion bonding a sacrificial wafer to a silicon-on-insulator (SOI) wafer with devices already etched in it. The sacrificial wafer is thinned via grinding and polishing, similar to the fabrication of an SOI. Cavities are vented through the thinned wafer and devices released using HF vapor. Like the epi-seal process, the devices are then cleaned and sealed in the epitaxial silicon reactor. The resulting MEMS are fully encapsulated in single crystal silicon that is suitable for CMOS integration directly above the devices. Many widely varying devices were produced using this process in the Stanford Nanofabrication Facility (SNF) with high yield. I will discuss some of these devices and how we used them to characterize the package.

 

Friday, June 18, 2010

Lost Mask

Hi All,
 
I cannot find the ASML mask which I used on Tuesday (06/15) 1am. I forgot to take it out and the next user said he saw the mask in the sniff box and the orange box sitting beside the tool. The mask is called "MILC Diode" and I have my name (Jiale Liang) and cell phone written on the box. I checked the "lost and found", the box under the grand table in the litho area and the area near ASML without luck. Please, if anyone saw it please let me know. I really appreciate it.
 
Thanks,
Jiale 

Disk usage ....

SNF Lab Members:

Once again, disk space is nearly full on our sunrays. It is at 98% and
if that reaches 100% nobody will be happy. Expressed as kB, following
is the list of folks that are currently using over 100 MB of space on
the disk and, as a result, are in the best position to help clean things
out.

If you want to see what your biggest files or directories are, log in to
a sunray and issue the command:

du -sk *

This will give you the summary of usage of either files or directories
at that highest level. If you have a big directory at that level you
can issue the command:

cd a_big_directory

followed by another

du -sk *

To find out the biggest files or subdirectories at that level .... and
can continue to use this approach at a deeper and deeper level. Most of
you consuming large amounts of disk space will find that this is
dominated by a couple of very large files .... and, in some cases,
backup copies of those files.

Please help us out by cleaning out disk space that you do not need ...

Thanks,

John


2014206 maurice
691118 gyama
683744 jwc
417339 gunjim
398906 chen0622
394090 ychai
387494 mvikram
379343 sbiaa
354256 vossough
351956 eenriquez
332442 akhan
312744 true
303535 pnataraj
293667 bchui
293202 zzp
292663 rostam
281780 naiqian
264840 mislam
257096 chongxie
255410 mtan
251069 jtsai
249930 ywidjaja
240674 takuyan
235379 vlordi
224434 kosarb
221097 popomoo
218192 tdo
212576 cmfaulkn
212200 dinhthuc
200426 gladys
199845 mdickey
197735 king
193818 mcvittie
190728 rparsa
188700 renshen
184254 rik
183673 hrleebh
182191 gth
181984 hphan
181505 sigari
181445 faridz
181295 chion
179755 nppatil
178215 ajamo
176546 aeonia
174225 iwjung
169944 liangjl
169014 calarrudo
166899 altug
166428 wanki
166017 dgunning
165304 lindaw
164529 junjun
164296 dkozak
163520 hopcroft
161997 mnakamura
161590 dalyx
159611 mrlin
155948 dlieberm
155238 mmessana
155191 ericp
151297 alsune
151177 mtang
150835 svo
146377 dasgupta
144045 ocakkaya
142124 jjeong1
141970 jleu
139689 mcherry
138912 vilanova
138624 yoavb
137622 sjinpark
137014 ybkim
136331 dton
135831 dniemann
134802 srikantv
134052 jweisse
133340 mccord
132780 junil
132498 sdogbe
131737 tura
131432 yoonjin
131247 ghyrn
131096 masaharu
130505 jennyhu
130284 nharjee
129002 haiwei
128750 kimsangb
127406 maryamzm
127068 karen
126992 jsnapp
126825 muchiao
126797 whlee
126226 rshyam
126041 grupp
125928 erichall
125850 bwacker
124762 ryw
124727 cbellew
124473 oisaadat
123830 zpatel
123466 kghadiri
122812 chienyuc
122256 laurahughes
122030 okilic
119770 till
118055 axiu
117325 haniff
117261 benc
116532 jackson
116523 ylinn
115581 ginel
114956 johana
114837 swalker
114688 wasserbauer
114405 lwchang
114140 dwnam
113847 ahazeghi
113260 malekos
112774 wstonas
112639 jperez
112449 roopalik
112094 stamm
111960 bdai
111606 violetqu
111568 kupnik
111205 slatif
111203 cursive
111123 jcdoll
111014 maynard
110661 jfoster
110082 jasonlin
109694 bob101
109406 patlu
108566 yeh
108369 jerabek
108248 yinliu
107927 pbrink
107661 mcp
107503 shuluc
106744 jhaydon
105994 cdietz
105173 bork
105048 vishal
104599 uli
104587 pponce
104246 dhum
103831 fungus
103575 nmiller
103203 sipark
102573 sgraham
102565 cmcg
102499 mferrier
102364 komadina
101850 nchoksi
101830 kevina1
101432 oliversw
101208 nbastianon
100963 edfei
100869 ludwig
100811 jwillett
100787 nburt

Wednesday, June 16, 2010

Course Announcement: ME420 Applied Electrochemistry

Dear labmembers --  Your fellow labmember, Rainer Fasching, is teaching the following course in Applied Electrochemistry this summer: 
**************************************************** 
  Applied Electrochemistry  ME420 - Syllabus, Summer 2010 
 
The class is an introduction to applied electrochemistry with focus on micro-/nano-scale applications. Basic concepts of physical chemistry are presented, of 
which the fundamentals of electrochemistry are built. Theory of electrochemical methods of energy conversion and material characterization are discussed with 
emphasis on the scaling behaviors. This year electrochemical energy storage devices with main focus on batteries will be discussed 
in class. Journals articles are reviewed within the framework of the course with focus on 
current research and challenges of advanced battery technology.
 
*Classroom:* Hewlett Teaching Center Rm 101
 *Time: * Tuesday and Thursday
 10:00-12:00 AM
 *Instructor: *Rainer Fasching
 Building 530, Room 220
 Tel: 650-723-0084
 Fax: 650-723-5034
 Email: rfasch@stanford.edu <mailto:rfasch@stanford.edu>
 
*Goal of the course: To introduce you to the fundamentals, modern methods, and current 
trends of applied electrochemistry:
 Understand the basic concepts of electrochemistry for energy storage
 Gain familiarity with battery technologies and current trends
 Build confidence and knowledge to deal independently with electrochemical problems
 
 
    

Tuesday, June 15, 2010

Reminder: PhD Oral Examination :: Wesley Smith (Wednesday, June 16th, 2pm)

Stanford University Ph.D. Oral Defense 
Department of Mechanical Engineering

Title: Shear adhesion, friction, and wear at multi-point micro- and nano-scale contacts

Speaker: Wesley Smith
Advisor: Prof. Thomas W. Kenny

Date: Wednesday, June 16th, 2010
Time: 2pm (Refreshments and snacks at 1:45pm)
Location: Allen Building (formerly CIS-X) Auditorium, Room 101

Abstract: 

Building an understanding of the fundamental mechanisms that contribute to adhesion, friction, and wear at the micro- and nano-scales is vitally important to develop reliable micro-devices that involve contacting and sliding surfaces. When dimensions are reduced down to the micro- and nano-scale, the surface area-to-volume ratio increases significantly and surface forces begin to play a dominant role in adhesion and friction.

The complicated and often unreliable behavior of contacting and sliding surfaces has limited their adoption in many microelectromechanical systems (MEMS). This study examines the effects of the contact conditions on the friction forces and wear rate to enhance the current understanding of friction at the small scale and lead to the design of reliable sliding surfaces in MEMS devices.

In this presentation, I will discuss the development of a unique experimental setup where friction forces are solely responsible for the measured motion. Friction is measured between an array of single crystal silicon MEMS probe tips and a flat silicon surface. Contact between the surfaces occurs at AFM-like tips that are located at the end of compliant cantilevers. Friction force results from arrays with varying numbers of tips show that the friction forces depend heavily on the true contact area between two sliding surfaces. This work also takes a careful look at the conditions that affect the wear rate of the tips. Methods such as reducing the contact pressure per tip and allowing mechanical compliance of the contacting surface are shown to minimize the detrimental effects of wear. 

Monday, June 14, 2010

Reminder: EE PhD Oral Examination - Thomas O'Sullivan, Wednesday, June 16, 2010; 10:00am

Stanford University Ph.D. Oral Examination

Title: Implantable fluorescence sensor for continuous molecular
monitoring in live animals

Thomas D. O'Sullivan
Department of Electrical Engineering
Research Advisor: Prof. James S. Harris

Date: Wednesday, June 16th, 2010
Time: 10:00 am (Refreshments 9:45am)
Location: Clark Center Auditorium (below the patio)
http://campus-map.stanford.edu/index.cfm?ID=07-340

Abstract:

Molecular imaging is an established technique used to visualize and
quantify functional information about biological processes in living
systems. Specifically, the ability to image fluorescence is a powerful
tool considering the wealth of fluorescent probes/proteins that are used
in drug discovery and therapeutic evaluation, in studying development
and treatment of cancer, in tracking stem cell growth and proliferation
in small animals. Fluorescence sensing is also an emerging technique for
use in humans.

Current approaches to detect fluorescence in vivo rely on devices which
use bulky instrumentation, generally requiring anesthetized animal
models, and restrict sensing to discrete snapshots in time. Thus, there
is need for continuous, long-term monitoring of fluorescent probes. In
this talk, I present our design and fabrication of a miniaturized
fluorescence sensor for direct implantation which enable continuous and
long-term sensing in freely-moving subjects.

The monolithically-integrated, laser-based sensor incorporates the basic
optical components of a fluorescence system for sensing Cy5.5
fluorescent dye. I will discuss the materials and microfabrication
challenges overcome to achieve the compact integration, as well as the
device sensitivity to in vitro and in vivo concentrations of Cy5.5. I
will present our efforts and the benefits of using the sensor to monitor
the binding kinetics of a molecular probe in cancer tumors and will
demonstrate continuous sensing with the sensor implanted in live mice.

Sunday, June 13, 2010

Re: Problem p5000etch SNF 2010-06-10 15:12:11: Ch.C is down for handling

Adjusted extension pick up by 2 count forward.

Re: Problem p5000etch SNF 2010-06-11 15:14:08: Cl2 MFC unstable in Ch. A

Flowed cl2 for 5 mins w/out problem.

Process Clinic, Monday, June 14, 2 pm

Hi all --

Just a reminder of the Process Clinic, Monday, 2-3 pm, in the cubicle
area outside Maureen's office. Bring your device sketches, process
questions, runsheets, and mask layouts. Staff and senior labmembers
will be on hand to help brainstorm solutions.

Your SNF Staff

Friday, June 11, 2010

Problem p5000etch SNF 2010-06-11 15:14:08: Cl2 MFC unstable in Ch. A

Cl2 MFC was fluctuating quite a bit. Process stopped on 4 wafers and needed to be restarted. Fluctation noticed for 30 sccm set point was: 26-38 sccm.

PhD Oral Examination :: Wesley Smith (Wednesday, June 16th, 2pm)


Stanford University Ph.D. Oral Defense 
Department of Mechanical Engineering

Title: Shear adhesion, friction, and wear at multi-point micro- and nano-scale contacts

Speaker: Wesley Smith
Advisor: Prof. Thomas W. Kenny

Date: Wednesday, June 16th, 2010
Time: 2pm (Refreshments and snacks at 1:45pm)
Location: Allen Building (formerly CIS-X) Auditorium, Room 101

Abstract: 

Building an understanding of the fundamental mechanisms that contribute to adhesion, friction, and wear at the micro- and nano-scales is vitally important to develop reliable micro-devices that involve contacting and sliding surfaces. When dimensions are reduced down to the micro- and nano-scale, the surface area-to-volume ratio increases significantly and surface forces begin to play a dominant role in adhesion and friction.

The complicated and often unreliable behavior of contacting and sliding surfaces has limited their adoption in many microelectromechanical systems (MEMS). This study examines the effects of the contact conditions on the friction forces and wear rate to enhance the current understanding of friction at the small scale and lead to the design of reliable sliding surfaces in MEMS devices.

In this presentation, I will discuss the development of a unique experimental setup where friction forces are solely responsible for the measured motion. Friction is measured between an array of single crystal silicon MEMS probe tips and a flat silicon surface. Contact between the surfaces occurs at AFM-like tips that are located at the end of compliant cantilevers. Friction force results from arrays with varying numbers of tips show that the friction forces depend heavily on the true contact area between two sliding surfaces. This work also takes a careful look at the conditions that affect the wear rate of the tips. Methods such as reducing the contact pressure per tip and allowing mechanical compliance of the contacting surface are shown to minimize the detrimental effects of wear. 

Thursday, June 10, 2010

Problem p5000etch SNF 2010-06-10 15:12:11: Ch.C is down for handling

Wafer did not drop in pocket problem.

Re: Shutdown p5000etch SNF 2010-06-10 13:25:01: wafer did not drop on the blade of chamber C

Cleared the fault. Left user's wafers in the blue cassette. Chamber C is down.

Tomorrow: EE PhD Oral Examination - Yiwen Rong, Friday, June 11, 2010; 2:00 p.m.

 

Stanford University PhD Oral Defense - Department of Electrical Engineering

Speaker: Yiwen Rong

Advisor: James S. Harris

Date: Friday, June 11, 2010

Time: 2:00 p.m.

Location: CIS-X 101

Title: Sillicon-Gemanium Electroabsorption Modulator

 
Optical interconnections between electronics systems have attracted significant attention and development for a number of years because optical links have potential advantages for higher speed, lower power, and interference-immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to where the frontier is now at the chip-to-chip and on-chip levels. Successful, monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems.
 
The quantum-confined Stark effect (QCSE)  is a strong, electric field dependent change in optical absorption that has been observed in several groups of quantum well materials. The QCSE is used extensively for high-speed, low power dissipation optical modulators, for example, in telecommunications, and has also been used in large arrays of low power devices. To this point, most examples of the QCSE have been in III–V semiconductor quantum wells, such as GaAs with AlGaAs barriers , or InGaAs with InP barriers.  While these modulators are all based upon direct bandgap semiconductors, QCSE has been demonstrated in indirect bandgap AlGaAs/AlAs quantum wells and we previously demonstrated the QCSE in Ge quantum wells with SiGe barriers. The group IV quantum well structures are especially interesting as they would enable fully integrated modulators and driver circuits in silicon ICs for telecommunications applications and potentially on-chip communications. With reasonably low-power modulators,
 
In this talk, We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III–V quantum well structures at similar wavelengths. We also designed and fabricated a coplanar high-speed modulator and demonstrated small signal modulation at 35GHz and a 3.125GHz eye diagram. That shows group IV quantum well structure has the potential to build high-speed optical communication components.

Shutdown p5000etch SNF 2010-06-10 13:25:01: wafer did not drop on the blade of chamber C

Tomorrow: University PhD Dissertation Defense of Anika Amir Kinkhabwala


Department of Applied Physics
University PhD Dissertation Defense



Large Single-Molecule Fluorescence Enhancements Produced by Gold Bowtie Nanoantennas


Anika Amir Kinkhabwala

Research Advisor: Professor William E. Moerner
 
11 June 2010 @3:15 p.m.  (Refreshments at 3:00)



Location: Applied Physics Building, Room 200



ABSTRACT
Plasmonic nanoantennas can concentrate light beyond the diffraction limit and create highly enhanced local fields, leading to increased Raman scattering and, in some cases, increased fluorescence from nanoscale emitters. Gold bowtie nanoantennas provide a highly enhancing structure that is more controllable and amenable to integration than other geometries such as sharp metal tips and colloids. We have enhanced a single molecule's fluorescence by a factor of 1,300 by coupling it to a bowtie nanoantenna, ten times higher than previously reported for any other plasmonic structure. Electromagnetic simulations reveal that this enhancement is a result of greatly increased absorption of light as well as a shortened excited state lifetime, leading to enhancement of the intrinsic quantum efficiency by an estimated factor of nine, despite additional non-radiative ohmic losses. Measurements of enhanced single-molecule fluorescence for molecules both in rigid polymers and in solution show that bowtie nanoantennas can be used for high-contrast selection of single nanoemitters in crowded environments.

-- 

TODAY: Special Seminar, Bo Huang (UCSF), 4:15 PM in AP 200

Please join the Stanford Optical Society for the following seminar presented by Prof. Bo Huang of the University of California, San Francisco.  Refreshments will be served at 4:00 PM in the Applied Physics building lobby.

Special Seminar

 

Bo Huang

University of California, San Francisco

 

STORM: Super-Resolution Light Microscopy with Twinkling Molecules

 

Thursday, June 10, 4:15 PM, AP 200.  Refreshments at 4:00

Presented by the Stanford Optical Society

                                                                                                          

Abstract

The ability of fluorescence microscopy to perform noninvasive imaging of live samples with molecular specificity has made it one of the most powerful imaging techniques to study cellular processes. However, the diffraction of light limits the spatial resolution of conventional fluorescence microscopy, leaving many biological structures too small to be observed in detail. To overcome this limit, we have developed the Stochastic Optical Reconstruction Microscopy (STORM) technique. It utilizes the photoswitching of fluorophores to isolate their spatially overlapped images, and single-molecule localization to reconstruct the sample structure with the position of labeled fluorescent probes. We have achieved a 20-30 nm lateral resolution in cellular samples, which is an improvement by more than an order of magnitude over conventional fluorescence microscopy. The incorporation of three-dimensional (3D) single molecule localization further enables 3D STORM of a whole cell with 50-60 nm axial resolution. We have also created photoswitchable fluorophores for multicolor imaging by combinatorial pairing of various activator dyes and reporter dyes. We have demonstrated the ability of STORM to visualize structures unresolvable by conventional fluorescence microscopy, including in vitro reconstituted clathrin-mediated endocytic machinery and synapses in the olfactory system.

 

About our speaker

Tim Day PhotoDr. Bo Huang received his B.S. degree in Chemistry from Peking University in China in 2001. In 2006, he earned his Ph. D. degree in Chemistry at Stanford University under the direction of Dr. Richard N. Zare. After working as a postdoc in Dr. Xiaowei Zhuang’s lab at Harvard University, he joined the faculty of the University of California, San Francisco in 2009 as an Assistant Professor of Pharmaceutical Chemistry and Biochemistry&  Biophysics. Dr. Huang’s research work encompasses the area of bioanalysis, single molecule biophysics and optical microscopy. As a postdoc, he and his colleagues developed the super-resolution microscopy technique of STORM. He is currently interested in using optical methods to probe biological processes at the molecular scale. The awards that Dr. Huang has received include the Stanford Graduate Fellowship, the GE Healthcare and Science Prize for Young Life Scientists, and the Searle Scholar.

 

 

Status of new RTPs

Hello All,
Here is the current status of the new RTAs. Install work should
be completed by the end of the week or early next week. Plans have been
turned in to the county for over a month. We are still waiting for their
responses. Once we get those we need a final inspection. Once we get
that Allwin the vendor can come in and demonstrate process and then i
assume training will begin. It is my understanding that Ed Myers will
be doing the initial training. Hope this helps. ted

Wednesday, June 9, 2010

Applied Physics PhD Oral Examination - Ragip Pala, Tomorrow, June 10, 10:00am

Department of Applied Physics
University PhD Dissertation Defense

Plasmonic Devices Employing Extreme Light Concentration

Ragip Pala

Research Advisor: Professor Mark L. Brongersma

10 June 2010 @10:15 A.M.
(Refreshments 10:00 A.M.)

Location: Allen Building (formerly CIS-X), Room 101


ABSTRACT
The development of integrated electronic and photonic circuits has led to remarkable data processing and transport capabilities that permeate almost every facet of our daily lives. Scaling these devices to smaller and smaller dimensions has enabled faster, more power efficient and inexpensive components but has also brought about a myriad of new challenges. One very important challenge is the growing size mismatch between electronic and photonic components. To overcome this challenge, we will need to develop radically new device technologies that can facilitate information transport between nanoscale components at optical frequencies and form a bridge between the world of nano-electronic and micro-photonics. Plasmonics is an exciting new field of science and technology that aims to exploit the unique optical properties of metallic nanostructures to gain a new level of control over light-matter interactions.  The use of nanometallic (plasmonic) structures may help bridge the size gap between the two technologies and enable an increased synergy between chip-scale electronics and photonics.

In the first part of the presentation I will analyze the performance of a surface plasmon-polariton all-optical switch that combines the unique physical properties of small molecules and metallic (plasmonic) nanostructures. The switch consists of a pair of gratings defined on an aluminum film coated with a thin layer of photochromic (PC) molecules. The first grating couples a signal beam consisting of free space photons to SPPs that interact effectively with the PC molecules. These molecules can reversibly be switched between transparent and absorbing states using a free space optical pump. In the transparent (signal "on") state, the SPPs freely propagate through the molecular layer, and in the absorbing (signal "off") state, the SPPs are strongly attenuated. The second grating serves to decouple the SPPs back into a free space optical beam, enabling measurement of the modulated signal with a far-field detector. We confirm and quantify the switching behavior of the PC molecules by using a surface plasmon resonance spectroscopy. The quantitative experimental and theoretical analysis of the nonvolatile switching behavior guides the design of future nanoscale optically or electrically pumped optical switches.

In the second part of my presentation I will provide a critical assessment of the opportunities for use of plasmonic nanostructures in thin film solar cell technology. Thin-film solar cells have attracted significant attention as they provide a viable pathway towards reduced materials and processing costs. Unfortunately, the materials quality and resulting energy conversion efficiencies of such cells is still limiting their rapid large-scale implementation. The low efficiencies are a direct result of the large mismatch between electronic and photonic length scales in these devices; the absorption depth of light in popular PV semiconductors tends to be longer than the electronic (minority carrier) diffusion length in deposited thin-film materials. As a result, charge extraction from optically thick cells is challenging due to carrier recombination in the bulk of the semiconductor. If light absorption could be improved in ultra-thin layers of active material it would lead directly to lower recombination currents, higher open circuit voltages, and higher conversion efficiencies. In this part of the talk, I will discuss how extreme light concentration ability of plasmonic structures can improve the overall performance of thin film solar cells with broadband absorption enhancements. I will present a combined computational\experimental study aimed at optimizing plasmon-enhanced absorption using periodic and aperiodic metal nanostructure arrays.

Odors from a BBQ

All,

A large BBQ is being held in the CISX patio. While we want everyone
to be conscious of odors in the fab, this could be the source for the
next couple of hours.

Regards,

Re: Comment p5000etch SNF 2010-05-16 12:29:00: Please watch Cl2

archived

Re: Comment p5000etch SNF 2010-05-21 18:42:35: Ch. B DC bias and He leak look good

archived

Comment p5000etch SNF 2010-06-09 11:21:06: Ch C cleans to avoid wafer sticking

Folks,
An in-situ clean and seasoning of the chamber is recommended before you commit your valuable wafer to the etch. Here is the procedure;
Run the recipe CH.C CLEAN for 300s on a blank dummy wafer followed by at least 120s of the recipe you will be using.
This is recommended to clean the clamp fingers and reduce the chance of you wafers sticking to the clamp.

Re: Problem p5000etch SNF 2010-05-03 10:17:02: DC bias on Ch.B

Problem located and repaired- arcing

Re: Comment p5000etch SNF 2010-06-04 15:12:21: Ch.C is Down

Ran a chamber clean. Ran 8 wafers using the poly etch recipe with problems.
I believe the "wafer did not drop in pocket" fault is caused by etch residue build-up on the clamp fingers. Need to run a chamber clean prior to running the actual device wafers. Nancy will write up a procedure for running the chamber clean and re-condition.

Re: Problem p5000etch SNF 2010-06-05 00:00:31: Ch C Down

Thank you for your input

Fwd: [foundryoutreach] The Molecular Foundry Call for Proposals


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Call for User Proposals:  The Molecular Foundry

Call for Proposals Begins:  Monday, June 14, 2010

Submission Deadline:  Thursday, July 15, 2010

Projected Award Date:  Friday, October 4, 2010


Dear Colleagues,

The Molecular Foundry at Lawrence Berkeley National Laboratory (LBNL), a Department of Energy (DOE) national nanoscience user facility, is currently accepting requests for user access to its instruments, capabilities and skilled technical staff from scientists and engineers who are seeking to enhance their own research projects.  Requests from potential users, in the form of web-based standard proposals, must be received not later than July 15, 2010 to be considered in our current semiannual call cycle.

The mission of the LBNL Molecular Foundry is to provide researchers from academic, government and industrial laboratories from around the world access to instruments, materials, technical expertise and training in nanoscience.   Access to the Foundry is free of charge for research that is in the public domain and intended for open publication.  Users wishing to generate as well as maintain confidential information and data will pay a full-cost-recovery rate, but also have greater latitude regarding collaboratively generated intellectual property.

The Molecular Foundry hosts six Facilities focusing on the multidisciplinary development and understanding of "soft" (biological and polymeric) and "hard" (inorganic and microfabricated) nanostructured building blocks and their integration into complex functional assemblies.  These research facilities serve as a particularly valuable resource for users pursuing multidisciplinary research in nanoscience (e.g., physicists interested in learning biological techniques, biologists seeking nanofabrication expertise, experimentalists pursing theoretical studies).  All projects that may benefit from Foundry capabilities are welcome, particularly those which relate to our four research themes and reflect areas of expertise of the Molecular Foundry staff.  The Foundry strongly encourages project submissions that take advantage of our other LBNL user facilities, including the Advanced Light Source, Energy Sciences Network, Joint Genome Institute, the National Energy Research Scientific Center, and the National Center for Electron Microscopy.  The Foundry also maintains agreements with affiliated laboratories that can be requested within your web-based proposal submission.

Prospective users are invited and strongly encouraged to contact Molecular Foundry staff in the respective theme areas to discuss proposal ideas and to learn more about special capabilities of particular interest (visit the "Our Staff" section at the Foundry web site).  We encourage discussion of your proposal's central ideas to ensure the Foundry has appropriate facilities, equipment and staff to perform your requested research.

Decisions reached in this round of proposal submissions will be announced approximately ten weeks after submission deadline; for this call we anticipate a notification date of October 4, 2010.  All approved projects will receive user access and work may begin as soon as scheduled after this notification, having a signed user agreement in place between institutions and completion of EH&S requirements.

For further information, please visit:

The Molecular Foundry Home Page
http://foundry.lbl.gov

The User Program Description
http://foundry.lbl.gov/scientific/index.html

The User Proposal Process
http://foundry.lbl.gov/scientific/Proposal_Process.html

Molecular Foundry Staff Scientists
http://foundry.lbl.gov/about/staff.html

LBNL User Facilities and Affiliated Laboratories
http://foundry.lbl.gov/six/affiliated.html

We look forward to receiving your new proposal.   Should you have any questions regarding this process, please contact the User Program Office by e-mail at foundry@lbl.gov or by telephone at 510-486-4574.

Sincerely,

David A. Bunzow
Molecular Foundry User Program Manager
dabunzow@lbl.gov
510-486-4574 (office)
701-541-2354 (cell)
http://foundry@lbl.gov


--   The Molecular Foundry http://foundry.lbl.gov/ foundry@lbl.gov ph: 510.486.6312  

Monday, June 7, 2010

University PhD Dissertation Defense of Anika Amir Kinkhabwala

Department of Applied Physics
University PhD Dissertation Defense



Large Single-Molecule Fluorescence Enhancements Produced by Gold Bowtie Nanoantennas


Anika Amir Kinkhabwala

Research Advisor: Professor William E. Moerner

Refreshments at 3:00 p.m.

11 June 2010 @ 3:15 p.m.

Location: Applied Physics Building, Room 200



ABSTRACT
Plasmonic nanoantennas can concentrate light beyond the diffraction limit and create highly enhanced local fields, leading to increased Raman scattering and, in some cases, increased fluorescence from nanoscale emitters. Gold bowtie nanoantennas provide a highly enhancing structure that is more controllable and amenable to integration than other geometries such as sharp metal tips and colloids. We have enhanced a single molecule's fluorescence by a factor of 1,300 by coupling it to a bowtie nanoantenna, ten times higher than previously reported for any other plasmonic structure. Electromagnetic simulations reveal that this enhancement is a result of greatly increased absorption of light as well as a shortened excited state lifetime, leading to enhancement of the intrinsic quantum efficiency by an estimated factor of nine, despite additional non-radiative ohmic losses. Measurements of enhanced single-molecule fluorescence for molecules both in rigid polymers and in solution show that bowtie nanoantennas can be used for high-contrast selection of single nanoemitters in crowded environments.

 


EE PhD Oral Examination - Yiwen Rong, Friday, June 11, 2010; 2:00 p.m.

 

Stanford University PhD Oral Defense - Department of Electrical Engineering

Speaker: Yiwen Rong

Advisor: James S. Harris

Date: Friday, June 11, 2010

Time: 2:00 p.m.

Location: CIS-X 101

Title: Sillicon-Gemanium Electroabsorption Modulator

 
Optical interconnections between electronics systems have attracted significant attention and development for a number of years because optical links have potential advantages for higher speed, lower power, and interference-immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to where the frontier is now at the chip-to-chip and on-chip levels. Successful, monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems.
 
The quantum-confined Stark effect (QCSE)  is a strong, electric field dependent change in optical absorption that has been observed in several groups of quantum well materials. The QCSE is used extensively for high-speed, low power dissipation optical modulators, for example, in telecommunications, and has also been used in large arrays of low power devices. To this point, most examples of the QCSE have been in III–V semiconductor quantum wells, such as GaAs with AlGaAs barriers , or InGaAs with InP barriers.  While these modulators are all based upon direct bandgap semiconductors, QCSE has been demonstrated in indirect bandgap AlGaAs/AlAs quantum wells and we previously demonstrated the QCSE in Ge quantum wells with SiGe barriers. The group IV quantum well structures are especially interesting as they would enable fully integrated modulators and driver circuits in silicon ICs for telecommunications applications and potentially on-chip communications. With reasonably low-power modulators,
 
In this talk, We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III–V quantum well structures at similar wavelengths. We also designed and fabricated a coplanar high-speed modulator and demonstrated small signal modulation at 35GHz and a 3.125GHz eye diagram. That shows group IV quantum well structure has the potential to build high-speed optical communication components.

Special Seminar: Bo Huang (UCSF), Thursday 6/10/10, 4:15 PM in AP 200

Please join the Stanford Optical Society for the following seminar presented by Prof. Bo Huang of the University of California, San Francisco.  Refreshments will be served at 4:00 PM in the Applied Physics building lobby.

Special Seminar

 

Bo Huang

University of California, San Francisco

 

STORM: Super-Resolution Light Microscopy with Twinkling Molecules

 

Thursday, June 10, 4:15 PM, AP 200.  Refreshments at 4:00

Presented by the Stanford Optical Society

                                                                                                          

Abstract

The ability of fluorescence microscopy to perform noninvasive imaging of live samples with molecular specificity has made it one of the most powerful imaging techniques to study cellular processes. However, the diffraction of light limits the spatial resolution of conventional fluorescence microscopy, leaving many biological structures too small to be observed in detail. To overcome this limit, we have developed the Stochastic Optical Reconstruction Microscopy (STORM) technique. It utilizes the photoswitching of fluorophores to isolate their spatially overlapped images, and single-molecule localization to reconstruct the sample structure with the position of labeled fluorescent probes. We have achieved a 20-30 nm lateral resolution in cellular samples, which is an improvement by more than an order of magnitude over conventional fluorescence microscopy. The incorporation of three-dimensional (3D) single molecule localization further enables 3D STORM of a whole cell with 50-60 nm axial resolution. We have also created photoswitchable fluorophores for multicolor imaging by combinatorial pairing of various activator dyes and reporter dyes. We have demonstrated the ability of STORM to visualize structures unresolvable by conventional fluorescence microscopy, including in vitro reconstituted clathrin-mediated endocytic machinery and synapses in the olfactory system.

 

About our speaker

Tim Day PhotoDr. Bo Huang received his B.S. degree in Chemistry from Peking University in China in 2001. In 2006, he earned his Ph. D. degree in Chemistry at Stanford University under the direction of Dr. Richard N. Zare. After working as a postdoc in Dr. Xiaowei Zhuang’s lab at Harvard University, he joined the faculty of the University of California, San Francisco in 2009 as an Assistant Professor of Pharmaceutical Chemistry and Biochemistry&  Biophysics. Dr. Huang’s research work encompasses the area of bioanalysis, single molecule biophysics and optical microscopy. As a postdoc, he and his colleagues developed the super-resolution microscopy technique of STORM. He is currently interested in using optical methods to probe biological processes at the molecular scale. The awards that Dr. Huang has received include the Stanford Graduate Fellowship, the GE Healthcare and Science Prize for Young Life Scientists, and the Searle Scholar.

 

 

Cooling water back on .... turning tools back on.

SNF Lab Members:

The work on the process cooling water system has been completed and
process tools are coming back on line. Please keep an eye on specific
tools to see when they are returned to service.

A number of tools are already back in service. Tools with cryopumps
(such as innotec and metallica) will require a regen of their pumps and
will take longer to return to service.

Let us know if you have any questions. Thank you for your continued
support,

John