i'm not sure what you mean by a "well profile". There are problems with CV profiling unless you really understand what you are measuring, which is the free carrier concentration that has a Debye spreading to it. There is a similar problem with SRP, but a bit different since you are removing the material and this is more like differential Hall measurements. I decided to send this to a wider distribution since all of this was unraveled so long ago, only OLD guys like me even remember it. If you are trying to find a "well" with localized doping, you need to correct for this spreading to get the dopant distribution (Kleinfelder paper) and if it's inhomogeneous composition, as in a quantum well, then you need to account for the band discontinuities and their effect on the carrier distribution to get the band picture correct (Kroemer). I have attached a couple of OLD papers describing each issue. I am sure there is CV capability at SNF, but it would not be movable, but I think you can bring your samples here.
Regards,
Jim Harris
On Feb 10, 2011, at 10:44 AM, Segal, Julie wrote:
> Labmembers,
> We would like to use CV-profiling to characterize a well profile in silicon. (We have gotten conflicting results from SRP/SIMS.) Does anyone have a set-up for this that we might be able to borrow? (Capacitance meter with variable bias voltage, software, etc?) Or can you refer us to someone else who might have this capability?
> Thanks!
> - Julie
> !DSPAM:4d5433fa9782096920807!
>
James S. Harris '64
James & Ellenor Chesebrough Professor E-Mail:Harris@snow.stanford.edu
Department of Electrical Engineering http://www-ee.stanford.edu/~harris/
ALLEN Rm 328, 420 Via Palou Mall Ph: (650)723-9775
Stanford, CA 94305-4075 Fax: (650)723-4659
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