To: "labmembers" <labmembers@snf.stanford.edu>, "cuigroupmaillist" <cuigroupmaillist@lists.stanford.edu>, "Melosh Group" <melosh-group@lists.stanford.edu>, "Paul McIntyre" <pcm1@stanford.edu>, "James Harris" <jhharris@stanford.edu>
Cc: "Nicklas Anttu" <nicklas.anttu@ftf.lth.se>
Sent: Friday, August 17, 2012 7:18:57 AM
Subject: Monday - Optical Properties of III-V Nanowire Arrays - McCullough 218 @ 2:30PM-3:00PM
Optical Properties of III-V semiconductor nanowire arrays
Monday, August 20, 2012, 2:30PM~3:00PM, McCullough 218
Abstract
Vertical III-V semiconductor nanowire arrays offer the possibility for highly tunable optical response in opto-electronic applications. In this presentation, I review the strongly diameter dependent absorption of light in InAs nanowire arrays.1 Recent results of a four-fold absorption enhancement by a non-absorbing dielectric shell around the nanowires and the underlying physical mechanism will also be discussed. After that, a method for extracting the nanowire dimensions from measured reflectance spectra is demonstrated for as-grown InP nanowire arrays. Finally, a brief overview of the modeling of nanowire arrays for photovoltaics is given with emphasis on different optical loss mechanisms.
[1] Wu, P. M.; Anttu, N.; Xu, H. Q.; Samuelson, L.; Pistol, M.-E. Nano Letters 2012, 12, 1990.
Biography
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