Optical Properties of III-V semiconductor nanowire arrays
Monday, August 20, 2012, 2:30PM~3:00PM, McCullough 218
Abstract
Vertical III-V semiconductor nanowire arrays offer the possibility for highly tunable optical response in opto-electronic applications. In this presentation, I review the strongly diameter dependent absorption of light in InAs nanowire arrays.1 Recent results of a four-fold absorption enhancement by a non-absorbing dielectric shell around the nanowires and the underlying physical mechanism will also be discussed. After that, a method for extracting the nanowire dimensions from measured reflectance spectra is demonstrated for as-grown InP nanowire arrays. Finally, a brief overview of the modeling of nanowire arrays for photovoltaics is given with emphasis on different optical loss mechanisms.
[1] Wu, P. M.; Anttu, N.; Xu, H. Q.; Samuelson, L.; Pistol, M.-E. Nano Letters 2012, 12, 1990.
Biography
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