Re: Pt and TiN etch qestions

Henry,

I've done Pt etching in MRC and in the ion mill. Here is the Pt recipe I use in mrc (from Mary C.)

Ar=12.5sccm

Press=12.5

RF=100W

etch rate ~10nm/min

I also do TiN etching in both pquest and p5000.

Here is the pquest recipe I use:

BCl3: 40 sccm; Cl2: 10 sccm; Ar: 10 sccm; Pressure: 5 mtorr; ECR power: 500 W; RF power: 60 W.

I need to double check the etch rate but I think it's about 10nm/min as well.

Scott

I etch 500A Pt for 5.5 min, and 1000A Pt for 11:00 min using the following recipe: Ar=12.5 sccm, Press=12.5, RF= 100 watts, PV=660 volts. You will always get redeposition of Pt on side walls of your structure, and a fence where the photo resist was. The redeposition of side walls you can't do anything about but the fence can be avoided by using a PECVD STS SIO2 hardmask of 250A with an 80% OE for 1min 10 seconds using the following recipe O2=2.0 sccm, CHF3=15.0 sccms, press=50, RF=50 watts, PV=360 volts remove photo resist then etch Pt. You don't want to use hardmask if are doing electrical measurements. I have no problems etching Pi. I hop you find this information usefull.

Mary 

On Fri, May 4, 2012 at 2:29 PM, jim kruger <jimkruger@yahoo.com> wrote:

If you wish to try this in PQuest at SNF, I strongly recommend (= insist) that you use 5 mTorr pressure.  10 and above result in a "hard to see" instability that forms a fireball up at the microwave window which has no cooling. 

Higher RF  (100 w?) will etch faster, please record the DC bias.

Please publish any results.

jim

---

From: "zhangll.ime@gmail.com" <zhangll.ime@gmail.com>
To: Henry Hong-Yu Chen <hongyuc@stanford.edu>
Cc: "labmembers@snf.stanford.edu" <labmembers@snf.stanford.edu>
Sent: Friday, May 4, 2012 1:19 PM
Subject: Re: Pt and TiN etch qestions

For Pt RIE etch:

Ar: 40sccm,
Cl2: 40sccm
Pressure: 10mTorr
RF pow 50W
ECR pow 700W
Rate:30nm/min

This recipe works at MIT, but i haven't got a chance to try it in out cleanroom.

Good luck!

Sincerely yours,
Liangliang

On May 4, 2012, at 2:57 PM, Henry Hong-Yu Chen <hongyuc@stanford.edu> wrote:

> Dear Lab Members,
>
> My colleague and I are trying to etch through the following structures
> by dryetch (P5000? PQUEST?). I wonder if anyone can share the
> experience/recipe with us.  Both structure are on the top of very
> thick SiO2.
>
> Top/Bottom => 50nm SiO2 (STS) / 30nm Pt (innotec)
> Top/Bottom => 50nm SiO2 (STS) / 80nm TiN (AJA)
>
> Thanks,
> Henry