"Spreading Resistance Analysis (SRP)"
Speaker - Roger Brennan
Date: Jul 13, Tuesday
Time: 2p - 3p
Cypress Semiconductor Auditorium (Former CISX101 auditorium) Allen Building
Brief Abstract of Presentation:
Using a pair of tiny probe tips, it is usually possible to extract a
resistivity-depth profile in silicon and germanium. Assuming
published values of carrier mobility (derived from single-crystal
material), it is possible to calculate a carrier concentration-depth
profile -- critical for device performance.
SRP had a dynamic range of about 9 decades and can cover the entire
resistivity range in one profile if needed. Of course, as with all
measurement techniques, it has its limitations.
Bio for the speaker - Roger Brennan
While working as a chemist, about two years after earning his BS in
Chemistry (Marshall University, 1963), he became excited about
semiconductor processing. Thirty-six resumes later, he became the
masking engineer for the beginning MOS production effort at Texas
Instruments, Dallas TX. Over the years, he has been a diffusion and
masking engineer working with bipolar, MOS, and MEMS -- both analog
and digital. Late in1979, he discovered Solecon Labs and the
usefulness of their spreading resistance analysis. He joined Solecon
in 1980 as the laboratory manager and served as president from 1992
until retirement in 1997. He returned as a "retread" in 2004 and has
been serving as the applications director.
Maureen Baran
Stanford Nanofabrication Facility
Lab Services Administrator
mbaran@stanford.edu
650-725-3664
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