I have one quick question (hopefully for a quick answer too) about SiN patterning using hot phosphoric acid. As far as I know hot phosphoric acid is for stripping SiN, but if possible, I like to use it to pattern nitride so that I can have good isotropic etch profile. Is it possible to pattern SiN in hot phosphoric acid with SiO2 or some other kind of mask? If you have experiences, please share it. Thank you.
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Hyeun-Su Kim
Mechanical Systems Engineer
Kateeva, Inc. (formerly TJet Tech.)
1430 O'Brien Dr. Suite A
Menlo Park, CA 94025
800-385-7802 x111
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Hyeun-Su Kim
Mechanical Systems Engineer
Kateeva, Inc. (formerly TJet Tech.)
1430 O'Brien Dr. Suite A
Menlo Park, CA 94025
800-385-7802 x111
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