boron doping tube

I am trying to make a boron-doped etch stop in my n-type silicon and want to use the boron pre-dep tube at SNF.

 

I need at least a 1um thick p++ silicon layer with at least a 5e18 concentration there.

 

I can't go higher than 900C due to my device processing constrictions.

 

Can anyone offer any recommendations for time and temp to do this?  Would I need a dope and drive process and if so, how long of a drive?

 

Thanks for any help!!!

 

-Hector