Root cause of burned resist:
- Wafers were intermittently sliding off the electrode during the load cycle resulting in a He leak rate of around 6 sccm.
- Found the backside He flow was turning on before the clamp ring was in the process position.
- Adjusted the clamping speed so that the wafer is fully clamped before the He turns on.
- Ran 25 wafers with no problems. Leak rate was consistently around 1.5 sccm.
- Lowered the backside He fault tolerance from 10 sccm to 3 sccm.
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