Nanosociety Lunch Meeting TODAY @ 12pm, McCullough 115: Topological Insulator Nanoribbons

Stefan Meister (Cui Group) will be presenting his latest research in the field of Nanoelectronics at 12pm in McCullough 115.
Pizza will be served.

Title: Aharonov-Bohm Interference in Topological Insulator Nanoribbons

Abstract: Topological insulators are a new type of materials that are insulating in the bulk and conductive on the surface. They have attracted much attention because the surface electrons exhibit dissipationless and spin-polarized current without a need for strong magnetic fields. These exceptional properties make topological insulators a potential candidate for future electronics and spintronics applications. Since topological insulators have only recently been discovered, there are many open questions and a strong need for synthesis and study of these materials in a research environment. In this talk I will give a brief introduction to topological insulators, and discuss our synthesis of bismuth selenide (Bi2Se3) nanoribbons via the vapor-liquid-solid growth mechanism. When a strong magnetic field is applied parallel to the flow of electric current, these nanoribbons show pronounced Aharonov-Bohm oscillations in their magnetoresistance. The oscillations indicate that the entire surface is covered in 2-dimensional electrons, as expected based on the topological nature of the surface states. Our results suggest that topological insulator nanoribbons are an ideal material for the further study of this exciting new field and for the eventual realization of novel spintronics devices.

Laboratory Experience for Faculty

The NNIN (National Nanotechnology Infrastructure Network) is pleased to announce that we will once again sponsor a program for 5 faculty to do research at one of the 14 NNIN sites, including the Stanford Nanofabrication Facility (SNF), in the summer of 2010 .   This program, known as the Laboratory Experience for Faculty (LEF),  is for faculty from under-represented populations (African-American, Native American, Hispanic, women) or faculty at institutions primarily serving under-represented populations.  Candidates may not be present or past users of SNF, or be Stanford faculty.  Please forward this e-mail to anyone who you feel would be appropriate for this program.

Selected faculty will spend approximately 10 weeks in summer 2010 at one of the NNIN sites, with flexible dates and times, and will have a staff member of the facility as an assigned host.  He/she will be paired with a nanotechnology faculty member at the site with a research project of mutual interest.  This research can be in any of the many different disciplines of "nanoscience" or "nanotechnology".  Since one of the goals is to establish a long term project, to be continued after the summer by the candidate, the research should be initiated from his/her interest.  More information about potential nanoscience/nanotechnology projects can be found at the NNIN and SNF websites:

http://www.nnin.org/

http://snf.stanford.edu/

and the Stanford Nanoscience and Nanotechnology website:

http://soe.stanford.edu/research/nano.html


Each award from NNIN will total $12k per participant to cover travel, a housing allowance (if necessary), and a participant stipend.  In addition, the NNIN site will cover incidental expenses and lab user fees.

If you are interested in working at SNF for the summer doing research of your interest with a Stanford nanotechnology faculty member, and meet the requirements listed above, please contact:

Professor Yoshio Nishi - yoshio.nishi@stanford.edu and
Paul Rissman - rissman@stanford.edu

with a brief description of your research interest no later than Monday, November 16th, 2009.  If we determine this to be a suitable research area, and can identify a Stanford faculty partner, we will then ask you to prepare and submit the following short application:

1. A description of the project's technical scope and statement of interest by the prospective participant (one to two pages).
2. A short CV from the faculty candidate, such as in the NSF required style (two pages).
3. A statement of support from SNF management detailing the specific site commitments to the specific project (one page).

The deadline for application submission to NNIN is December 9th, 2009.  Selection will be based on suitability and potential success of the project.

Sincerely,

Paul Rissman
Deputy Director
Stanford Nanofabrication Facility

Re: Comment p5000etch SNF 2009-10-27 14:33:20: Ch.A and Ch.B are OK

Archived

Re: Problem p5000etch SNF 2009-10-27 14:32:28: Ch.C is down

Adjusted chamber door open and close speed. Also adjusted the wafer lift speed (going from lift to release). Cycled many times without any problems . Also ran 8 wafers using Jim Deep Trench recipe.

Ph.D. Thesis Defense: Matthew Panzer

Stanford University Ph.D. Thesis Defense
Thermal Characterization and Modeling of Nanostructured Materials
Matthew Panzer
Advisor: Prof. Ken Goodson
Department of Mechanical Engineering
 
November 2, 2009, 2-3 PM
Paul G. Allen CISX-101 Auditorium
(Refreshments served at 1:45 PM)
 
Thermal conduction resistances are becoming increasingly complicated as advanced materials, photonics, and electronic devices incorporate more nanostructured features (e.g. carbon nanotubes (CNTs), ultra-thin films, nanoparticles, etc.). The reduced dimensions and large interface densities of nanostructured materials modify the energy transport physics, requiring the development of new thermal models and thermal metrology techniques with deep sub-micron spatial resolution. This work develops and applies ultra-fast (nanosecond thermoreflectance (TR) and picosecond time-domain thermoreflectance (TDTR)) to characterize thermal resistances in carbon nanotube arrays and thin-film materials. In conjunction, this work develops novel models of thermal transport within the nanostructured material and interfaces. 
 
Owing to their high intrinsic thermal conductivities (~3000 W/m/K), aligned arrays of CNTs are promising for use in advanced thermal interface materials. Nanosecond TR data for metal-coated aligned nanotube films show that the thermal resistance of the films is dominated by interfaces due to incomplete CNT-metal contact, and that the thermal resistance of these films can be significantly reduced by varying the metallic composition at the interface. This work presents data for the growth-interface thermal resistance of multiwalled carbon nanotubes measured directly using TDTR with a variable modulation frequency technique. 
 
The thermal properties of hafnium oxide and silicon-rich nitride thin films, which are becoming increasingly incorporated in device and energy conversion materials, can significantly influence local phonon temperatures. TDTR data for these films show that the nanoscale features and microstructure reduce the thermal conductivity compared to bulk.
 
The abrupt changes in geometry at nanostructured interfaces induce phonon confinement, which creates additional contributions to the interface resistance. This work investigates model problems of thermal transport through abrupt junctions between a one-dimensional lattice in contact with a two- and three-dimensional lattice using a Green�s function approach. The model indicates that the thermal resistances due to dimensional mismatch are comparable to those due to material property mismatch effects. The results suggest that engineering an intentional impedance mismatch at a nanostructured interface may enhance the transmission of energy.

PhD Orals - Duygu Kuzum

Interface-Engineered Ge MOSFETs for Future High Performance CMOS Applications

Duygu Kuzum 

Advisor: Professor Krishna Saraswat 

Department of Electrical Engineering 

Wednesday, November 4th, 2009, 10:30 am 

CISX Auditorium 

(Refreshments served at 10:15 am)

Abstract

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, introduction of performance boosters like novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires several critical issues to be implemented in Ge MOS technology. High quality gate dielectric for surface passivation, low parasitic source/drain resistance and performance improvement in Ge NMOS are among the major challenges in realizing Ge CMOS.

Detailed characterization of gate dielectric/channel interface and a deeper understanding of mobility degradation mechanisms are needed to address the Ge NMOS performance problem and to improve PMOS performance. In the first part of the talk, we will present the electrical characterization results on Ge NMOS and PMOS devices fabricated with GeON gate dielectric. Carrier scattering mechanisms are studied through low temperature mobility measurements. For the first time, the effect of substrate crystallographic orientation on inversion electron and hole mobilities is investigated.

Direct formation of a high-k dielectric on Ge has not given good results in the past. A good quality interface layer is required before the deposition of a high-K dielectric. In the second part of the talk, we introduce ozone-oxidation to engineer Ge/insulator interface. Electrical and structural characterizations and stability analysis are carried out and high quality Ge/insulator interface with low interface trap density is demonstrated. Detailed extraction of interface trap density distribution across the bandgap and close to band edges of Ge, using low temperature conductance and capacitance measurements is presented.

Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several different research groups worldwide. In spite of the increasing interest in Ge, the major mechanisms behind poor Ge NMOS performance have not been completely understood yet. In the last part of the talk, we discuss our results on Ge NMOS devices fabricated with the ozone-oxidation and the low temperature S/D activation processes. These devices achieve the highest electron mobility to-date, about 1.5 X of universal Si mobility. Detailed interface characterizations, trapping analyses and gated Hall device measurements are performed to identify the mechanisms behind poor Ge NMOS performance in the past. 

Litho Temperature and Humidity

Hello Labmembers...

Many of you have noticed that environment in the Litho area feels different than usual. This is due to a problem with one if the fans that provides laminair air in the litho area(in the Headway / Laurel aisle ). The facilities group is addressing the problem, but until they get it repaired, it may feel humid and sticky, and there may be a musty odor. The temperature is controlling at 21.0 degrees C.. The humidity ad ASML is 42% and at SVG coaters, it is 50%. This should be fine for processing wafers. However, if you do not feel comfortable in the Litho area due to the environment or the odor, please refrain from working in the area until repairs are completed and systems are working normal. If you have questions or concerns, please contact your SNF staff.

Thanks... Gary

Comment p5000etch SNF 2009-10-27 14:33:20: Ch.A and Ch.B are OK

Problem p5000etch SNF 2009-10-27 14:32:28: Ch.C is down

OK to use Ch.A and Ch.B

Re: Shutdown p5000etch SNF 2009-10-26 08:26:44: multiple carrier arm failures

The clamp intermittently does not stop at the release position during the unload. It keeps going to the process position and hits the robot arm as it exits the chamber. Need to troubleshoot further.

Soldering discrete elements

Hi guys,

 

I am having trouble soldering discrete components (FET in ST343 standard package) to a PCB board, devices die after being soldered. Does anyone have experience soldering small components on a PCB that can help me with this?

 

 

Best,

Arash

 

 

 

----------------------------------------------------------------------------------

Arash Hazeghi

 

PhD Candidate

Stanford Center for Integrated Systems

CIS-X 300, 420 Via Palou Mall,

Stanford, CA 94305

 

phone: +1-650-725-0418

web: http://www.stanford.edu/~ahazeghi

 

Vacuum Wands

Hello All,
Just a reminder to be more careful with the quartz vacuum wands when
returning them to the holders etc.Although it may be hard to believe
these things cost over $125.00 each and we go through a lot of them.
Thanks for you help in keeping our costs down. ted

SiO2 plasma etch recipe selective to tungsten?

Does anyone know a silicon dioxide dry etch process that will not attack tungsten?  I have tried the fluorine based gas process and it etches the tungsten.

 

Thanks for any insight you can provide!!

 

____________________________________

Hector Cavazos

Asylum Research

 

 

Shutdown p5000etch SNF 2009-10-26 08:26:44: multiple carrier arm failures

This occurred 3 times:
when loading into chamber C, there were problems with the encoder in the carrier arm. This occured either transferring to or from the chamber. Each subsequent run resulted in the error popping up quicker.
Was running 60 second Ch.C Poly Etch on dummy wafers

Re: Comment p5000etch SNF 2009-10-02 16:50:29: Etch rate check CH.C

archived

Comment p5000etch SNF 2009-10-23 16:29:27: CH C Etch Rate Qual

Etch rate Poly (POLYEMIT) = 3181A/min
ER PR = 627A/min
Etch rate Ox = 545A/min
ER Single Crystal Si = 2482A/min
Selectivity Poly : PR = 5.1 : 1
Sel Poly : Ox = 5.8 : 1
Sel Poly : Si = 1.3 : 1
Note; after wet clean

Re: Comment p5000etch SNF 2009-09-24 17:18:55: CH B qual after CHF3 change out

archived

Comment p5000etch SNF 2009-10-23 16:14:17: CH B Etch Rate Qual

Etch rate Ox = 3063A/min
ER PR = 1521
ER Nitride = 3024
Selectivity Ox : Nitride = 1.01 : 1
Sel Ox:PR = 2.0 : 1
Sel SiN : PR = 2.0 : 1

Re: Comment p5000etch SNF 2009-10-02 17:02:33: Etch rate check CH A

archived

Comment p5000etch SNF 2009-10-23 16:08:45: CH A Etch Rate Qual

Etch rate Al/Si = 7333A/min
ER PR = 3398A/min
Etch rate Ox = 1240A/min
ER Single crystal Si = 3424
Selectivity Al/Si : PR = 2.2 : 1
Sel Al/Si : Ox = 6.0 : 1
Sel Al/Si : Si = 2.1 : 1

E342 MEMS Seminar - Mon 26th Oct 3:15pm - "MEMS Resonators"

Please forward to interested groups.

E342 Seminar, October 26th, 2009

Title: MEMS Resonators

Speaker: Dr. Paul Hagelin, SiTime

When: 3:15pm - 4:00pm, Monday Oct 26th

Where: Room 101 Y2E2 (Opposite Coupa Cafe)

Abstract:

SiTime Corporation develops MEMS-based silicon timing solutions, addressing
the $5 billion timing market with highly configurable products
spanning the smallest,
thinnest, and likely the most reliable products in the industry.
Incorporated into
many consumer products, SiTime technology can be found in fiber-to-the-home
(FTTH) equipment, computing devices, graphics cards, disk drives, mobile phones
and high capacity SIM cards. The EpiSealTM process for encapsulation of
SiTime's resonators results in reduced resonator footprint, superior
frequency stability,
high yield, and compatibility with standard CMOS packaging.

REMINDER: Tim Day Seminar, TODAY, 4:15 in AP 200

Special Seminar
 
Results and applications of commercialized external cavity quantum cascade lasers (ECqcL™)
 
Tim Day
Founder and CEO/CTO Daylight Solutions
 
Thursday, Oct. 22, 4:15 PM, AP 200.  Refreshments at 4:00
Presented by Stanford Student OSA/SPIE

 

Abstract

External cavity quantum cascade lasers (ECqcL™) are now a commercial reality. This technology allows for the advances in quantum cascade (QC) materials to be realized. Significant advances in higher powers, broader tuning, higher efficiency, broader center wavelength coverage and higher operating temperatures have been made in the ECqcL™ commercial platform. This platform is ideally suited to address applications in the Scientific and OEM sensor markets ranging from gas sensing of complex matrices to condensed phase detection. By providing broad wavelength tunability throughout the mid-IR, these sources have the ability to obtain broadband absorption spectra and analyze complex matrices with high sensitivity and specificity. Integrated sensor embodiments also provide fast acquisition speed while providing turn-key operation. This paper will report on recent progress of the commercial ECqcL™ platform. State-of-the-art performance in terms of wavelength coverage, tuning range and power levels will be discussed.

 

About our speaker

Dr. Timothy Day was one of the four founders of New Focus, Inc. As Chief Technology Officer (CTO) and Senior Vice President, he developed numerous photonics products and was instrumental in growing the business to over $20M/year in revenue, as a private company, selling into photonics research markets. He developed an extensive patent and product portfolio and helped transition the company for a successful public offering in May 2000. Dr. Day contributed to the raising of over $500M through private equity offerings and 2 public offerings. As CTO of the public company, Dr. Day developed technologies and products that grew New Focus to over $40M/qtr in revenue with over 2000 employees in 8 sites worldwide. Dr. Day subsequently helped drive the divestiture of non-core businesses, raising $62M, and eventually sold the company in 2004 to Bookham Technology PLC. Dr. Day has extensive technical knowledge and experience, and is considered an expert in the field of photonics. Dr. Day holds both a B.S. and an M.S. in Physics from San Diego State University and a Ph.D. in Electrical Engineering from Stanford University.

TMAH Si etch selectivity to LTO and Nitride

Hi lab members,

I'm planning an experiment that requires me to etch trenches in Si
handle wafer. I am planning to use LTO or Low stress nitride for the
etch mask. Can someone who has experience with this tell me what etch
rates I should expect for LTO and Low Stress Nitride in the standard
20% TMAH solution at 95-100 degrees C.

Thanks a lot,
Arunanshu

NiCr etchant (NiCr TFN) available?

Hi,

        Could anyone please let me know if SNF has NiCr TFN available?

Thanks.

Kevin

Comment p5000etch SNF 2009-10-21 11:31:13: Ch.A wet clean

Wet cleaned the chamber and replaced wafer clamp fingers.

Re: Problem p5000etch SNF 2009-10-20 14:54:59: Ch. A is down

Ch. A is up. Bled air bubbles out of the coolant line. Ran Ch.A metal timed recipe with no problems.

Re: Problem p5000etch SNF 2009-10-20 11:21:13: Chamber A detected HT EX fault

Bled air out of the coolant line.

Re: Problem p5000etch SNF 2009-10-19 20:42:50: Ch.A Heat Exchanger

Bled air bubble out of the coolant line.

Re: Problem p5000etch SNF 2009-10-19 18:57:36: wafer stuck

Wafer has been un-stuck

MEMS Seminar: Today (Wed. Oct. 21st), 4-5pm in Allen-101X - Scaling Into the NEMS Era

MEMS Seminar Announcement:
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

Today, Wednesday, Oct. 21st, 2009
4:00 – 5:00 pm
Allen-101X (formerly known as CISX-101)

Title:
Scaling Into the NEMS Era

Speaker:
Donovan Lee
Applied Science & Technology Graduate Group
Department of EECS, UC Berkeley

Abstract:
Nanoelectromechanical systems (NEMS) have been proposed to overcome the challenges of energy efficiency in CMOS electronics. Recent advances in NEMS technology have produced electromechanical relays and memories which exhibit ideal switching behavior. Scaling of these devices will improve speed and layout density while presenting challenges in reliability and design. Our group has been developing the technology behind these ultra-efficient NEMS devices. Nanoscale gaps will allow efficient low-voltage operation. Understanding material strain limitations will increase device reliability. Characterization of surface forces will enable optimized device designs. This talk will review our work on processes, scaling theory and measurement techniques as applied to devices for the computational NEMS era.

etching trenches into quartz wafers

Hi all,

Does anybody have any experience with anisotropic etching of trenches or pillars into quartz wafers using one of the plasma etching tools, such as AMTetcher? Any advice/input on process parameters would be appreciated. I'm trying to etch several hundreds of nm to 1 um deep if possible.

Thanks,
Neil Dasgupta

Problem p5000etch SNF 2009-10-20 14:54:59: Ch. A is down

Heat exchanger (80 C) flow is very low. Might be a bad water pump.
Need further troubleshooting. The line to the system is disconnected.
Ch.B and Ch. C are OK to run.

Problem p5000etch SNF 2009-10-20 11:21:13: Chamber A detected HT EX fault

Cannot run the process

DI Water unavailable Thursday, 6:30-7 am

Labmembers:

Thursday morning, 6:30-7 am, there will be maintenance work done on the
DI water system so it will be unavailable during this brief time.
Please do not use the following stations during this time:

wet benches (wbdiff, wbnonmetal, wbsilicide, wbnitride, wbmetal, wbgen2,
wbgeneral, wbmiscres)

svgdev

wafersaw

Problem p5000etch SNF 2009-10-19 20:42:50: Ch.A Heat Exchanger

Ch. A Heat Exchanger says Flow is Low.

Problem p5000etch SNF 2009-10-19 18:57:36: wafer stuck

Student OSA/SPIE Special Seminar: Tim Day. Thurs 10/22, 4:15 PM, in AP 200

Join Stanford Student OSA/SPIE for a special seminar this Thursday 10/22 from Dr. Tim Day!  Seminar at 4:15 in AP 200, with refreshments at 4:00.  See attached flier for details.

Special Seminar
 
Results and applications of commercialized external cavity quantum cascade lasers (ECqcL™)
 
Tim Day
Founder and CEO/CTO Daylight Solutions
 
Thursday, Oct. 22, 4:15 PM, AP 200.  Refreshments at 4:00
Presented by Stanford Student OSA/SPIE

 

Abstract

External cavity quantum cascade lasers (ECqcL™) are now a commercial reality. This technology allows for the advances in quantum cascade (QC) materials to be realized. Significant advances in higher powers, broader tuning, higher efficiency, broader center wavelength coverage and higher operating temperatures have been made in the ECqcL™ commercial platform. This platform is ideally suited to address applications in the Scientific and OEM sensor markets ranging from gas sensing of complex matrices to condensed phase detection. By providing broad wavelength tunability throughout the mid-IR, these sources have the ability to obtain broadband absorption spectra and analyze complex matrices with high sensitivity and specificity. Integrated sensor embodiments also provide fast acquisition speed while providing turn-key operation. This paper will report on recent progress of the commercial ECqcL™ platform. State-of-the-art performance in terms of wavelength coverage, tuning range and power levels will be discussed.

 

About our speaker

Dr. Timothy Day was one of the four founders of New Focus, Inc. As Chief Technology Officer (CTO) and Senior Vice President, he developed numerous photonics products and was instrumental in growing the business to over $20M/year in revenue, as a private company, selling into photonics research markets. He developed an extensive patent and product portfolio and helped transition the company for a successful public offering in May 2000. Dr. Day contributed to the raising of over $500M through private equity offerings and 2 public offerings. As CTO of the public company, Dr. Day developed technologies and products that grew New Focus to over $40M/qtr in revenue with over 2000 employees in 8 sites worldwide. Dr. Day subsequently helped drive the divestiture of non-core businesses, raising $62M, and eventually sold the company in 2004 to Bookham Technology PLC. Dr. Day has extensive technical knowledge and experience, and is considered an expert in the field of photonics. Dr. Day holds both a B.S. and an M.S. in Physics from San Diego State University and a Ph.D. in Electrical Engineering from Stanford University.

Re: Problem p5000etch SNF 2009-10-18 05:01:01: Ch.A MFC 9 (BCl3) flow fault

Did a flow verify and changed correction factort for bcl3
gas from .99 to .97. Also added fomblin oil on chamber C
backing pump.

H2 furnace

Hi,

I was looking for the rf-induction furnace for H2 etching of the sample surface, the temperature of the furnace should be increased over 1600C. Do you know any group which has this kind of furnace on campus or near campus?

I'll appreciate if you share the information about this.

Thanks.

Best,

Sangwon

Process Clinic, 10/19/09

Greetings labmembers --

The next Process Clinic is on Monday, Oct. 19, from 2-4 pm in the cubicle
area outside Maureen's office. Bring your process questions,
process runsheets, and mask layouts. Experienced labmembers are most welcome
to come and help field questions.

Your SNF Staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Problem p5000etch SNF 2009-10-18 05:01:01: Ch.A MFC 9 (BCl3) flow fault

In about half the recipe steps, Ch A throws a MFC9 fault, due to flow too high or not turning off.

Ph.D. Defense: Taek-Soo Kim, Oct. 30, 2009, 1pm

Fracture and Diffusion in Nanoporous Organosilicate Thin films

Taek-Soo Kim
Department of Mechanical Engineering
Advisor: Prof. Reinhold H. Dauskardt

Friday, Oct. 30th, 1:00pm (Refreshments at 12:45pm)
Location: Allen (CIS-X) 101 Auditorium 

ABSTRACT:
Nanoporous organosilicate thin films are attractive candidates for a number of emerging technologies from biotechnology to optics and microelectronics. However, integration of these materials has been challenged by their fragile nature and susceptibility to environmentally assisted cracking as well as anomalous diffusion.  Damage evolution in the form of delamination and cohesive cracking during processes and in-service operation is a principal concern that threatens the reliability and yield of device structures containing these materials.  The objective of this research is to investigate strategies for improving mechanical properties by post-deposition UV curing and optimizing process chemistry to suppress crack growth in nanoporous organosilicate thin films. Diffusion of organic molecules under nanoscale confinement is also investigated.
       
Firstly, it was demonstrated that depth dependent UV curing of organosilicate thin films can occur which has significant implications for the variation of mechanical properties through the film thickness.  An oscillating elastic modulus depth profile following UV cure was measured by force modulation atomic force microscopy (FM-AFM).  The oscillation was associated with UV light interference, which was modeled using a newly developed standing wave equation that accurately predicts the resulting depth dependent cure and includes the film absorption and shrinkage, the reflectivity of the underlying layers, and changes in the film refractive index.  By careful selection of the UV spectrum and the underlying layers, cured film can be produced with selected curing profiles optimized for high adhesion and graded physical properties through the film thickness.
       
Secondly, it was shown that small changes in electrolyte chemistry and surfactant additions in process aqueous environments can have dramatic effects on crack growth rates in the films.  Crack growth rates were sensitive to the type of electrolyte and decreased in the presence of electrolytes that caused crack tip blunting.  Growth rates were also sensitive to nonionic surfactant additions where molecular structure and weight were demonstrated to be important variables.  An optimized blend of surfactants and electrolytes can significantly retard defect evolution due to molecular bridging.  Surfactant self-assembly and resulting molecular bridging were characterized by in situ AFM and used to quantify the molecular bridging observed.
      
Lastly, it was revealed that the mobility of organic molecules when confined at nanometer length scales differs greatly from properties in the bulk.  Unentangled surfactant molecules in the bulk get entangled with adjacent molecules when diffusing through interconnected nanopores in hydrophobic nanoporous organosilicate thin films, exhibiting signatures of reptation.  It was also shown that the conventional mobility/free volume relationship in the bulk explained by the free volume theory of diffusion breaks down for linear alkanes in hydrophobic nanoporous organosilicate thin films.  While alkane mobility decreased with chain length, the activation energy for diffusion decreased and the free volume increased under nanoscale confinement, which is opposite to the trend in the bulk.  The effects of molecular polarity and pore size on diffusion were also demonstrated.  Molecular mobility was found to be suppressed with increasing molecular polarity and decreasing pore size.  

--  Taek-Soo Kim Ph.D. Candidate Dauskardt Group Stanford University http://dauskardt.stanford.edu/people/tkim.html

FW: Free Online AFM Seminars in October

FYI

Yoshio Nishi

 

---

From: Agilent [mailto:mo4@mrs.org]
Sent: Friday, October 16, 2009 11:18 AM
To: nishi@snf.stanford.edu
Subject: Free Online AFM Seminars in October

 

Attend an Atomic Force Microscopy e-Seminar!

 

Agilent Technologies is proud to announce that we will be hosting two new AFM e-Seminars this October. These one-hour live events will be led by some of the most highly esteemed scientists in their respective fields. The unique Agilent e-Seminar format includes an open Q&A session in which all online attendees are welcome to query the presenters.

 

Wednesday, October 21

 

Time:               2:00 p.m. ET

 

First Topic:      AFM Imaging and Chemical Modification of Samples under Controlled Gaseous Environment

 

Presenter:        Dr. Antonio Checco (Brookhaven National Laboratory)

Atomic force microscopy is a unique tool for high-resolution imaging of samples under a wide variety of gaseous and liquid environments. Dr. Checco will present a few examples of sample imaging and chemical modification under inert gases, including: (1) AFM chemical nano-patterning of organic monolayers under controlled humidity and (2) non-contact AFM imaging of nano-droplets of organic solvents condensed on chemical patterns from the saturated vapor.

 

Second Topic: Real Space, Real Time, In Situ: Environmental Application of AFM

 

Presenter:        Dr. Song Xu (Agilent)

 

This presentation focuses on in situ studies of chemical and physical reactions using atomic force microscopy. With full control of the imaging environment (e.g., various gaseous and liquid environments) chemical or physical reactions can be induced and observed with very high resolution. A variety of samples will be presented.

 

Thursday, October 29

 

Time:               2:00 p.m. ET

 

Topic:              Expanding Characterization of Polymer Materials with Atomic Force Microscopy

 

Presenter:        Sergei Magonov, Ph.D. (Agilent)

Recent progress of AFM applications to polymer materials is based on advances in high-resolution imaging, studies in different environments, and compositional mapping of heterogeneous systems. Quantitative measurements of local mechanical and electric properties with AFM-based techniques are under development. High-resolution visualization of surface structures (the primary AFM function) has been proven routine in observations of molecular lattices and single macromolecules. Such studies are applied for conformational analysis of polymer chains, exploration of molecular self-assemblies, and examination of macromolecules’ interactions with different substrates. High-resolution imaging is further improved with recent developments in AFM instrumentation and probes. The interplay between experimental and computer-simulated images is essential for a rational interpretation of AFM data and a better understanding of probe-sample interactions.

 

Join us for one or more of these exciting live events!

 

Register

 

 

Emails such as the above are sent to you as a service directly from the Materials Research Society (MRS); your email address is not distributed to external organizations. If you do not wish to receive messages similar to the above you are welcome to send an email to mo4@mrs.org with "Unsubscribe" as the Subject. Thank you.

MEMS Seminar: Scaling Into the NEMS Era , Wed. Oct. 21st, 4-5pm in Allen-101X

MEMS Seminar Announcement:
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

Wednesday, Oct. 21st, 2009
4:00 – 5:00 pm
Allen-101X (formerly known as CISX-101)

Title:
Scaling Into the NEMS Era

Speaker:
Donovan Lee
Applied Science & Technology Graduate Group
Department of EECS, UC Berkeley

Abstract:
Nanoelectromechanical systems (NEMS) have been proposed to overcome the challenges of energy efficiency in CMOS electronics. Recent advances in NEMS technology have produced electromechanical relays and memories which exhibit ideal switching behavior. Scaling of these devices will improve speed and layout density while presenting challenges in reliability and design. Our group has been developing the technology behind these ultra-efficient NEMS devices. Nanoscale gaps will allow efficient low-voltage operation. Understanding material strain limitations will increase device reliability. Characterization of surface forces will enable optimized device designs. This talk will review our work on processes, scaling theory and measurement techniques as applied to devices for the computational NEMS era.

Venture Clinic, Thursday, Oct. 15, 4:30 pm

Dear Labmembers:

Shahin Farschi of Lux Capital will be hosting the Venture Clinic this
Thursday, Oct. 15, at 4:30 pm, in Allen 101. Here's an opportunity to
learn about the current climate in the venture world or bounce around
any startup ideas you might have. Coffee and snacks provided. Shahin's
contact information is below:

Shahin Farshchi, Ph.D.
Senior Associate
Lux Capital Management, LLC
C: 925.323.2784
http://www.luxcapital.com

FYI - FW: Test of Stanford Emergency AlertSU System & Other Information

-----Original Message-----
From: Marian Naaf
Sent: Tuesday, October 13, 2009 9:36 AM
To: hr-deptmanager@lists.stanford.edu
Subject: Fwd: Test of Stanford Emergency AlertSU System & Other Information

Hello All,

FYI. I am forwarding you this message from the Office of Emergency
Management regarding the emergency AlertSU test that will be conducted on
October 15, 2009.

Marian
--------------------------------------------------------------------------

>
>
>From: Keith A. Perry, Manager, Office of Emergency Management
> Environmental Health & Safety - Stanford University
>
><mailto:kperry@stanford.edu>kperry@stanford.edu
>(650) 725-1409
>http://ehs.stanford.edu
>
>Dear University community member,
>
>On Thursday, October 15th, Stanford University will be conducting a test
>of it's AlertSU campus emergency notification system. The test will take
>place at 12:05 PM. During the test, the University will exercise it's
>multiple emergency communications tools including the newly installed
>Outdoor Warning System, the mass notifications system known as AlertSU,
>our emergency website
>(<http://emergency.stanford.edu>http://emergency.stanford.edu), the
>university emergency hotline (650-725-5555), KZSU 90.1, cable TV network
>and social networking tools, Facebook and Twitter. Members of the Stanford
>community can expect to receive a recored phone message on their contact
>points listed in StanfordYou. Members will also hear the Outdoor Warning
>System as it is activated for the fall system test. The test will include
>an alert tone for approximately 60 seconds followed by a test of the voice
>annunciation capability. If this were a real event, you should stop and
>listen for any announcements, secure your personal safety and seek
>additional information through one of the additional outlets available.
>Emergency management personnel will seek to update the website and hotline
>as the situation allows.
>
>More information about the system is available at
><http://AlertSU.stanford.edu/>http://AlertSU.stanford.edu.
>
>Thursday is also the day chosen to commemorate the 20th Anniversary of the
>Loma Prieta earthquake. The Stanford test will be just a small part of the
>largest earthquake drill in state history. Stanford is using this
>opportunity to remind everyone of the hazard that earthquakes represent.
>There are several ways for you to be better prepared for a significant
>seismic event.
>
>A panel of experts will explore the phenomenon of earthquakes in a free
>and open to the public session on campus Thursday evening.
>
>Commemorating Loma Prieta: The Future of Bay Area Earthquakes
>October 17, 2009 marks the 20th anniversary of the Loma Prieta Earthquake.
>On October 15th, the State of California is conducting the Great
>California Shakeout exercise to raise earthquake awareness. Thursday
>evening a panel of experts will reflect on what happened in 1989, the
>likely impact of future Bay Area earthquakes, progress in earthquake
>science and engineering, how the Bay Area can become more earthquake
>resilient, and earthquake preparedness.
>
>Free and open to the public.
>Call 650.725.4395 for more information.
>October 15, 2009 7:00 - 9:00 P.M.
>Memorial Auditorium
>551 Serra Mall Stanford Campus
><http://pangea.stanford.edu/lomaprieta/>http://pangea.stanford.edu/lomaprie
ta/
>
>Other events scheduled as part of the commemoration can be found listed at
>this website:
><http://bayquakealliance.org/events/#lomaprieta>http://bayquakealliance.org
/events/#lomaprieta
>
>Also, catch the KPIX special "Legacy of Loma Prieta". This is an excellent
>video for anyone who lives in the Bay Area. There are still two airings
>that you can watch.
>
>"Legacy of Loma Prieta," an hour-long special, will air:
>Monday, October 12, 2009 at 6:30p.m.
>Sunday, October 18, 2009 at 2:00p.m.
>Check out the KPIX web site for more information,
><http://cbs5.com/earthquake>http://cbs5.com/earthquake
>
>Check your Personal Emergency Preparedness Kit
>This is an excellent time to check your personal emergency kit at home.
>Make sure any expired items are replaced, refresh your food and water
>supply if necessary, swap out clothes for your children if they have grown
>since you last checked your kit and make sure all your medications are
>current. If you have batteries in your kit, and you probably should, check
>all the batteries to make sure they are still good and replace any that
>have expired.
>
>Don't have a kit at home? Come to one of our Personal Emergency
>Preparedness classes and get started. See the next note for more
information.
>
>For more earthquake preparedness information visit any of these excellent
>emergency preparedness sites:
><http://www.earthquakecountry.info/>http://www.earthquakecountry.info/
><http://www.72hours.org/>http://www.72hours.org
>http://quake.wr.usgs.gov
><http://quake.abag.ca.gov/mapsba.html>http://quake.abag.ca.gov/mapsba.html
>http://www.redcross.org
><http://www.emergency.cdc.gov/>http://www.emergency.cdc.gov
>
> Updated Personal Preparedness class, EHS-5090
>
>EH&S continues to offer a class on personal preparedness for emergencies,
>EHS-5090, once a month. To register for the class, sign up in STARS. The
>new and improved class combines the best of the EH&S training with
>material from the recently discontinued School of Medicine training into
>one comprehensive session. The class is held monthly on Fridays at noon.
>Check STARS for a schedule. Attendees of the class have a choice of
>receiving a starter emergency kit or a comprehensive software package that
>walks an individual through the process of developing their own personal
>plan and collecting all of their critical documents and information that
>can be helpful in any emergency, everything from an earthquake to simply
>losing your wallet.
>
>Feedback or questions may be submitted to
><mailto:preparedness@stanford.edu>preparedness@stanford.edu.
>
>Emery Teranishi
>Employee & Labor Relations
>Phone: (650) 724-7492
>Fax: (650) 736-0669
>E&LR Web site: <http://elr.stanford.edu/>http://elr.stanford.edu
>
>--++**==--++**==--++**==--++**==--++**==--++**==--++**==--++**==
>allregions1 mailing list
>allregions1@lists.stanford.edu
>https://mailman.stanford.edu/mailman/listinfo/allregions1

Marian Naaf, PHR
Sr. Human Resources Manager
School of Engineering
650-723-8145

Re: I am looking for my photolitho mask.

Mario helped me to find the mask! Thank you all!

SangBum

----- Original Message -----
From: "SangBum Kim" <kimsangb@stanford.edu>
To: "labmembers" <labmembers@snf.stanford.edu>
Sent: Monday, October 12, 2009 11:29:44 AM GMT -08:00 US/Canada Pacific
Subject: I am looking for my photolitho mask.

Dear lab members,

I lost my photo-lithography mask. If you could help me to find the mask, I will really appreciate it!

I ordered it from Compugraphics and all the masks from Compugraphics look alike. It is in the red box with white lable on it. (I have attached the photo of those mask boxes.)

It should say *** "Microthermal stage2" or "MTS2" *** as a device name and I think I have written down my name on it. The last time I saw it was June.

Thank you so much for your help!

SangBum

Seminar today, 3:15 - 4:15: On

** 3:15 - 4:15 in Allen 101X ***

The E342 seminar today is from Dr. Omer Oralkan, who is working with
Prof. Pierre Khuri-Yakub on design, fabrication, and applications of MEMS
Ultrasound Arrays.

You'll learn about MEMS for ultra sound and how to make use of
seminar that will give you insight into both MEMS ultra sound technology
and how to use the SNF productively in your research.

Capacitive Micromachined Ultrasonic Transducers: A Platform Technology
for Imaging, Therapy, Sensing, and More

Speaker:
Dr. Omer Oralkan
E. L. Ginzton Laboratory
Stanford University

Abstract:
Historically, piezoelectric materials have dominated ultrasonic
transducer technology. In the last decade capacitive micromachined
ultrasonic transducers (CMUTs) have emerged as an alternative. This
talk will present an overview of the CMUT technology including basic
operating principles, fabrication methods, and application examples
such as medical diagnostic imaging and chemical/biological sensing.

Re: Problem p5000etch SNF 2009-05-28 14:40:04: System intermittently shuts down

System seems to be OK now after the SBC board contacts were cleaned. Still have a problem with the system clock but operation should not be affected.

Re: Problem p5000etch SNF 2009-09-16 01:07:35: BCl3 MFC won't stabilize for chamber A

No problem found. Ran 4 wafers using Ch.A Metal recipe with no problems. BCl3 flow and chamber pressure was stable.

Re: Problem p5000etch SNF 2009-09-16 01:04:38: MFC error on chamber A

No problem found. Ran 4 wafers using Ch.A Metal recipe with no problems. BCl3 flow and chamber pressure was stable.

Re: Comment p5000etch SNF 2009-10-06 19:06:13: Problem Solved

Archived

Re: Comment p5000etch SNF 2009-09-11 17:11:48: chip of wafer broke in chamber B

Cleaned the chamber

Final call for proposals

Call for User Proposals:  The Molecular Foundry

Submission Deadline:  Wednesday, October 14, 2009


Dear Colleagues,

The Molecular Foundry at Lawrence Berkeley National Laboratory (LBNL), a Department of Energy (DOE) national nanoscience user facility, is currently accepting requests for user access to its instruments, capabilities and skilled technical staff from scientists and engineers who are seeking to enhance their own research projects.  Requests from potential users, in the form of web-based proposals, must be received by June 12, 2009 to be considered in this current call.

The mission of LBNL's Molecular Foundry is to provide researchers from academic, government and industrial laboratories from around the world access to instruments, materials, technical expertise and training in nanoscience.  Access to the Foundry is free of charge for research that is in the public domain and intended for open publication.  Users wishing to generate as well as maintain confidential information and data will pay full-cost-recovery rate, but also have greater latitude regarding collaboratively generated intellectual property. 

The Molecular Foundry hosts six Facilities focusing on the multidisciplinary development and understanding of "soft" (biological and polymeric) and "hard" (inorganic and microfabricated) nanostructured building blocks and their integration into complex functional assemblies. These research facilities serve as a particularly valuable resource for users pursuing multidisciplinary research in nanoscience (e.g., physicists interested in learning biological techniques, biologists seeking nanofabrication expertise, experimentalists pursing theoretical studies). All projects that may benefit from Foundry capabilities are welcome, particularly those which relate to our broad research themes and reflecting areas of expertise of the Molecular Foundry staff. The Foundry strongly encourages project submissions that take advantage of our other LBNL user facilities, including the Advanced Light Source, Energy Sciences Network, Joint Genome Institute, the National Energy Research Scientific Center, and the National Center for Electron Microscopy. 

Prospective users are invited and strongly encouraged to contact Molecular Foundry staff in the respective theme areas to discuss proposal ideas and to learn more about special capabilities of particular interest (visit the "Our Scientists" section at the Foundry web site). We encourage the discussion of your proposal's central ideas to ensure the Foundry has the appropriate facilities, equipment and staff to perform your requested research.  Decisions reached in this round of proposal submission will be announced approximately eight weeks after submission deadline.  Approved projects will receive user access and work can begin as soon as possible after this notification. 

For further information, please visit:

The User Program

http://foundry.lbl.gov/user_program/index_user.html

Molecular Foundry Staff Scientists
http://foundry.lbl.gov/people/2_scientific_staff.html

LBNL User Facilities
http://foundry.lbl.gov/science/index_science.html


We look forward to receiving your new proposal.  Should you have any questions regarding this process, please contact us at foundry@lbl.gov or by phone at 510-486-7493.
Sincerely,
The Molecular Foundry

--   The Molecular Foundry http://foundry.lbl.gov/ foundry@lbl.gov ph: 510.486.6312  

micro neural probe seminar today 415pm

Yu-Chong Tai, Ph.D.
Prof. of EE, ME and BE, Division of Engineering and Applied Science
California Institute of Technology
http://mc.stanford.edu/Micro_Neural_Implants

Thursday October 8, 4:15pm
Bldg 200 Room 205
http://mc.stanford.edu/cgi-bin/images/c/cc/200_205.png

Micro Neural Implants

Neurons, once severely damaged, do not repair or regenerate
themselves, leaving permanent debilitating deficits for tens of
millions of people worldwide. As stem cell therapy is yet proven,
implant technologies to interface intact tissues and/or replace
defective functions continues to be the main solution for many neural
diseases. As our society is facing more severe population aging
problems, significant growth in neural implants is predicted. One
should know, however, that even commercially successful implants
still have a lot of room for improvement. For example, cardiovascular
and cochlear implants are still bulky, mechanically rigid, power
hungry, and functionally limited for delicate and small organs. For
example, retinal implant, a major research forefront after pacemakers
and cochlear implants, demands large number of electrodes and
extremely small size beyond the current technology. This talk will
then discuss our research experience on the next generation micro
neural implants to cover applications for cortical, retinal, and
spinal use. The focus is to apply micro/nanotechnology to develop a
new generation of miniature, flexible and highly functional neural
implants. Many interesting issues related to materials, technology
and biology will be discussed.

Re: technical information on PRX-127 / MF-26A

SangBum,

See attachment. Jim

On Thu, 8 Oct 2009, SangBum Kim wrote:

> Dear lab members,
>
> I sometimes find it useful to read technical information sheets before using chemicals.
>
> I ran a search on PRX-127 and MF-26A but could not find any. Does anyone know where I can find some information about them?
>
> For example, PRS-1000 can be found here. http://www.mallbaker.com/micro/documents/performance/bakerprs1000_tpn.pdf
>
> Thanks,
> SangBum
>

--
--------------------------------------------------------------
James (Jim) P. McVittie, Ph.D. Sr. Research Scientist
Paul G. Allen Building Electrical Engineering
Stanford Nanofabrication Facility jmcvittie@stanford.edu
Stanford University Office: (650) 725-3640
Rm. 336X, 330 Serra Mall Lab: (650) 721-6834
Stanford, CA 94305-4075 Fax: (650) 723-4659

technical information on PRX-127 / MF-26A

Dear lab members,

I sometimes find it useful to read technical information sheets before using chemicals.

I ran a search on PRX-127 and MF-26A but could not find any. Does anyone know where I can find some information about them?

For example, PRS-1000 can be found here. http://www.mallbaker.com/micro/documents/performance/bakerprs1000_tpn.pdf

Thanks,
SangBum

Re: Problem p5000etch SNF 2009-10-06 10:53:09: Endpoint Detection Problems

Wafer patterned thermocouples

Dear lab members,

I'm interested in finding micron-scale dissimilar metal junctions for
use as thermocouples, preferably a pattern on a substrate as opposed
to a more conventional wire. Are there any commercially available
solutions?

Thanks,

Patrick

CAD Room Desktop update

Greetings labmembers --

Just an update on the desktops in the CAD room. The hard drive on the
right-side desktop crashed and has now been replaced. These are shared
systems, so everyone is backing up their own files, right? Well,
although I'm sure everyone is backed up, Eric Wheeler (who's helping us
out on desktop support) was able to retrieve the .tdb files to the CD on
top of the computer. Both desktops are updated to Tanner LEdit version
14.11. The left-side desktop also has the MEMS version of LEdit (with
DXF import/export capability), LinkCAD (for translating between
different file formats), and the stand-alone Woollam package.

Your SNF staff

Missing Dell pc power supply

Hello all,

            TEL field service is here working on replacing the broken heater and accidentally left the power supply for his pc on the tool andthis morning it is missing. If anyone accidentally picked it up it would be deeply appreciated if it could be returned to the TEL area. Thanks,ted

           

processing ultra-thin wafers (~50 um)

Hi all,

Does anybody have experience processing thin wafers (~50 um thick) at
SNF? If you have processed them at SNF (or any other fab) before,
would you mind if I ask a few questions?

Thank you,

Alvin

Comment p5000etch SNF 2009-10-06 19:06:13: Problem Solved

The etch recipe did not have "external endpoint" selected- the endpoint detection does not work without this. After changing to this, everything worked.

Seminar Announcement: YC Tai from CalTech

Mechanics & Computation ME395 Seminar In Solid Mechanics

Fall 2009

 

Micro Neural Implants

 

Yu-Chong Tai

Prof. of EE, ME and BE, Division of Engineering and Applied Science

California Institute of Technology

 

4:15 PM October 8, 2009

Building 200 Room 205

 

 

 

Neurons, once severely damaged, do not repair or regenerate themselves, leaving permanent debilitating deficits for tens of millions of people worldwide. As stem cell therapy is yet proven, implant technologies to interface intact tissues and/or replace defective functions continues to be the main solution for many neural diseases. As our society is facing more severe population aging problems, significant growth in neural implants is predicted. One should know, however, that even commercially successful implants still have a lot of room for improvement. For example, cardiovascular and cochlear implants are still bulky, mechanically rigid, power hungry, and functionally limited for delicate and small organs. For example, retinal implant, a major research forefront after pacemakers and cochlear implants, demands large number of electrodes and extremely small size beyond the current technology. This talk will then discuss our research experience on the next generation micro neural implants to cover applications for cortical, retinal, and spinal use. The focus is to apply micro/nanotechnology to develop a new generation of miniature, flexible and highly functional neural implants. Many interesting issues related to materials, technology and biology will be discussed.Retrieved from "http://mc.stanford.edu/Prospects_for_Nanocrystalline_Metals_and_Alloys"

 

 

Problem p5000etch SNF 2009-10-06 10:53:09: Endpoint Detection Problems

Changed su_ox_lg.alg to match recipe in Ch. B notebook. When RF turn on, a message stating "B: - Step Code is Zero" appeared. No trace appeared.

Re: Shutdown p5000etch SNF 2009-10-05 12:44:48: Noisy computer fan

Replaced a fan in the system computer fan pack.

Shutdown p5000etch SNF 2009-10-05 12:44:48: Noisy computer fan

System's computer cooling fans are noisy and are currently being replaced.

Plas Appl Gp Meeting October 8, 2009

NCCAVS PLASMA APPLICATIONS GROUP
**Formerly: PLASMA ETCH USERS GROUP**

(www.avsusergroups.org)

FREE ADMISSION-No need to register, just show up!!

Topic: Plasma-Assisted Surface Modification Processes

Date: October 8, 2009
EARLY Start Time: 1:30 - 5:00 pm

Location: SEMI Global Headquarters

Seminar rooms 1 & 2
3081 Zanker Road
San Jose, CA 95134
**Park in front or behind the
vacant building across from SEMI**

Co-Chairs: Lucia Feng, LMFENG@earthlink.net
Paul Werbaneth, pwerbane@tegal.com

AGENDA:
1:30 - 1:35 Welcome

1:35 - 2:05 "Diversification into adjacent thin film and surface
preparation equipment markets", Risto Puhakka, VLSI Research,
rjp@vlsiresearch.com

Abstract: The presentation focuses on the benefits that equipment
companies can achieve from diversification into adjacent surface
preparation and thin film equipment markets. Data about the counter
cyclical behavior of semiconductor, display, solar, MEMS and other
markets are presented. Additionally the presentation explores surface
preparation and thin film beyond classic applications.

Biography: As President of VLSI Research Inc, Risto Puhakka has
responsibility for subscription services, sales, marketing, and business
development. Mr. Puhakka oversees and contributes to ongoing research
projects and also spearheads product launches. He manages VLSI's advisory
activities and regularly supplies advice and analysis to leading companies
in the chip making industry, the financial community, the press, as well
as various government agencies. Joining VLSI in 1995, Mr. Puhakka has
been an important contributor to VLSI's success. Starting as a senior
analyst in Chip Making Markets, he has expanded his role through all
critical positions within the company. He has served as Vice President
since 1998. Mr. Puhakka's prior experience includes sales, marketing, and
engineering activities with a global capital equipment manufacturer in
Finland . He has earned his MBA from UC Berkeley and MS in Mining and
Process Engineering from Helsinki University of Technology in Finland.

2:05 - 2:35 "Non-thermal atmospheric pressure plasmas for biomedical
and dental disinfection", Professor Chunqi Jiang, Department of
Electrical Engineering - Electrophysics, University of Southern
California, chunqi@usc.edu

Abstract: Non-equilibrium atmospheric-pressure plasma has emerged as a
novel technology for biomedical, dental and environmental applications.
Different types of plasma sources for the generation of
atmospheric-pressure plasmas and their application in biomedical fields
are reviewed. Particular attention will be paid to pencil or needle-like
plasma plumes, generated with nanosecond pulsed plasma sources. The
observed plasma-mediated germicidal effects against microbial biofilms
imply promising applications of the cold plasma for root canal and wound
disinfection. Possible plasma bactericidal mechanisms including
oxidation with reactive chemical species (O, O3, OH, etc.), surface
detachment, electrostatic disruption, and UV radiation are discussed.

Biography: Chunqi Jiang received a B.S. degree in Electrical
Engineering from Changchun Institute of Optics and Fine Mechanics,
Changchun, China, in 1995, a M.S. degree from the University of
Electronic Science and Technology of China, Chengdu, China, in 1998, and
a Ph.D. degree from Old Dominion University, Norfolk, VA, in 2002. She
then joined the pulsed power research group at the University of
Southern California as a postdoctoral research associate. After working
in a research-oriented startup company, she returned to USC and was
appointed a research assistant professor in 2008. Her research interests
include high power, high voltage plasma switches and
atmospheric-pressure plasmas for biomedical applications. She has served
as a technical program committee member for the IEEE International Power
Modulator Conference, an overseas attendance chair for the IEEE
International Power Modulator and High Voltage Conference, and a guest
editor for the IEEE Transactions on Dielectrics and Electrical
Insulation. She was elected to IEEE senior membership in June of 2009.

2:35 - 3:05 "Super-Hydrophobic films With Sequential Surface
Modifications", Jeff Chinn, Integrated Surface Technologies,
jeff@insurftech.com

Abstract: Surface modification with a super-hydrophobic film has been
of interest for many commercial and military applications to overcome
failures and issues arising from water damage in unwanted places.
Traditional super-hydrophobic coatings are created by either roughening
the surface or by depositing a material with nanoscale roughness which
is subsequently modified with a low surface energy self-assembling
monolayer. The engineering challenge is the durability of the film
while the commercial challenge has been to engineer surface attributes
with an economical technique. We present a durability-improved
nano-composite super-hydrophobic film created using sequential surface
reactions. Current applications include printed circuit boards for
water-safe electronics in all environments.

Biography: Jeff Chinn, Ph.D. is the CTO and Founder of Integrated
Surface Technologies (www.InSurfTech.com), a supplier of surface
engineering tools for MEMS, Bio-tech and industrial applications. Prior
to founding InSurfTech, he was CEO and founder of Applied
MicroStructures (AMST). Dr. Chinn has over 25 years experience in
semiconductor processing and manufacturing and held technical management
positions at Applied Materials, Siliconix, IDT, Cypress and Fairchild
Semi during his career. Dr. Chinn received his doctorate from Cornell
University and has over 50 issued patents.

3:05 - 3:30 Break/Networking

3:30-4:00 "Surface Treatment of Materials with Atmospheric Pressure
Plasmas", Dr. Robert F. Hicks, Surfx Technologies LLC,
hicks@surfxtechnologies.com

Abstract: In this presentation, I will review our recent work on the
surface treatment of materials with atmospheric pressure, radio
frequency plasmas. A description will be given of the engineering
design, physics and chemistry of these novel plasma devices. Then we
will examine several applications, including the activation of polymer
surfaces for enhanced adhesion, the oxidation and passivation of
silicon, and the atmospheric plasma-enhanced chemical vapor deposition
of thin films.

Biography: Robert F. Hicks is the President of Surfx Technologies LLC,
a company that sells atmospheric pressure plasma tools for high-speed
surface treatment. He is also a Full Professor of Chemical and
Biomolecular Engineering and Materials Science and Engineering at the
University of California, Los Angeles. Robert received his B.S. and
Ph.D. degrees in chemical engineering from the University of Delaware in
1977 and the University of California, Berkeley, in 1984. He founded
Surfx Technologies in 1999, and he has been a faculty member at UCLA
since 1985. His research interests are in the physics, chemistry and
engineering of materials. Bob has authored over 170 scientific papers
throughout his career. He is a member of the AVS, TMS and AIChE. In
2001, he was elected Fellow of the American Vacuum Society. In 1999, he
received an R&D 100 Award for co-invention of the atmospheric pressure
plasma jet. Bob has been voted Professor of the Year, by the UCLA
chemical engineering students in 1993, 1995, 1999, 2001, 2002, 2006 and
2008.

4:00 - 4:30 "Advanced Plasma Treatments to Improve 4 Semiconductor
Device Packaging Applications: Die Attach, Wire Bonding, Mold &
Encapsulation, and Flip Chip Underfill", Scott D. Szymanski, March
Plasma Systems, sszymanski@marchplasma.com

Abstract: Advanced Semiconductor Packaging and Assembly (ASPA) is a
rapidly growing technology field, as the need for more and more advanced
packaged devices increases to meet new demands: in smart phones, game
consoles, laptop personal computers & netbooks, automotive applications,
wireless applications, medical & live science device applications, and
for many other markets. Accordingly, advanced plasma treatments have
been developed in order to improve many IC device/semiconductor
packaging applications. This talk will focus on four of the most common
(and important) device packaging and assembly applications, and how
advanced plasma treatments can improve them. Specifically, we will
discuss how advanced plasma treatments can be used (1) to improve the
bonding strength and reliability of the die attach step, (2) to increase
the strength and reliability of wire bonds, (3) to improve the adhesion
of mold & encapsulation material to the device in order to decrease
delamination, and (4) to increase fillet height on all sides of the die,
improve fillet uniformity around the die, improve underfill liquid flow
speeds under the die, and decrease voids under the die for flip chip
devices.

Biography: As the Global Marketing Manager for March Plasma Systems,
Scott D. Szymanski works to expand strategic customer alliances,
strengthen partnerships with technology suppliers, and develop future
product offerings tailored to March's target markets. He holds a B.S.
degree in Mechanical Engineering from UCLA, and an M.B.A. He has over
15 years of industry experience working for semiconductor equipment
companies in and around Silicon Valley.

4:30-5:00 Networking

**********************************************************

Corporate Sponsorship Opportunities available at NCCAVS User Group
Meetings!
For details please visit www.avsusergroups.org
<http://www.avsusergroups.org/> or contact Heather Korff, NCCAVS
Office,
530-896-0477, heather@avs.org.

**********************************************************

2009 PAG/PEUG Meeting Schedule: (www.avsusergroups.org
<http://www.avsusergroups.org/> - Dates subject to change)

November 8-13-AVS 56th International Symposium & Exhibition, San Jose,
CA. For details visit www.avs.org <http://www.avs.org/>

December 9-BEOL Integration, submit abstracts to Co-Chairs:
Brett Cruden, Roc Blumenthal, and Kapila Wijekoon; bcruden@arc.nasa.gov,
roc@rocsolidsoln.com, kapila.wijekoon@amat.com

2010 PAG January - June schedule also available, www.avsusergroups.org.

**********************************************************

NCCAVS User Group website: www.avsusergroups.org
<http://www.avsusergroups.org/>

Find: Meeting Schedules, Announcements, Call for Papers, Committee
Contact Information, Proceedings from monthly meetings, and more.

Sign up for a User Group: www.avsusergroups.org
<http://www.avsusergroups.org/>

***********************************************************

Special Process Clinic, Monday, 10/5, 2-4 pm

Greetings labmembers --

The next Process Clinic is on Monday, Oct. 5, from 2-4 pm in the cubicle
area outside Maureen's office. In addition to the usual Staff, we'll
have also two experts on hand to answer questions about lithography and
maskmaking: Keith Best, the local ASML process application expert, and
Bill Martin, our Compugraphics Masks rep. Bring your process questions,
process runsheets, and mask layouts.

Your SNF Staff

Comment p5000etch SNF 2009-10-02 17:02:33: Etch rate check CH A

Etch rate Al/Si = 7320A/min
ER PR = 3224A/min
Etch rate Ox = 1306A/min
Selectivity Poly : PR = 2.3 : 1
Sel Poly : Ox = 5.6 : 1

Comment p5000etch SNF 2009-10-02 16:50:29: Etch rate check CH.C

Etch rate Poly (POLYEMIT) = 2819A/min
ER PR = 559A/min
Etch rate Ox = 447A/min
Selectivity Poly : PR = 5 : 1
Sel Poly : Ox = 6.3 : 1

Re: Comment p5000etch SNF 2009-07-27 01:03:15: Ch.C etch rate

Check completed- see comments.

Why vinyl gloves are bad for your wafers

Dear labmembers:

It has come to our attention that some labmembers are touching wafers with gloved hands  instead of using tweezers or vacuum wands at “clean” stations, such as furnaces and wet  benches.  Although there may be special circumstances where manual handling is warranted,  this violates all known standards of good clean room practices.  This is no-gloves-on-wafers  policy as was stated firmly in this labmembers' note from 2001:   

http://snf.stanford.edu/cgi-bin/ezmlm-cgi?mss:147:ebffjnejjanhflmfgmjp

In this lab, vinyl gloves from the bag are "clean" for using wafer handling tools.  The gloves  we use are certified Class 1 so don't shed particles and are metal ion-free.  So, these are good  for handling cassettes, handles, wands, tweezers and other wafer handling tools for which  we want to avoid cross-contact with other surfaces. Certainly, as anyone can see from the  acid-etched buttons at any wet station, we are not as diligent as we should be with our glove  hygiene.  So, we encourage frequent glove changes in order to ensure that contaminants  don't travel from one surface to another.  

However, vinyl is polyvinyl chloride, or PVC, which is a hard, brittle material.  To make it  flexible, plasticizers are added -- up to 35-45% by weight in gloves.  Plasticizers are low molecular  weight (<400), oily materials.  DEHP or DOP is the most common in cleanroom vinyl gloves.   It is widely recognized in the cleanroom industry that vinyl gloves will leave a trace plasticizer  residue on contact with surfaces (see page 270 of  Cleanroom Technology: Fundamentals of  Design, Testing, and Operation, available on Google books at  http://books.google.com/books?id=-ufEtmr1sBgC&printsec=frontcover&source=gbs_navlinks_s#v=onepage&q=&f=false)

Here is a simple demonstration.  A vinyl glove was pressed firmly down on 1/2 of a clean  silicon wafer and then removed.  Then, contact angle measurements were made.  On the  bare silicon half, contact angles were too low to measure (<5 degrees), indicating very  good wetting with the native surface oxide.  On the other half, the average contact angle  was 19 degrees (stdev=2 degrees), indicating a significant change in the surface energy.   The wafer was then run three times through lampoly, using recipe #1 (60” main etch, silicon  to resist selectivity ~ 3.6.) As can be seen in this photo, glove residue masks the etch.   (The small, aligned dots show where the contact angle was measured.)

Granted, this was a simple and crude demonstration. For a more rigorous approach, see  the attached paper describing effects of DOP plasticizer on electronic device performance.

Please understand that there is generally a good technical rationale behind our lab policies  -- similar no-gloves-touching-wafers policies for CMOS-clean stations exist at the Berkeley,  MIT, and Cornell cleanrooms.  We trust that these should be convincing reasons as to  why we should not use gloved hands to touch wafers.

Your SNF staff