We ran three wafers (one bare Si, one 1000A themal ox and one 3612 on bare Si) for 60 secs using CH A MEATAL. We then ran them through the surfscan. First off, the oxide wafer overloaded the tool. We think this may be due to surface roughness- the etch did not completely remove the oxide.
But the other two showed very few particles. Most are in the 2-10um range. The blank wafer was the worst with 1185. A control wafer showed 37.
So some particles may be generated during the etch, but not nearly to the degree we observed a couple of weeks ago.
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