Stanford University Oral Defense - Department of Electrical Engineering
Speaker: H. Y. Serene Koh
Advisor: Prof. James D. PlummerDate: Friday, May 13, 2011
Time: 9.30am (Refreshments served at 9.15am)
Location: Allen Auditorium (CIS-X Auditorium)
Title: Rapid Melt Growth of Silicon Germanium
Abstract:
Silicon has made modern integrated circuit technology possible. As MOSFET gate lengths are scaled to 22nm and beyond, it has become apparent that new materials must be introduced to the silicon-based CMOS process for improved performance and functionality.
This presentation first discusses Band-to-Band Tunneling (BTBT) transistors, which have the potential for steeper subthreshold slopes than conventional MOSFETs. It is clear that these devices must be fabricated in materials with smaller bandgaps for improved performance. SiGe is one possible material system that could be used to fabricate enhanced BTBT transistors. The development of process for obtaining SiGe-on-insulator from bulk Si substrates through Rapid Melt Growth (RMG) will be presented. RMG is a technique that has been used to recrystallize materials on Si substrates. RMG, however, has not previously been applied to SiGe, a binary alloy with large separation in the liquidus-solidus curve its phase diagram.
This presentation first discusses Band-to-Band Tunneling (BTBT) transistors, which have the potential for steeper subthreshold slopes than conventional MOSFETs. It is clear that these devices must be fabricated in materials with smaller bandgaps for improved performance. SiGe is one possible material system that could be used to fabricate enhanced BTBT transistors. The development of process for obtaining SiGe-on-insulator from bulk Si substrates through Rapid Melt Growth (RMG) will be presented. RMG is a technique that has been used to recrystallize materials on Si substrates. RMG, however, has not previously been applied to SiGe, a binary alloy with large separation in the liquidus-solidus curve its phase diagram.
I will present the experimental results, and explain and model the compositional profiles obtained during RMG of SiGe. The success of RMG SiGe suggests that the RMG technique can also be applied to III-V ternary and quaternary compounds with similar pseudo-binary phase diagrams, opening up a wide range of material possibilities with the potential for novel applications in heterogeneous integration and 3-D device technology.
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