Re: Regarding metal etching.

on the opposite end of the spectrum from altamash, i would say that getting a tool incompatible above 4" means you will not be able to handle any expansion to larger substrates.  bringing in a new tool that cannot move upward seems short-sighted.

to the metals to be etched i'd like to add:
W and Ru

all the other specs look fine.  if a vendor wants to present on campus about their metal RIE capabilities i would like to know and have a chance to see hear their pitch.

thank you for your efforts on getting the info together.
j

On Wed, Mar 30, 2011 at 6:58 PM, Altamash Janjua <altamash@snf.stanford.edu> wrote:

I think the ability to use the system for pieces would be critical for many of us.

Thanks,

Altamash

On Wed, Mar 30, 2011 at 2:31 PM, Anu Chandran <chandran@stanford.edu> wrote:

Hi All,

This is a question for all who are/will be interested in metal etching. We are in the process of nailing down the specs for a new inductively coupled plasma metal etcher for SNF.  I would like to solicit input from lab members as to what would be critical for them. 

In the wish list we already have the following:

Metals to be etched : 

 Au,Ag,Pt, Ti, Cr, Ni, Al

Wafer Size:

4" to pieces

Etch depth:

up to 400nm

Uniformity:

5%  over wafer

Roughness:

Shooting for <5nm rms. Seems like it varies a lot with metals and chemistry vs sputter etc.

Profile:

>85 deg

Selectivity:

Depends on chemistry and metal. Quite a range 

Please go ahead and add whatever you feel is important so that we can try to include it in the new system.

Thanks a lot,

Regards

Anu

--
Anu Chandran
Materials Science & Engineering
476 Lomita Mall,McCullough Building
Stanford CA 94305-4045
T:6507236466 Lab
T:6507234874 Office
F:6507249851

--
Altamash Janjua,

PhD Candidate, Harris Group,
Stanford University.