We are in the process of putting together a set of requirements for a new inductively coupled plasma dielectric RIE tool for the SNF. We would like to have as much input as possible from the lab member community on the needs currently not met by existing SNF tools. Current specs already gathered:
Materials to etch:
- Silicon Dioxide
- Quartz (Fused Quartz and Fused Silica)
Wafer size: 4”
Feature sizes:
- Etch Depth: >100μm
- Aspect Ratio: <10:1
Profile requirements:
- >85 deg
If you have any other specs (e.g materials, uniformity, roughness, selectivity, etc.) that would like to see covered
in this tool please email them to me.
Regards,
Jose
--
Jose I. Padovani
Graduate Student
Electrical Engineering Department
Stanford University
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