copper plating

Hello Labmembers,

Have any of you had experience with plating ~30 microns of Cu  (or Au or Cr or Al) on a substrate?

I am looking for flexible sheets of about 30 microns cu on both sides.

1.       I have a flexible plastic sheet (can sustain ~130C), can I send it somewhere for electroplating

2.      Can I try electroless plating myself in lab or send it out somewhere? Electroless plating  of cu would use palladium (Pd) or tin (Sn) are common seed layer materials (which I can deposit in innotec).  Pd and Sn alloys are created by dipping in SnCl2 or PdCl2 solutions => autocatalytic reaction of metal ions from the solutions occurs. initial copper nucleation on Pd is believed to occur because of the catalysis of the dissociation of formaldehyde

 

thank you

 

Regards,

Sonny

---------------

"What makes the desert beautiful," said the Little Prince ,"is that somewhere it hides a well ."

    _.--.  _

   ;,-   `' (            ,,,

  (  E#=====#############=: ]

   :_"'  ,._(         ```

     `--'         rock on    

Sonny Vo

Ph.d candidate

Department of Applied Physics, Stanford University

(626) 216-4597

Harris Research Group: http://snow.stanford.edu/index.html

 

FW:Arash Hazeghi's PhD Orals

STANFORD UNIVERSITY ORAL DEFENSE – DEPARTMENT OF ELECTRICAL ENGINEERING

 

Speaker: Arash Hazeghi

Advisor:   Prof. H.-S. Philip Wong

Date:   Friday, Nov. 5^th

Time:   3:00PM (Revetments served at 2:45PM)

Location: CIS-X Auditorium

 

Title: CARBON NANOTUBE ELECTRONICS

 

Abstract:

 

For more than four decades, Moore’s law has been the driving force of the semiconductor industry. Thanks to the continuous scaling of Silicon CMOS, rapid development of faster, smaller and cheaper electronics has been realized extending the boundaries of science and technology. However, as scaling continues into the new decade and beyond 20nm, short-channel effects, parasitics, power dissipation, lithography limitations and process variation limit the performance of Silicon CMOS. In order to overcome these challenges new types of semiconductor material and technology are needed.

 

With a diameter of no more than a few nanometers, Carbon Nanotubes (CNT) have unique electronic and structural properties that makes them ideal candidates for high performance digital logic applications. Recent innovations in high-density horizontally-aligned CNT synthesis and transfer process have enabled us to fabricate large-scale logic circuits with robust functionality, solely based on CNT Field Effect Transistors (CNFETs).

 

In this work we first investigate one of the major performance-limiting factors of the aligned CNT-based devices, the electrical contact resistance between CNT and metal contact, and propose a solution to reduce this resistance. We also provide a physics-based model for simulation, analysis and design of CNFET devices operating in ballistic as well as low-field semi-classical transport regimes. Finally, since measurement of carrier density is an integral part of understanding these devices, a new Integrated Capacitance Bridge (ICB) device is also provided for high-resolution wide-temperature range measurements of quantum capacitance in nano-structures.

 

 

 

 

----------------------------------------------------------------------------------

Arash Hazeghi

 

PhD Candidate

Stanford Center for Integrated Systems

CIS-X 300, 420 Via Palou Mall,

Stanford, CA 94305

 

phone: +1-650-725-0418

web: http://www.stanford.edu/~ahazeghi

 

TiO2 etching

Dear All,

Good afternoon!

Does anyone have experience in etching TiO2 (wet etching) ? Could you let me know about the solution you choose and the approximate etching rate?

Thanks a lot !

Sincererly yours,

Liangliang Zhang
------------------------------------------------------------ 

Ph.D. Candidate
School of Electrical Engineering
Stanford University
CA 94305, U.S.

Tel: 01-609-528-4962

M.S.

Institute of Microelectronics,
Peking University

Re: Comment p5000etch SNF 2010-10-25 16:51:16: handling errors

Adjusted the chamber door opening speed. Also adjusted the robot extension speed. Cycled 16 wafers with no handling problems.

Re: Problem p5000etch SNF 2010-10-28 14:29:24: Ch.C is Shutdown

Adjusted the chamber door opening speed. Also adjusted the robot extension speed. Cycled 16 wafers with no handling problems.

Microfluidic fab experience with FOTURAN - photosensitive glass by Schott

SNF members,

 

Does anyone have experience using FOTURAN glass by Schott for microfluidic fabrication? A phase change after UV exposure and baking modifies the HF etch rate by ~10x to enable self masking. http://www.invenios.com/foturan-photo-sensitive-glass.html  Does it work as advertized?

 

Thanks,

Matt

 

Matthew B. Kerby Ph.D., P.E.

Stanford University Bioengineering

318 Campus Drive West

Clark Center, Room W156
Stanford, CA 94305-5437

 

O 650-721-5647

C 650-315-4005

F 650-724-5791

 

Problem p5000etch SNF 2010-10-28 14:29:24: Ch.C is Shutdown

The chamber door is intermittently slow to open. Shutting down the chamber.

Re: Shutdown p5000etch SNF 2010-10-28 10:30:10: Wafer stuck in chamber C

Recovered wafer from Ch.C. The chamber door is intermittently slow to open. Shutting down the chamber.

Shutdown p5000etch SNF 2010-10-28 10:30:10: Wafer stuck in chamber C

Nanosociety Meeting TOMORROW Friday @ 12:00 pm, McCullough 115: Enhanced Light Emission and Detection with Plasmonic Antennas

Tomorrow at 12 pm, Edward Barnard, a member of the Brongersma group, will be presenting his latest research on plasmonic antennas in McCullough 115.

FREE PIZZA will be served at 11:55 am.

Enhanced Light Emission and Detection with Plasmonic Antennas

Edward Barnard

Department of Materials Science and Engineering

Member of the Brongersma Group

 

Antennas are used in all parts of the electromagnetic spectrum -- from large-scale, low-frequency radio telescopes down to miniature WiFi antennas running at GHz frequencies -- to concentrate wave energy into electronic circuits. These same principles can be applied to make nanoscale antennas that act as "receivers" and "transmitters" for visible light. At optical frequencies these antennas support standing surface plasmon-polariton waves that enable substantial concentration of light at a set of well-defined resonant frequencies. Using full-field electromagnetic simulations and analytical optical antenna models, we are able to derive simple design rules to achieve antennas with a desired set of optical properties (field enhancement, scattering cross section, absorption cross section, and resonant frequency) based on their geometric properties. With these design rules, we have constructed resonance maps that allow a designer to choose an antenna structure that provides desired resonant properties for a specific application. We then apply these design rules to create antennas that resonantly enhance absorption on thin silicon detectors as well as enhance emission of cathodoluminescence (CL). Through spatial and spectral mapping of both photocurrent and CL we clearly show the fundamental and higher-order resonant modes of these antennas. In addition to these specific demonstrated applications, these results enable optical engineers to more easily design a myriad of plasmonic devices that employ optical antenna structures, including nanoscale photodetectors, light sources, sensors, and modulators.

EE PhD Oral Examination - Roozbeh Parsa, Friday, October 29, 2010; 8:30 am

Stanford University Oral Defense - Department of Electrical Engineering

Speaker: Roozbeh Parsa
Advisor: Prof. Roger T. Howe
Date: Friday, October 29th
Time: 8:30am (refreshments at 8:15am)
Location: Paul Allen Building, Cypress Auditorium (formerly CISX-101)

NANOELECTROMECHANICAL RELAYS FOR LOW-POWER APPLICATIONS

Abstract:

CMOS scaling has been very successful in generating small, fast, low cost electronics. However, in
advanced CMOS nodes, the total power consumption is dominated by the static power dissipation,
which is caused greatly by gate leakage, short channel effects, and finite subthreshold slope. Further scaling of CMOS only exacerbates these problems.

Nanoelectromechanical (NEM) relays are promising devices for assisting CMOS systems by reducing the static power dissipation due to their zero leakage current, infinite subthreshold slope, and scalable actuation voltage. Electrostatically-actuated NEM relays are devices where the operation is based on the deformation of a flexible beam under the influence of electrostatic force in order to create a conducting path between two electrodes.

This work studies the fabrication process development of sidewall-coated laterally-actuated NEM relays. The developed process enables decoupling of the mechanical and electrical properties of the relay, allowing independent optimization of each property and paving the path for creating a back-end-of-line (BEOL) compatible process. Furthermore, a major failure mechanism of NEM relays is beam-to-gate shorting after actuation. To ameliorate this problem, new designs with improved mechanical properties were simulated and tested. These designs utilize a stiff electrode and a compliant beam to eliminate undesired beam deformation near the gate electrode. These results in addition to variation studies, stress outcomes, and basic logic functionality of the NEM relays will be presented.

Venture Clinic, Today at 4 in Allen 101 Conference room

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Re: Shutdown p5000etch SNF 2010-10-26 11:42:14: wafers inside, system shut down

Reboot system and recovered wafer from chamber B.
Loaded wafer on manual mode and checked backside
he leak and its at .7sccm.

Shutdown p5000etch SNF 2010-10-26 11:42:14: wafers inside, system shut down

using chamber B, but He leak is too high.
Try to manually remove the wafers, but blade can't sense the wafer at chamber B.
System crash when I try to manually remove the wafer again.

Comment p5000etch SNF 2010-10-25 16:51:16: handling errors

errors when taking wafers from fork into Ch.A. If you ignore all errors, it runs fine.

Question on Pd Wet Etching

Dear labmembers,

 

I've found that Pd dissolves in HCl:HNO3 (3:1) in hot. Anybody knows about more detail on this, for example exact temperature and etch rate?

 

Thanks

 

Kyunghoae

 

===========================================================

Kyung-Hoae Koo

PhD candidate

Stanford University

EE department

Comment p5000etch SNF 2010-10-24 17:46:22: Cl2 MFC alarm in Ch. A

Alarmed for Cl2 MFC fault on 4 out of 9 wafers. Error occured in BT & ME - Cl2 flow = 10 sccm in BT and 40 sccm in ME. After celaring alarm wafers ran okay. Need to check Cl2 MFC.

Special Seminar: James Schuck (Molecular Foundry) Oct 28

Please join the Stanford Optical Society for the following seminar presented by Dr. James Schuck (Moerner Lab alum) of the Molecular Foundry this Thursday Oct 28 at 4:15pm (refreshments at 4pm).

Dr. James Schuck
Lawrence Berkeley National Laboratory
Thursday, Oct. 28th, 4:15 PM, Hewlett 102. Refreshments at 4:00

High spatial resolution optical investigations of nanostructures and nanomaterials


In this talk, I will begin by introducing the Molecular Foundry, a National Nanoscience Research Center, and discuss the optics-related capabilities and research currently taking place there. I will then describe some of my group's recent work, in which we demonstrate the non-perturbative use of diffraction-limited nonlinear optics and photon localization microscopy to visualize the nanometer-scale controlled shifts of ultraconfined zeptoliter mode volumes within plasmonic nanostructures. Unlike tip-based or coating-based methods, these measurements do not affect the electromagnetic properties of the nanostructure being investigated. The photon-limited localization accuracy of nanoscale mode distributions is determined for many of the measured devices to be within a 95% confidence interval of +/- 2.5 nm. In addition, because of the accuracy of these photon localization microscopy measurements, we were able to observe and characterize the effects of nm-scale fabrication variations and irregularities on local plasmonic mode distributions.
As a proof of concept, we image the local energy-dependent changes in near-field distributions within individual gold asymmetric bowtie nano-colorsorters (ABnCs) [1], a class of plasmonic color sorters, based on the "cross" nanoantenna geometry. These devices are specifically engineered to not only capture and confine optical fields, but also to spectrally filter and steer them while maintaining nanoscale field distributions. Their spectral properties and localized spatial mode distributions can be readily tuned by controlled asymmetry, and each of the zeptoliter mode volumes within an ABnC, separated by only tens of nm, can be individually addressed simply by adjusting the incident wavelength. We imaged relative spatial shifts down to 7 nm of distinct modes within the same device, demonstrating the local field manipulation capabilities of ABnCs, in strong agreement with theoretical calculations.
Finally, I will finish with a brief discussion of our efforts in developing novel near-field optical probes and their use in hyperspectral nano-imaging.

Jim Schuck is currently a Staff Scientist at the Molecular Foundry located at Lawrence Berkeley National Laboratories. He earned his B.A. in Physics at UC Berkeley, and his Ph.D. in Applied Physics with Prof. Robert Grober at Yale University. After obtaining his Ph.D., he then spent three years as a postdoctoral researcher at Stanford University, where he was advised by Prof. W. E. Moerner studying optical nanoantennas and single-molecule spectroscopy. His research currently focuses on nano-photonic/plasmonic device applications and nanoscale optical imaging spectroscopy of novel materials.

--++**==--++**==--++**==--++**==--++**==--++**==--++**==
studentOSA mailing list
studentOSA@lists.stanford.edu
https://mailman.stanford.edu/mailman/listinfo/studentosa

EE PhD Oral Examination - Roozbeh Parsa, Friday, October 29, 2010; 8:30 am

Stanford University Oral Defense - Department of Electrical Engineering

Speaker: Roozbeh Parsa
Advisor: Prof. Roger T. Howe
Date: Friday, October 29th
Time: 8:30am (refreshments at 8:15am)
Location: Paul Allen Building, Cypress Auditorium (formerly CISX-101)

NANOELECTROMECHANICAL RELAYS FOR LOW-POWER APPLICATIONS

Abstract:

CMOS scaling has been very successful in generating small, fast, low cost electronics. However, in
advanced CMOS nodes, the total power consumption is dominated by the static power dissipation,
which is caused greatly by gate leakage, short channel effects, and finite subthreshold slope. Further scaling of CMOS only exacerbates these problems.

Nanoelectromechanical (NEM) relays are promising devices for assisting CMOS systems by reducing the static power dissipation due to their zero leakage current, infinite subthreshold slope, and scalable actuation voltage. Electrostatically-actuated NEM relays are devices where the operation is based on the deformation of a flexible beam under the influence of electrostatic force in order to create a conducting path between two electrodes.

This work studies the fabrication process development of sidewall-coated laterally-actuated NEM relays. The developed process enables decoupling of the mechanical and electrical properties of the relay, allowing independent optimization of each property and paving the path for creating a back-end-of-line (BEOL) compatible process. Furthermore, a major failure mechanism of NEM relays is beam-to-gate shorting after actuation. To ameliorate this problem, new designs with improved mechanical properties were simulated and tested. These designs utilize a stiff electrode and a compliant beam to eliminate undesired beam deformation near the gate electrode. These results in addition to variation studies, stress outcomes, and basic logic functionality of the NEM relays will be presented.

Comment p5000etch SNF 2010-10-22 07:59:02: previous user left door open

Cell Phone found in the Gowning Room

Dear Lab Members,

 

If you have mis-placed your cell phone today, please come by and see if the one I’m holding on to is yours.  I am in cubicle # 41.

 

Maureen

 

 

 

Maureen Baran

Stanford Nanofabrication Facility

Lab Services Administrator

mbaran@stanford.edu

650-725-3664

 

Venture Clinic, 4 pm Tuesday, 10/26

Dear Labmembers:

By popular demand, Shahin Farschi of Lux Capital, will be hosting
another Venture Clinic on Tuesday, Oct. 26 at 4 pm in Allen 101.
Learn about the current conditions in the venture world or discuss
your startup ideas with an experienced venturist. Shahin may also
be contacted directly:

Shahin Farshchi, Ph.D.
Senior Associate
Lux Capital Management, LLC
C: 925.323.2784
http://www.luxcapital.com

Need advice for using underlayer of 3612 photoresist to prevent sidewalls

Hi lab,

Does anyone have experience depositing a preliminary layer of 3612 photoresist and overexposing it at the beginning of the photolithography process in order to prevent sidewalls during liftoff? The idea is to get an undercut around the exposed patterns during developing. I'd prefer to do this without LOL.

Thanks,
Phil Van Stockum

Re: Comment p5000etch SNF 2010-10-15 14:25:44: resist burn in Ch. B

Adjusted wafer position in the chamber. Increased wafer load extesion by 2 counts.

Re: Problem p5000etch SNF 2010-10-19 18:34:37: Ch B failed He leak check.

Adjusted wafer position in the chamber. Increased wafer load extesion by 2 counts.

Problem p5000etch SNF 2010-10-19 18:34:37: Ch B failed He leak check.

MSE PhD Defense, Szu-Lin Cheng, Wednesday Oct 20th 2010, 10:00am, CISX Auditorium (101X)

Stanford University PhD Dissertation Defense

 

PhD Candidate : Szu-Lin Cheng

 

Title : Germanium as an Infrared Optical Emitter for Monolithic Integration on Silicon

 

Research Advisor : Prof. Yoshio Nishi

 

Date : Wednesday, Oct 20th, 2010

 

Time : 10 am (Refreshments served at 9:40 am)

 

Location : CISX Auditorium (101X)

http://cis.stanford.edu/misc/directions.html

 

A silicon (Si) compatible laser for applications in telecommunication and optical interconnect systems has been an interesting topic for several years now, but has yet to be practically demonstrated. The main problem is finding an appropriate lasing material at 1550 nm which can be monolithically integrated on silicon with conventional CMOS processes. Germanium (Ge) is compatible with Si and has a direct band gap of 0.8 eV, corresponding to the required optical communication wavelength of 1550 nm. The small difference of 0.134 eV between the direct and indirect band gaps of Ge suggests the possibility of a radiative direct band gap transition. Strategies to improve the luminescence properties of germanium have included large tensile strain, tin alloying, and electron band filling. In this talk, we focus on the last approach since the emission wavelength from such a method stays near the desired 1550 nm.

 

We first show how Ge direct band emission can be improved by using electron band filling of the conduction band. To achieve high electron band filling, an in-situ doping technique was applied during the growth of epitaxial Ge on Si. A strong enhancement from direct band photoluminescence (PL) was observed from highly-doped (1E19 cm^-3) n-type epi-Ge, demonstrating that electron band filling improves the direct band emission strength. We then successfully demonstrate room temperature direct band electroluminescence (EL) from Ge n+/p light emitting diodes (LED) on a Si substrate, which is a key step towards a CMOS-compatible laser. The contribution of electron band filling and the temperature dependence to the device efficiency will also be discussed. Additionally, we fabricate and optically characterize epitaxial Ge microdisks on Si. These mircodisk resonators are successfully coupled to fiber tapers and display clear whispering gallery modes (WGM) in transmission as well as photoluminescence. Finally, we combined the LED structure and the microdisk cavity to demonstrate an electrically-pumped Ge resonator diode. Both our optical and electrical resonators are currently limited by the Ge doping concentration, which prevents sufficient electron band filling to allow material gain or lasing. Possible solutions to this problem will also be discussed.

 

 

 

Fwd: EE PhD Oral Examination - Rostam Dinyari, Thursday, October 21, 2010; 3:45 pm

---------- Forwarded message ----------
From: Natasha Newson <nnewson@stanford.edu>
Date: Tue, Oct 19, 2010 at 1:37 PM
Subject: EE PhD Oral Examination - Rostam Dinyari, Thursday, October 21, 2010; 3:45 pm
To: ee-students@mailman.stanford.edu


STANFORD UNIVERSITY ORAL DEFENSE - DEPARTMENT OF ELECTRICAL ENGINEERING

TITLE: A CURVABLE SILICON RETINAL IMPLANT

Student:  Rostam Dinyari
Adviser:   Peter Peumans

Date:       Thu, Oct 21, 2010
Time:       3:45 PM (Refreshments served at 3:30 PM)
Location: Allen-X 101 Auditorium

Abstract:

In age-related macular degeneration (AMD) and retinitis pigmentosa (RP), two leading causes of blindness, the photoreceptor layer of the retina is degenerated while the other layers remain functional. The function of photoreceptors is very similar to that of solar cells. Upon receiving the light, they stimulate the inner layers of retina electrically and chemically. These data are then processed and compressed by a complex circuit of retinal neurons - horizontal cells, biopolar cells, amacrine cells, and ganglion cells - and sent to the brain for recognition.

We have developed a monolithic silicon photovoltaic retinal implant that can replace the degenerated photoreceptor layer. The implant requires no electrical power or data connection. It consists of a two-dimensional network of miniature silicon solar cells that directly stimulate the retina when illuminated by a goggle-IR laser system. A MEMS process isolates adjacent pixels and makes the arrays curvable allowing them to conform to the shape of the retina and allow for transfer of nutrients to the remaining layers of retina. The MEMS technique also provides isolation between the bodies of the three series-connected subpixels that make up each pixel. A high spatial resolution, a large field of view, and absence of mechanical strain are all achieved as a result of this approach.


--
EE students mailing list
ee-students@lists.stanford.edu
https://mailman.stanford.edu/mailman/listinfo/ee-students

University PhD Dissertation Defense of John Liu

Department of Applied Physics

University PhD Dissertation Defense

Design and Implementation of Plasmonic Cavities in Thin Metallic Films

John Liu

Applied Physics PhD Candidate

Reseach Advisor: Professor Mark L. Brongersma

October 21, 2010 @ 10:00 A.M.

Allen Building (CIS-X) Room 101

 

 

ABSTRACT

Metals contain a sea of free electrons that are easily driven into collective oscillation by electromagnetic waves.  As a result, small metal objects can serve as antennas that strongly scatter light.  At the same time, extended metal surfaces have been shown to guide surface plasmons (photons bound to surface charge oscillations) that can confine light to deep sub-wavelength dimensions.  Patterned metallic films can combine both the scattering and guiding properties of metals to capture and concentrate light from free space into a photodetector or to control the emission of light from emitting media.

We first consider the wide range of functions that can be achieved in directing light emission with the help of smooth metallic films.  We then describe how light interacts with patterned metallic films and present a detailed study of the effect of a single metallic groove on the scattering and surface plasmon guiding processes.  This has lead to our discovery of new, exciting opportunities for dense optical functionality with non-periodically patterned metallic films.  We show that a micronscale structure consisting of just two grooves in a metal film can lead to directional light coupling and wavelength splitting with a contrast ratio of 3:1.  Our understanding is then generalized giving rise to a fast, simplified optimization of large non-periodic structures for a desired function.  Lastly we consider the efficiency and bandwidth limits of coupling light through sub-wavelength slits for photodetection.  We outline a path to efficient, spectrally selective detection which may find application in compact, polarization sensitive, multi-wavelength plasmonic detectors.

Process Clinic today, 2 pm

Dear Labmembers --

There will be a Process Clinic today, Monday, Oct. 18, from 2-3 pm in the cubicle
area outside Maureen's office. Bring device sketches, process questions/runsheets, and
mask layouts. Staff and experienced labmembers will be on hand to help brainstorm solutions.

Your SNF staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Comment p5000etch SNF 2010-10-15 14:25:44: resist burn in Ch. B

Not sure if this is a problem with the resist not being fully baked out or if there's a problem with the P5000.
Resist: SPR-220 4um
Baked: 60min 110C oven + 140min 90C
Recipe: Ch. B Jim-Ox
Etch time: 580sec
Bias around -380V
He leakback < 1sccm
Power 500W with <1W reflected
Gas flows normal
Results:
Resist starts to burn around the edges after 1min. After 580sec etch, the outer 10mm of the wafer edges have burnt resist.

Re: Comment p5000etch SNF 2010-10-14 17:36:05: Ch.A clear

cleared

Re: Problem p5000etch SNF 2010-10-15 03:44:40: Ch.B turbo slow

Another user restarted the turbo and placed the chamber online. Ran 4 wafers with no problems.

Problem p5000etch SNF 2010-10-15 03:44:40: Ch.B turbo slow

cannot process in Ch.B, turbo slow/off in chamber monitor, turbo controller is red and blinky, not gonna win a drag race with this turbo

Re: Problem p5000etch SNF 2010-10-14 17:09:31: Ch.A vacuum service offline

put back on line

Comment p5000etch SNF 2010-10-14 17:36:05: Ch.A clear

user error - chamber is fine

Problem p5000etch SNF 2010-10-14 17:09:31: Ch.A vacuum service offline

After etching about 10 wafers successfully in Ch.C, got ready to start etching wafers in Ch.A when I noticed that the chamber is offline for maintenance on the vacuum service page.
So Ch.B and C are fine but Ch.A vacuum service is offline for some reason.

Re: Shutdown p5000etch SNF 2010-10-14 12:14:48: wafer stuck in chamber c

Recovered wafer. Adjusted slit door speed. Cycled 4 wafers.

Shutdown p5000etch SNF 2010-10-14 12:14:48: wafer stuck in chamber c

wafer did not come out of the chamber after process

Friday Fab Disruption for tool move in

All,

There will be traffic in the Clean Room as we move in the new sputter
and ebeam system. The systems are scheduled to arrive mid-morning on
Friday, Oct. 15th. By the time they are off-loaded and uncrated, it
will be closer to the lunch hour when they move through the fab. The
systems will enter through the double doors facing shipping and
receiving, move past the AG4100, AG4108, past the P5000, making a
turn past the TEL and the Innotec to their final location near the LAM etcher.

Please be aware of the disruption and plan accordingly.

Regards,
SNF Staff

Nanosociety Meeting TOMORROW Friday @ 12:00 pm, McCullough 115: High Speed Water Sterilization using One Dimensional Nanomaterials

For the first nanosociety meeting of the new school year, Dr. David Schoen, a graduate of the Cui Group, will be presenting his latest research on high speed water sterilization at 12pm in McCullough 115.

FREE PIZZA will be served at 11:55 am.

High Speed Water Sterilization using One Dimensional Nanomaterials

David Schoen

Department of Materials Science and Engineering

Graduate of the Cui Group

 

The removal of bacteria and other organisms from water is an extremely important process, not only for drinking and sanitation, but also industrially as biofouling is a commonplace and serious problem. We here present a textile based multiscale device for the high speed electrical sterilization of water using silver nanowires, carbon nanotubes, and cotton.  This approach, which combines several materials spanning three very different lengthscales with simple dying based fabrication, makes a gravity fed device operating at 80,000 L/(hr*m²) which can inactivate >98% of bacteria with only several seconds of total incubation time.  This excellent performance is enabled by the use of an electrical mechanism rather than size exclusion to remove the bacteria, while the very high surface area of the device coupled with large electric field concentrations near the silver nanowire tips allows for effective bacterial inactivation.

Re: MSE PhD Defense, Szu-Lin Cheng, Wednesday Oct 20th 2010, 10:00am, CISX Auditorium (101X)

Good luck :)

----- Original Message -----
From: "Szu-Lin Cheng" <slcheng@stanford.edu>
To: "mse-students" <mse-students@lists.stanford.edu>, "ee-students" <ee-students@lists.stanford.edu>, "labmembers" <labmembers@snf.stanford.edu>
Sent: Wednesday, October 13, 2010 5:24:30 PM
Subject: MSE PhD Defense, Szu-Lin Cheng, Wednesday Oct 20th 2010, 10:00am, CISX Auditorium (101X)

Stanford University PhD Dissertation Defense

PhD Candidate : Szu-Lin Cheng

Title : Germanium as an Infrared Optical Emitter for Monolithic Integration on Silicon

Research Advisor : Prof. Yoshio Nishi

Date : Wednesday, Oct 20th, 2010

Time : 10 am (Refreshments served at 9:40 am)

Location : CISX Auditorium (101X)

http://cis.stanford.edu/misc/directions.html

A silicon (Si) compatible laser for applications in telecommunication and optical interconnect systems has been an interesting topic for several years now, but has yet to be practically demonstrated. The main problem is finding an appropriate lasing material at 1550 nm which can be monolithically integrated on silicon with conventional CMOS processes. Germanium (Ge) is compatible with Si and has a direct band gap of 0.8 eV, corresponding to the required optical communication wavelength of 1550 nm. The small difference of 0.134 eV between the direct and indirect band gaps of Ge suggests the possibility of a radiative direct band gap transition. Strategies to improve the luminescence properties of germanium have included large tensile strain, tin alloying, and electron band filling. In this talk, we focus on the last approach since the emission wavelength from such a method stays near the desired 1550 nm.

We first show how Ge direct band emission can be improved by using electron band filling of the conduction band. To achieve high electron band filling, an in-situ doping technique was applied during the growth of epitaxial Ge on Si. A strong enhancement from direct band photoluminescence (PL) was observed from highly-doped (1E19 cm -3 ) n-type epi-Ge, demonstrating that electron band filling improves the direct band emission strength. We then successfully demonstrate room temperature direct band electroluminescence (EL) from Ge n+/p light emitting diodes (LED) on a Si substrate, which is a key step towards a CMOS-compatible laser. The contribution of electron band filling and the temperature dependence to the device efficiency will also be discussed. Additionally, we fabricate and optically characterize epitaxial Ge microdisks on Si. These mircodisk resonators are successfully coupled to fiber tapers and display clear whispering gallery modes (WGM) in transmission as well as photoluminescence. Finally, we combined the LED structure and the microdisk cavity to demonstrate an electrically-pumped Ge resonator diode. Both our optical and electrical resonators are currently limited by the Ge doping concentration, which prevents sufficient electron band filling to allow material gain or lasing. Possible solutions to this problem will also be discussed.

MSE PhD Defense, Szu-Lin Cheng, Wednesday Oct 20th 2010, 10:00am, CISX Auditorium (101X)

Stanford University PhD Dissertation Defense

 

PhD Candidate : Szu-Lin Cheng

 

Title : Germanium as an Infrared Optical Emitter for Monolithic Integration on Silicon

 

Research Advisor : Prof. Yoshio Nishi

 

Date : Wednesday, Oct 20th, 2010

 

Time : 10 am (Refreshments served at 9:40 am)

 

Location : CISX Auditorium (101X)

http://cis.stanford.edu/misc/directions.html

 

A silicon (Si) compatible laser for applications in telecommunication and optical interconnect systems has been an interesting topic for several years now, but has yet to be practically demonstrated. The main problem is finding an appropriate lasing material at 1550 nm which can be monolithically integrated on silicon with conventional CMOS processes. Germanium (Ge) is compatible with Si and has a direct band gap of 0.8 eV, corresponding to the required optical communication wavelength of 1550 nm. The small difference of 0.134 eV between the direct and indirect band gaps of Ge suggests the possibility of a radiative direct band gap transition. Strategies to improve the luminescence properties of germanium have included large tensile strain, tin alloying, and electron band filling. In this talk, we focus on the last approach since the emission wavelength from such a method stays near the desired 1550 nm.

 

We first show how Ge direct band emission can be improved by using electron band filling of the conduction band. To achieve high electron band filling, an in-situ doping technique was applied during the growth of epitaxial Ge on Si. A strong enhancement from direct band photoluminescence (PL) was observed from highly-doped (1E19 cm^-3) n-type epi-Ge, demonstrating that electron band filling improves the direct band emission strength. We then successfully demonstrate room temperature direct band electroluminescence (EL) from Ge n+/p light emitting diodes (LED) on a Si substrate, which is a key step towards a CMOS-compatible laser. The contribution of electron band filling and the temperature dependence to the device efficiency will also be discussed. Additionally, we fabricate and optically characterize epitaxial Ge microdisks on Si. These mircodisk resonators are successfully coupled to fiber tapers and display clear whispering gallery modes (WGM) in transmission as well as photoluminescence. Finally, we combined the LED structure and the microdisk cavity to demonstrate an electrically-pumped Ge resonator diode. Both our optical and electrical resonators are currently limited by the Ge doping concentration, which prevents sufficient electron band filling to allow material gain or lasing. Possible solutions to this problem will also be discussed.

 

 

!!! Book lost at SNF

Hi all,

Did anyone find a book near the door of SNF?

Book name: quantum mechanics for scientists and engineers (see the attached picture)

If you see it, please contact 650-6817340, or just leave it to the office of SNF.

Thanks very much!

Sincerely yours,
Liangliang Zhang

Reminder: Carol Livermore seminar today at 4:15pm

All,

The ME395 seminar speaker today is Dr. Carol Livermore of the Department of Mechanical Engineering at MIT.  She is hosted by the Pruitt group.  The seminar will start at 4:15pm in building 300, room 300.

http://mc.stanford.edu/High_Power_and_High_Energy_Systems_at_Small_Scales

Hope to see you there!

Regards,

Beth

-- 

Beth Martin

Graduate Student, Mechanical Engineering

Pruitt Microsystems Laboratory

Stanford University

Re: Comment p5000etch SNF 2010-09-29 11:12:12: New monitor

Archived

Re: Comment p5000etch SNF 2010-09-30 07:57:39: Handling test

Archived

Re: Comment p5000etch SNF 2010-10-06 14:39:24: Ch C Slit valve timeout Intermittent problem

Adjusted the slit valve opening and closing speed. Cycled the valve for 2 hours with no problems.

Re: Sunglasses Found In the Gowning Room

What do they look like. I am always leaving my glasses there :)

Jasmine

On Thu, 7 Oct 2010, Maureen Baran wrote:

> Dear All,
>
>
>
> There has been a pair of sunglasses sitting in the gowning room for a couple
> of days now. If these are your sunglasses please come to my cubicle #41 to
> claim them.
>
>
>
> Maureen
>
>
>
> Maureen Baran
>
> Stanford Nanofabrication Facility
>
> Lab Services Administrator
>
> mbaran@stanford.edu
>
> 650-725-3664
>
>
>
>

Sunglasses Found In the Gowning Room

Dear All,

 

There has been a pair of sunglasses sitting in the gowning room for a couple of days now.  If these are your sunglasses please come to my cubicle #41 to claim them.

 

Maureen

 

Maureen Baran

Stanford Nanofabrication Facility

Lab Services Administrator

mbaran@stanford.edu

650-725-3664

 

Re: Comment p5000etch SNF 2010-09-30 14:01:27: MFC 8 deviation

Problem has not reoccured

LPCVD for metal

Hi Labmembers,
If anyone has any information on LPCVD for metals (where, cost etc), can you please email me back.
Thank you,

Srikant

Campus-wide Evacuation Drill, Thursday, Oct. 7

Dear labmembers:

You might have already heard or seen the posters throughout the building
announcing the campus-wide evacuation drill on Thursday, Oct. 7. The
purpose of the drill is to allow the university to test its emergency
notification services. The time of the drill will not be announced, but
expect it during business hours. There will be no audible alarms inside
the building, but if you are a member of the Stanford community and have
your contact info on file, you will receive a message from Stanford's
emergency notification system.

If you are working in the lab, listen for an announcement over the PA
system. When you reach a safe point in your work, you should stop what
you are doing and report to the gowning room where there will be an SNF
staff member. Once you are accounted for, you can return to your work
in the lab. We trust that this should have minimal disruption to your
work and ask for your cooperation in this exercise.

Thanks for your attention --

Your SNF Building Emergency Response Team
(aka SNF Staff)

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Re: removing PR after argon dry etching

Neil

Please see me during my office hours 9 - 10 AM Tuesday to Friday at
Allen 31.
I have successfully employed both Microchem Remover PG heated above 40
degrees C and Silicon Valley Chemical NMP based products to remove both
optical and PMMA resist after its has been cross linked thermally and
exposed to fluorine based gases during RIE. Your issue sounds like a
similar problem.

All the Best,

James Conway
Ebeam Lab
SNF.

On 9/28/2010 1:09 PM, Neil Dasgupta wrote:
> Hi labmembers,
>
> I am running into a wall with my new process. We are using 1.6 um of 3612 resist as an etch mask for dry etching in the MRC etcher. Our dry etch recipe is argon sputtering/etching for 10 minutes at 100 W. This causes hardening/texturing of the resist, which looks like craters in the SEM after the dry etch.
>
> The problem is that I have not been able to remove this PR after this hardening occurs. I have tried 10 minutes O2 plasma in drytek 1, followed by acetone sonication for 10 minutes, followed by another O2 descum, but the resist still remains. The samples have Al metal on them, so that I can not use piranha. They are also gold contaminated. I imagine this is a problem people have encountered before, so any advice, especially specific recipes would be greatly appreciated.
>
> Thanks,
> Neil Dasgupta

Comment p5000etch SNF 2010-10-06 14:39:24: Ch C Slit valve timeout Intermittent problem

Comment p5000etch SNF 2010-10-06 14:36:25: End point Ch. A

On 10/5 (yesterday), I ran 8 wafers trhough Ch. A using end point. The endpoint was achieved as per the trace but the step did not end at endpoint and continued to the maximum set time in the step. Is there a problem in the communication between end point computer to Chamber A?

EE412 Projects on the Lab wiki

Greetings labmembers --

EE412 has begun and 18 enthusiastic labmembers have just put together
their project proposals. You can see them on the Lab wiki at:
https://snf.stanford.edu/SNF/processes/ee412

The EE412 students will be clocking in a lot of lab time in the next 8
weeks. Please offer them your support and advice as they work to help
the lab. And if there are any lab concerns, please contact one of us
(the project mentors.)

Thanks for your attention --

Jim McVittie
J Provine
Jason Parker
Ed Myers
Mahnaz Mansourpour
Mary Tang

*EE412 is a team project-based class with the aim to develop,
characterize and document processes that will be of value to the SNF lab
community. The instructors are Profs. Howe, Solgaard, and Priutt.

Re: Problem p5000etch SNF 2010-09-30 17:54:24: chamber C

Adjusted the door speed. Ran 16 wafers through Ch.C with no problem.s