Re: Spin-on dopants

I emailed Aaron separately, but in case anyone else is interested before I have a chance to post this to the wiki, here are spreading resistance analysis profiles for 800C/35min and 850C/15min in tylan6. You can obtain very highly doped n-type silicon and use thermal oxide (500A-1000A thick) in order to mask the diffusion to selectively dope regions of your wafer, then remove the POCl3 and oxide with a quick HF dip afterwards.

- joey

On Mon, Mar 16, 2009 at 11:30 AM, Chris Kenney <kenney@slac.stanford.edu> wrote:

Hi Aaron,

Can you use the gaseous doping tubes: tylan5 and tylan6? Your
wafers must be CMOS-clean to use these tubes.

Chris

On Mon, 16 Mar 2009, Aaron Hryciw wrote:

Hello,

Does anyone have experience with phosphorus-containing spin-on dopants?  I
want to make an ohmic contact to n-type Si (P-doped, ~10^15 cm^-3), so I

would like to bring up my doping levels to >10?19 cm^-3 under my contacts.

I would greatly appreciate any advice you can give me regarding suppliers
and/or recipes that have produced good results at SNF.

Cheers!

? Aaron


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Dr. Aaron Hryciw
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Geballe Laboratory for Advanced Materials
Stanford University
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