Dry etch PECVD SiO2

Dear Labmembers,

I plan to etch SiO2 (grown with STS) on the top of Pt (innotec). The
recipe I learned is CHF3/O2 PECVD SiO2 etching on wiki. If I want to
etch ~130nm SiO2, is 1um 3612 enough to for mask? Will the PR become
too hard to strip using aceton after etching?

In addition, I found mrc and drytek4 can do SiO2 etch. Which one gives
the better/steeper profile?

Thanks

Henry