Seminar announcement: June 8, Dr. Benjamin Vincent, IMEC - Ge and GeSn RPCVD Growth for Advanced Logic Devices

Ge and GeSn Reduced Pressure Chemical Vapor Deposition for Advanced Logic Devices 
Dr. Benjamin Vincent, Senior Researcher, IMEC, Belgium

When : Friday, June 8th, 2012, 3pm
Where : CIS 338X, Paul G. Allen Building

In this presentation, an overview on the RPCVD work done for Ge integration in high mobility pMOSFET channel is first proposed. The different selective growth approaches will be detailed for both relaxed and strained Ge channels for either Planar or FinFET devices. Then, the Si cap passivation of Ge channels will be detailed. We identified that the different materials properties of the Si cap (depending on the growth conditions) strongly impact Ge pFET devices performances.
In the second part of the talk, GeSn growth is discussed in details. The challenges of GeSn growth is first explained.  The technique developed at imec is then described. With Ge2H6 and SnCl4 as Ge and Sn precursors, defect free fully strained GeSn alloys are grown on Ge substrates with Sn contents from 3 to 12%. Various materials characterizations of  those GeSn layers are shown. Then, different types of GeSn integration routes for advanced logic devices are discussed: GeSn capacitors, GeSn MOSFET channels and GeSn Source/Drain stressors for Ge pFET channels. Both the benefits and the potential issues of this GeSn materials implementation in logic devices will be detailed.

About the speaker:
Dr. Benjamin VINCENT is Senior Researcher at Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. IMEC is Europe's largest independent research center in nano-electronics and nano-technology. His current research interest is in the epitaxial growth of group IV materials (Silicon, SiGe, Germanium, GeSn) for advanced nano-electronics and photonics.

Benjamin VINCENT has worked from 2004 to 2008 on Germanium on Insulator substrates fabrication by the Ge condensation technique, during his Master Thesis at the Imperial College of London (2004-2005) and his PhD thesis in CEA/LETI in Grenoble (2005-2008). In October 2008, Benjamin VINCENT joined imec as researcher for Group IV semiconductor (Si, SiGe, Ge, GeSn) epitaxial growth by Reduced Pressure Chemical Vapor Deposition. He worked mainly on Ge on Si integration by selective epitaxy for high mobility channel MOS technology and advanced photodetector devices. He investigated in depth the passivation of Ge pFET channels with Si cap growth: he highlighted the materials properties (epitaxial quality, Ge segregation in Si cap) impact on Ge devices performances. In 2009, he started to investigate the growth of metastable GeSn alloys by CVD and demonstrated for the first time in 2011 a manufacturable technique to make this material using commercially available precursors. Since April 2011, Benjamin VINCENT is Senior Researcher and is in charge of RPCVD process developments for strained Ge planar and FinFET devices at imec.

Benjamin VINCENT authored or coauthored more than 30 papers, all of which were published in US or European journals or conferences. He gave three invited talks on his scientific work at the European MRS conference in 2008 and at the ISTDM conferences in 2010 and 2012. He has been granted of more than 8 US patents. He received the "Young Scientist Award" from the European Materials Research Society in 2008 and the "Best Ph.D. Thesis award of the Grenoble Institute of Technology" in 2008 as well.