Re: Pt and TiN etch qestions

If you wish to try this in PQuest at SNF, I strongly recommend (= insist) that you use 5 mTorr pressure.  10 and above result in a "hard to see" instability that forms a fireball up at the microwave window which has no cooling. 

Higher RF  (100 w?) will etch faster, please record the DC bias.

Please publish any results.

jim

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From: "zhangll.ime@gmail.com" <zhangll.ime@gmail.com>
To: Henry Hong-Yu Chen <hongyuc@stanford.edu>
Cc: "labmembers@snf.stanford.edu" <labmembers@snf.stanford.edu>
Sent: Friday, May 4, 2012 1:19 PM
Subject: Re: Pt and TiN etch qestions

For Pt RIE etch:

Ar: 40sccm,
Cl2: 40sccm
Pressure: 10mTorr
RF pow 50W
ECR pow 700W
Rate:30nm/min

This recipe works at MIT, but i haven't got a chance to try it in out cleanroom.

Good luck!

Sincerely yours,
Liangliang

On May 4, 2012, at 2:57 PM, Henry Hong-Yu Chen <hongyuc@stanford.edu> wrote:

> Dear Lab Members,
>
> My colleague and I are trying to etch through the following structures
> by dryetch (P5000? PQUEST?). I wonder if anyone can share the
> experience/recipe with us.  Both structure are on the top of very
> thick SiO2.
>
> Top/Bottom => 50nm SiO2 (STS) / 30nm Pt (innotec)
> Top/Bottom => 50nm SiO2 (STS) / 80nm TiN (AJA)
>
> Thanks,
> Henry