EE PhD Oral Examination - Elizabeth Edwards Friday, Sept. 2, 1pm CISX-AUD

Stanford University PhD Oral Defense - Department of Electrical Engineering

Title: Silicon-Germanium Electroabsorption Modulators for CMOS-Compatible Photonic Integrated Chips

Speaker: Elizabeth Edwards
Advisor: David A. B. Miller
Date: Sept. 2, 2011 (Friday)
Time: 1 PM (Refreshments served at 12:45 PM)
Location: Paul Allen Auditorium (CISX-AUD)

Abstract:
One of the major challenges in the design of future integrated circuits is accommodating the increasing power consumption and bandwidth density of inter- and intra-chip communication links. Replacing wires with optical data links is a viable solution, provided device size and performance criteria are met. The quantum-confined Stark effect (QCSE) in Ge quantum wells (QWs) is a strong, efficient Si-based electro-optic mechanism for modulators operating in the communications band. Using the QCSE in Ge QWs, we have designed and demonstrated surface-normal asymmetric Fabry-Perot and microdisk resonator electroabsorption modulators. Leveraging advancements in SiGe epitaxy grown on silicon and metal contacting techniques, these devices are capable of high-speed, efficient modulation and compact form factors necessary for CMOS process integration.

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Elizabeth Edwards
PhD Candidate
Dept. of Electrical Engineering
Stanford University

Center for Nanoscale Science and Technology
348 Via Pueblo Mall, Stanford, CA 94305-4088
ehe@stanford.edu