This is a question for all who are/will be interested in metal etching. We are in the process of nailing down the specs for a new inductively coupled plasma metal etcher for SNF. I would like to solicit input from lab members as to what would be critical for them.
In the wish list we already have the following:
Metals to be etched :
Au,Ag,Pt, Ti, Cr, Ni, Al
Wafer Size:
4" to pieces
Etch depth:
up to 400nm
Uniformity:
5% over wafer
Roughness:
Shooting for <5nm rms. Seems like it varies a lot with metals and chemistry vs sputter etc.
Profile:
>85 deg
Selectivity:
Depends on chemistry and metal. Quite a range
Please go ahead and add whatever you feel is important so that we can try to include it in the new system.
Thanks a lot,
Regards
Anu
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Anu Chandran
Materials Science & Engineering
476 Lomita Mall,McCullough Building
Stanford CA 94305-4045
T:6507236466 Lab
T:6507234874 Office
F:6507249851
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