This is Seongjae at Prof. Harris group.
If anyone has answers for questions below, please let me know.
Answers for multiple questions are much better of course
but even if you have an answer for one question, that will be fine too.
The intend is to use Cr as the hard mask to etch multiple layers
and remove it by CR-14 minimizing the exposure of the lower layers
to CR-14 since the layers in my concern turned out to be also etched
by CR-14 significantly by SEM inspection.
1. Cr etch rate in drytek 4 at a usual oxide etch recipe.
2. Cr etch rate in pquest at a usual GaAs etch recipe.
3. Cr etch rate by CR-14 (wet etchant for Cr) as accurately as possible.
Thank you for your help in advance.
- Sincerely, Seongjae.
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