Latest Results and Applications using XeF2 etching.

Xactix, the manufacture of our XeF2 etch system will be on campus
Wed. Feb. 24th. If you have any interest in the latest developments
in XeF2 etching please join us.

Latest Research Results and Applications using XeF2 etching.
David Springer and Kyle Lebouitz, XACTIX, Inc.
Wednesday February 24, 10:00am to 12 noon:
Room: CIS101

This seminar will be divided into two parts. The first hour will be a
presentation by David Springer, President of XACTIX, Inc. on the latest
research results and examples of etching using XeF2 gas for multiple
applications. In the second hour we will be joined by Kyle Lebouitz, XACTIX's
CTO, for users to have a chance to discuss particular ideas, issues, problems
with their use of the XACTIX XeF2 etcher in the fab.

XeF2 etches Si, Ge, Mo and SiGe very selectively to most semiconductor
materials. For example selectivities of over 1000:1 can be archived to films
such as SiO2, and SiN with zero attack on almost all other materials
including
Al, PZT, AlN, photoresist, etc. XeF2 can also be used to etch transitional
metals such as W, Ti, Ta, TiN and TaN, or conditions can be set to preserve
these materials when etching silicon. Areas where XeF2 etching can
show benefit
include releasing MEMS, increasing die strength after dicing, removing barmier
layers for metal deposition, removing silicon for failure analysis, removing
silicon to expose the back of side of sensor circuits to enhance signal
strength as well as other non semiconductor applications which
require removing
transitional metals.

If you have any questions, please contact Ed Myers