Added a step to the VIA etch recipe before the final pump down step. It is a 10 sec, 150 Watt plasma, 250 mT with a 200 sccm Ar flow and 0 gauss on the electromagnet. The purpose of the step is to dissipate static that has built up on the clamp. Ran 20 wafers (200 sec etch) with no problems. I also reduced the final pump down time to 15 secs because I do not think its necessary to have such a long pump time.
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