Re: Potential issue with YES oven

Arash,

You will likely need to perform a more thorough cleaning than just stripping in acetone as I don't think you are obtaining a clean surface to prime to.

I would recommend Remover PG heated to between 40 and 60 C. with ultrasonic for 10 minutes,  then a second bath of heated Remover PG for 5 - 10 minutes with ultrasonic,
followed by 5 minutes in Acetone (No ultrasonic as it appears to often break the wafer in the U/S), followed by 5 minutes in Isopropanol with ultrasonic.  Finally a perfect NS blow off and then direct into the YES Prime Oven.

I used the prime oven yesterday and had normal results.

Best,

James Conway


Arash Hazeghi wrote:

Hi,

I was trying to spin Ma-N 2043 (negative eBeam resist) on my wafers (thermal SiO2), I used YES oven but the resist adhesion was very poor, literally all the resist came off during spinning (like putting water on a hydrophobic surface). The standard Ma-N 2043 recipe recommends HMDS step and I had successfully coated wafers with identical processing in the past with Ma-N 2043. Last night, I tried three times, each time striping the wafers in Acetone, and putting them in YES oven prior to spinning but it didn’t help. Nothing has changed in the processing of my wafers so I tend to believe there was something in the YES oven last night that caused poor adhesion. Has anyone else experienced any similar issues? Is there a solution?

 

Thanks,

Arash

 

 

 

----------------------------------------------------------------------------------

Arash Hazeghi

 

PhD Candidate

Stanford Center for Integrated Systems

CIS-X 300, 420 Via Palou Mall,

Stanford, CA 94305

 

phone: +1-650-725-0418

web: http://www.stanford.edu/~ahazeghi